Influence of complex impurity centres on radiation damage in wide-gap metal oxides

Lushchik, A.; Lushchik, Ch.; Попов, А. И.; Schwartz, K.; Shablonin, E.; Vasil’chenko, E.

doi:10.1016/j.nimb.2015.07.004

Cited by 45 publications

(19 citation statements)

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“…(This is the case in the present paper.) All the above mentioned processes strongly depend on the type of material, the structure of the crystal lattice, and the efficiency of the corresponding defect formation process [21][22][23]. Detailed understanding of the radiation damage mechanisms and kinetics is important for improving materials radiation properties.…”

Section: Introductionmentioning

confidence: 99%

“…The situation is more or less well understood in simple NaCl-type structures, of which the alkali-halide crystals and simple oxides (MgO) are representatives [21][22][23][24][25][26][27][28][29][30], however in the case of more complex structures, such as fluorides, spinels and rutiles the current level of understanding is still far from the completed [23,[30][31][32][33]. In many ways, this is due to the lack of sufficient experimental data, which, in turn, is related to a low efficiency of defect formation and a sufficiently high thermal stability of the radiation defects.…”

Section: Introductionmentioning

confidence: 99%

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Kinetics of dimer F type center annealing in MgF2 crystals

Kuzovkov

Kotomin

Попов

2018

Nuclear Instruments and Methods in Physics Research Section B:

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Kinetics of dimer F type center annealing in MgF2 crystals

Kuzovkov

Kotomin

Попов

2018

Nuclear Instruments and Methods in Physics Research Section B:

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“…So, the FranckHertz effect was considered as some kind of "luminescent protection" against the radiation damage induced by hot e-h recombination. 12,14,15,36,37 However, several limitations do not allow to use this approach for significant increase of material radiation resistance. 15 In NaCl at room temperature, the value of E FD is close to E g .…”

Section: Resultsmentioning

confidence: 99%

Low-temperature creation of Frenkel defects via hot electron-hole recombination in highly pure NaCl single crystals

Lushchik

Nagirnyi

et al. 2016

Low Temperature Physics

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The creation spectrum of stable F centres (being part of F-H pairs of Frenkel defects) by synchrotron radiation of 7-40 eV has been measured for highly pure NaCl single crystals at 12 K using a highly sensitive luminescent method. It is shown that the efficiency of F centre creation in a closely packed NaCl is low at the decay of anion or cation excitons (7.8-8.4 and 33.4 eV, respectively) or at the recombination of relaxed conduction electrons and valence holes. Only the recombination of nonrelaxed (hot) electrons with holes provides the energy exceeding threshold value E FD , which is sufficient for the creation of Frenkel defects at low temperature. Published by AIP Publishing.

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“…To date, to increase the efficiency of GenIV generation reactors, it has been proposed to use higher temperatures than in WWR and WWER reactors, which reach 500-700 • C. Such temperatures make it almost impossible to use standard materials to create the first walls and protective circuits of the reactor, and requires new technical solutions and new structural materials [4,5]. In this regard, in recent decades, great attention has been paid to basic research in the field of obtaining new structural materials, as well as comprehensive study of their resistance to radiation and mechanical damage, changes in thermal conductivity, and performance at high radiation doses [6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Dynamics of Radiation Damage in AlN Ceramics under High-Dose Irradiation, Typical for the Processes of Swelling and Hydrogenation

et al. 2020

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The use of nitride ceramics, in particular AlN, as structural materials for nuclear power is primarily limited by their resistance to swelling and hydrogenation processes due to the accumulation of poorly soluble helium and hydrogen ions in the structure of the surface layer. In this regard, research in this area is of great importance not only from a fundamental point of view, but also practical, since any new data on radiation resistance can make a great contribution to the development of the theory of resistance to radiation influences of structural materials of a new generation. This work is devoted to a systematic study and comparative analysis of the dynamics of radiation damage during high-dose irradiation with protons and helium ions in nitride ceramics, which have great potential for use as structural materials for GenIV reactors. The choice of irradiation doses of 1 × 1017–5 × 1017 ion/cm2 is due to the possibility of modeling the processes of radiation damage characteristic of displacements of 10–50 dpa. During the study, the dependences of the change in the dielectric and conductive characteristics of nitride ceramics depending on the radiation dose, as well as on the type of ions, were established. The kinetics of degradation and accelerated aging was determined depending on the type of exposure. The mechanical and strength properties of ceramics were determined.

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Influence of complex impurity centres on radiation damage in wide-gap metal oxides

Cited by 45 publications

References 50 publications

Kinetics of dimer F type center annealing in MgF2 crystals

Kinetics of dimer F type center annealing in MgF2 crystals

Low-temperature creation of Frenkel defects via hot electron-hole recombination in highly pure NaCl single crystals

Dynamics of Radiation Damage in AlN Ceramics under High-Dose Irradiation, Typical for the Processes of Swelling and Hydrogenation

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