Influence of composition and structure on the mechanical properties of BCN coatings deposited by thermal CVD

Stöckel, S.; Weise, K.; Dietrich, D.; Thamm, Thomas; Braun, Marek; Cremer, R.; Neuschütz, D.; Marx, G.

doi:10.1016/s0040-6090(02)00816-7

Cited by 21 publications

(13 citation statements)

References 10 publications

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“…The isothermal chemical vapour deposition process (TCVD) of BCN was carried out on silicon substrates in a vertical hot wall reactor at 950°C under atmospheric pressure [3,4,5]. As reaction gas, a mixture of trimethylborazine (TMB; C 3 H 12 B 3 N 3 ), toluene (C 7 H 8 ) and ammonia (NH 3 ) was used.…”

Section: Methodsmentioning

confidence: 99%

“…Nevertheless, the samples containing the most carbon do not have the most considerable differences between calculated and measured values, but the samples containing moderate amounts in the range of approximately 20-45 at % carbon for TCVD [5] and 15-30 at % for PECVD (Fig. 8).…”

Section: Phase Analysis Microstructure and Microhardnessmentioning

confidence: 95%

“…The line BN-C corresponds to the existence of BN and C simultaneously. The composition of TCVD films are always located between the lines BN-C and BN-BC near by the line BN-BC 5 , which means that carbon is partially incorporated into the BN structure instead of nitrogen. Moreover, an elementary carbon phase must exist.…”

Section: Chemical Compositionmentioning

confidence: 99%

“…In the case of TCVD the increasing carbon content correlates with the out-of-plane vibration and indicates that carbon is incorporated be- tween the BN planes, increases the lattice distance and thereby decreases the energy of the deformation vibration [5]. However, in the case of PECVD the stronger and continuous influence on the in-plane vibration leads one to assume that carbon is especially incorporated in the BN planes (according to stoichiometric considerations probably on boron places) and in this way changes the bond angle and strength.…”

Section: Phase Analysis Microstructure and Microhardnessmentioning

confidence: 99%

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Comparative investigations of structure and properties of BCN coatings deposited by thermal and plasma-enhanced CVD

et al. 2003

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Hard BCN films were deposited by chemical vapour deposition (CVD) on Si(100) substrates. TCVD (thermal activated) and PECVD (GD or RF microwave plasma-activated, respectively) were used. The films were analysed with respect to chemical state, composition, morphology and microstructure, oxidation behaviour and hardness. Wavelength dispersive X-ray spectroscopy (EPMA), infrared spectroscopy (IR), transmission electron microscopy (TEM), differential thermal analysis (DTA) and hardness evaluation were employed for film characterization. A correlation between deposition parameters and film composition, structure and hardness could be proved in every CVD process. Parallels between TCVD and PECVD films emerged in the case of chemical composition and the correlation between carbon content and hardness values. Considerable differences exist with regard to the microstructure, especially the texture of the films. Moreover in TCVD films the carbon is preferentially incorporated between the BN basal planes, whereas in PECVD films it is incorporated preferentially in as well as between the BN basal planes.

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Section: Methodsmentioning

confidence: 99%

Section: Phase Analysis Microstructure and Microhardnessmentioning

confidence: 95%

Section: Chemical Compositionmentioning

confidence: 99%

Section: Phase Analysis Microstructure and Microhardnessmentioning

confidence: 99%

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Comparative investigations of structure and properties of BCN coatings deposited by thermal and plasma-enhanced CVD

et al. 2003

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“…The boron content of the films ranged from 3at% to 42at%, the carbon content from 16at.% to 80at.%, and oxygen content from 2at.% to 10 at.%. BCN films with hexagonal turbostratic graphite like structure were deposited by both isothermal chemical vapour deposition (ITCVD) under atmospheric pressure and PECVD from gaseous mixtures of trimethylborazine, toluene and ammonia at 950°C (Stockel, 2002(Stockel, , 2003. Parallels between ITCVD and PECVD films emerged in the case of chemical composition and the correlation between carbon content and hardness values.…”

Section: Trimethylborazinementioning

confidence: 99%

Compilation on Synthesis, Characterization and Properties of Silicon and Boron Carbonitride Films

Hoffmann¹,

Файнер²,

Косинова³

et al. 2011

Silicon Carbide - Materials, Processing and Applications in Electronic Devices

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Speciation of BC x N y films grown by PECVD with trimethylborazine precursor

et al. 2009

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Films of BC(x)N(y) were produced in a plasma-enhanced chemical vapor deposition process using trimethylborazine as precursor and with H2, He, N2, and NH3, respectively, as auxiliary gas. These films deposited on Si(100) wafers or fused quartz glass substrates were characterized chemically by X-ray photoelectron spectroscopy and by synchrotron radiation-based total-reflection X-ray fluorescence combined with near-edge X-ray absorption fine structure. Independent of the auxiliary gas, the B-N bonds are dominating. Furthermore, B-C and N-C bonds were identified. Oxygen, present in the bulk (in contrast to the surface layer of some nanometers, where molecular oxygen and/or water are absorbed) as an impurity, is bonded to boron or to carbon, respectively. The relation of boron and nitrogen changes with the character of the auxiliary gas: cB/cN approximately = 4:3 (for H2 and He) and cB/cN approximately = 1 (for N2 or NH3). Furthermore, physical properties such as the refractive index and the optical band-gap energy were determined.

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Influence of composition and structure on the mechanical properties of BCN coatings deposited by thermal CVD

Cited by 21 publications

References 10 publications

Comparative investigations of structure and properties of BCN coatings deposited by thermal and plasma-enhanced CVD

Comparative investigations of structure and properties of BCN coatings deposited by thermal and plasma-enhanced CVD

Compilation on Synthesis, Characterization and Properties of Silicon and Boron Carbonitride Films

Speciation of BC x N y films grown by PECVD with trimethylborazine precursor

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