Influence of conduction via a channel of an impurity δ-layer on the magneto-quantum effects in AlGaAs/GaAs/AlGaAs heterostructures

Vainberg, V. V.; Pylypchuk, A. S.; Poroshin, V. N.; Sarbey, O. G.; Baidus, N. V.; Biryukov, A. A.

doi:10.1016/j.physe.2014.01.035

Cited by 5 publications

(1 citation statement)

References 17 publications

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“…In addition, the measurements of magnetoresistivity of the samples at 4.2 K and magnetic fields from 0 to 4.5 T were used with a view to determine the electron concentration in both wells from the FFT spectra of the Shubnikov-de-Haas oscillations. Figure 2 depicts, as an example, the FFT-spectrum for the sample with the delta-doping potential well [13]. It is seen that nearly all electrons in this sample at 4.2 K are in the QW1.…”

Section: Experimental Details and Results Of Measurementsmentioning

confidence: 99%

A peculiarity of quantum hot-electron real space transfer in dual-channel GaAs-based heterostructures

et al. 2017

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The model has been proposed for calculation of the electron transport via the double conducting channels formed in heterostructures with the tunnel-coupled quantum wells with the essentially different mobility of electrons. Experiments to test the dependences of the transport characteristics on the temperature and electric field were carried out on the heterostructures based on GaAs. The well with a high electron mobility was formed as an AlGaAs-GaAs-AlGaAs undoped quantum well. The tunnel-coupled well was formed either by a delta layer of impurity or a short-period superlattice (SPSL) fragment. Based on comparison of the experimental and calculated data, it is established that the electron temperatures in such coupled channels in the course of heating them by the electric field strongly differ from each other; their dependences in both wells on the electric field are found. This difference leads to a considerable redistribution of electrons between wells. For the structure with the SPSL fragment at fields more than 450 V cm −1 an inversion of the electron population between the two lower size-quantization energy subbands takes place.

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Section: Experimental Details and Results Of Measurementsmentioning

confidence: 99%

A peculiarity of quantum hot-electron real space transfer in dual-channel GaAs-based heterostructures

et al. 2017

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Lateral ambipolar drift of the excess charge carriers in the GaAs-based heterostructures with quantum wells and impurity δ-layers in the adjacent barriers

Vainberg,

Pylypchuk,

Poroshin

et al. 2024

Physica E: Low-dimensional Systems and Nanostructures

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Simultaneous magneto-electro-optical measurements in modulation-doped quantum well: An investigation on magneto-photoluminescence intensity oscillations

Haldar

Vashisht

Porwal

et al. 2019

Journal of Applied Physics

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Quantum Hall and magneto-photoluminescence (magneto-PL) measurements are simultaneously performed on a GaAs quantum well to establish a detailed correlation between magneto-optical and magneto-transport properties of charge carriers. The longitudinal/transverse magneto-resistances under dark and illuminated conditions provide insight into an electron–electron interaction that pushes charge carriers toward the heterointerfaces. It is observed that photogenerated holes screen this interaction potential and annihilate the accumulation of electrons in the ground energy state. In this process, carriers from excited states are redistributed in lower energy sub-bands, which affect the quantum scattering time of carriers. In particular, the scattering time associated with an excited state is significantly reduced as compared to the ground state. Under this condition, the redistribution of charges among Landau states is probed by the magneto-PL measurements. Also, magneto-PL spectroscopy is used to estimate recombination time, carrier occupancy in Landau states, and Fermi energy as a function of a magnetic field. In our previous work [J. Lumin. 206, 342 (2019)], it was demonstrated that a variation in the strength/orientation of a magnetic field can control the recombination and separation of charges, where the PL spectra under a parallel magnetic field help to acquire anisotropic properties of charge carriers. Here, a similar method is used to estimate the anisotropic properties of carriers under an external electric field and then correlated with that obtained from quantum Hall measurements during illumination. Furthermore, a new method to record magneto-PL intensity oscillations is described, which can be used to realize magneto-optical properties of carriers without any line-shape fitting procedure.

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Influence of conduction via a channel of an impurity δ-layer on the magneto-quantum effects in AlGaAs/GaAs/AlGaAs heterostructures

Cited by 5 publications

References 17 publications

A peculiarity of quantum hot-electron real space transfer in dual-channel GaAs-based heterostructures

A peculiarity of quantum hot-electron real space transfer in dual-channel GaAs-based heterostructures

Lateral ambipolar drift of the excess charge carriers in the GaAs-based heterostructures with quantum wells and impurity δ-layers in the adjacent barriers

Simultaneous magneto-electro-optical measurements in modulation-doped quantum well: An investigation on magneto-photoluminescence intensity oscillations

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