Influence of compensation on the luminescence of nitrogen-doped ZnSe epilayers grown by MOVPE

Heitz, R.; Moll, E.; Kutzer, V.; Wiesmann, D.; Lummer, B.; Hoffmann, A.; Broser, I.; Bäume, P.; Taudt, W.; Söllner, J.; Heuken, M.

doi:10.1016/0022-0248(95)00817-9

Cited by 24 publications

(12 citation statements)

References 10 publications

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“…The maximum of this band is shifted to lower energies. This behavior is well known from high compensated ZnSe:N [3] and GaAs:Li [5]. For ZnSe:N the intensity behavior of the DAP can be explained in a dynamical model proposed by Shklovskii and Efros [6].…”

Section: Introductionmentioning

confidence: 92%

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Local vibrational modes and compensation effects in Mg‐doped GaN

Hoffmann

Kaschner

Thomsen

2003

phys. stat. sol. (c)

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The compensation and self-compensation effects in Mg-doped GaN is studied by low-temperature photoluminescence and Raman spectroscopy using a series of samples with different Mg concentrations. Strongly doped samples are found to be highly compensated in electrical measurement. The compensation mechanism is directly related to the incorporation of Mg leading to the additional formation of three different deep donor levels. Furthermore, hydrogen forms defect complexes with Mg and compensates the acceptor states. These complexes were observed as local vibrational modes in Raman spectra in the range of 2200 cm -1. The direct incorporation of Mg can be controlled by local vibrational modes in the region of GaN host phonons. Investigating the intensity dependence of the different Mg-H complexes and the LVM of activated Mg the Raman spectra give a clear direct evidence of the degree of compensation and pconductivity.

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Section: Introductionmentioning

confidence: 92%

“…After the breakthrough by Amano et al [1] using a low-energy electron beam treatment of their p-doped samples Nakamura et al [2] showed that hydrogen plays an active role in the compensation process This problem is very similar to the p-doping in II-VI-compound semiconductors with large band gap, like e.g. ZnSe:N [3].…”

Section: Introductionmentioning

confidence: 97%

Local vibrational modes and compensation effects in Mg‐doped GaN

Hoffmann

Kaschner

Thomsen

2003

phys. stat. sol. (c)

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“…by unintentional dopants and structural defects in p-doped GaN, 17,18 which still drastically limit today's device performance, have not been fully understood as in more matured systems such as ZnSe 19,20 or CdS. 2,3,21 Studying the luminescence traces of Mg doped GaN with different compensation, doping and strain levels 22,23 has been proven as an effective tool for improving the growth procedures themselves but has also raised general questions concerning the twofold occurrence and stability 24 of acceptors in such wide bandgap materials.…”

Section: Introductionmentioning

confidence: 99%

Optical signature of Mg-doped GaN: Transfer processes

et al. 2012

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Mg doping of high quality, metal organic chemical vapor deposition grown GaN films results in distinct traces in their photoluminescence and photoluminescence excitation spectra. We analyze GaN:Mg grown on sapphire substrates and identify two Mg related acceptor states, one additional acceptor state and three donor states which are involved in the donor acceptor pair band transitions situated at 3.26 eV -3.29 eV in GaN:Mg. The presented determination of the donor acceptor pair band excitation channels by photoluminescence excitation spectroscopy in conjunction with temperature dependent photoluminescence measurements results in a direct determination of the donor and acceptor binding, localization, and activation energies which is put into a broader context based on Haynes's rule. Furthermore, we analyze the biexponential decay dynamics of the photoluminescence signal of the acceptor and donor bound excitons. As all observed lifetimes scale with the localization energy of the donor and acceptor related bound excitons, defect and complex bound excitons can be excluded as their origin. Detailed analysis of the exciton transfer processes in the close energetic vicinity of the GaN bandedge reveals excitation via free and bound excitonic channels but also via an excited state as resolved for the deepest localized Mg related acceptor bound exciton. For the two Mg acceptor states we determine binding energies of 164±5 meV and 195±5 meV which is in good agreement with recent density functional theory results. This observation confirms and quantifies the general dual nature of acceptor states in GaN based on the presented analysis of the photoluminescence and photoluminescence excitation spectra.

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“…Therefore, at the highest densities the well-known structured DAP emission line shape as seen in samples with low compensation should be observed. This was indeed the case for compensated ZnSe : N [5].…”

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confidence: 72%

Bound Excitons in Wide-Gap II-VI and Nitride Semiconductors. Comparison of Optical Studies of Shallow Dopants in These Materials

Hoffmann

Kutzer

Göldner

1998

phys. stat. sol. (b)

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In this paper recent results of optical studies of bound excitons in wide-gap II±VI and nitride semiconductors are surveyed. In the first part latest results about self-compensation mechanisms will be presented. Then, the dynamical characteristics of excitonic transitions are evaluated for various impurities, dopants, and dopant concentrations, and for excitation via particular resonant excitation channels. Relaxation and conversion channels between excitonic systems are analyzed, especially in strained heteroepitaxial systems which show splitting effects of the bands from which the carriers stem. The dynamical behavior of excitons in wide-gap material gives evidence of nonradiative decay channels. Calorimetric spectroscopy at mK temperatures was used to investigate the nonradiative processes and to determine quantum efficiencies. Recent results of transient fourwave mixing experiments at bound-exciton complexes will be shown to demonstrate that shallow defects influence the dephasing in the investigated systems which gives information about the homogeneous and inhomogeneous broadening mechanisms. In the last part negatively charged excitons (trions) were observed in unintentionally donor doped Zn 0.90 Mg 0.10 Se/ZnSe single quantum wells by magneto-luminescence experiments. The binding energy of the trion singlet ground state is about 2.7 meV.Introduction. For growth of semiconductor devices like laser diodes and transistors, a reproducible control of doping levels for shallow acceptors and donors in the range from 10 16 to 10 19 cm ± ±3 is the crucial prerequisite. Beside the electrical characterization, optical spectroscopy is an important probe to investigate the chemical nature of impurities, their concentration and the compensation effects involved. In wide-bandgap semiconductors like II±VI compounds and nitride based semiconductors, shallow dopands influence strongly the excitonic processes in the band edge regime. To distinguish doping effects from intrinsic properties like biexcitons or electron±hole plasmas, a detailed knowledge about the observed free and bound excitonic systems in the investigated crystal structure is mandatory. In this paper recent results obtained using photoluminescence (PL), resonant excitation spectroscopy, magneto-optics, and time-resolved analysis are surveyed.

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Influence of compensation on the luminescence of nitrogen-doped ZnSe epilayers grown by MOVPE

Cited by 24 publications

References 10 publications

Local vibrational modes and compensation effects in Mg‐doped GaN

Local vibrational modes and compensation effects in Mg‐doped GaN

Optical signature of Mg-doped GaN: Transfer processes

Bound Excitons in Wide-Gap II-VI and Nitride Semiconductors. Comparison of Optical Studies of Shallow Dopants in These Materials

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