Influence of constant current stress on the conduction mechanisms of reverse leakage current in UV-A light emitting diodes

Wang, Yingzhe; Zheng, Xuefeng; Feng, Dejun; Zhu, Jiaduo; Li, Peixian; Ma, Xiaohua

doi:10.1016/j.spmi.2017.09.015

Cited by 3 publications

(1 citation statement)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Ultraviolet (UV) light has been widely used in numerous applications including wastewater treatment and reuse, counterfeit detection, lighting, fluoro-sensing, and more [1,2,3,4]. As the emitter of ultraviolet radiation, the ultraviolet light emitting diodes (UV LEDs) exhibit significant advantages compared to the traditional counterparts due to their high reliability and environmental friendliness, especially in UV-A (315–400 nm) scenarios [4].…”

Section: Introductionmentioning

confidence: 99%

Investigation of Step-Stress Accelerated Degradation Test Strategy for Ultraviolet Light Emitting Diodes

et al. 2019

View full text Add to dashboard Cite

III-nitride-based ultraviolet light emitting diode (UV LED) has numerous attractive applications in air and water purification, UV photolithography, and in situ activation of drugs through optical stimulus, solid state lighting, polymer curing, and laser surgery. However, the unclear failure mechanisms and uncertainty reliability have limited its application. Therefore, a design of an appropriate reliability test plan for UV LEDs has become extremely urgent. Compared to traditional reliability tests recommended in LED lighting industry, the step-stress accelerated degradation test (SSADT) is more cost-effective and time-effective. This paper compares three SSADT testing plans with temperature and driving currents as stepwise increasing loads to determine an appropriate test strategy for UV LEDs. The study shows that: (1) the failure mechanisms among different SSADT tests seem to be very different, since the driving current determines the failure mechanisms of UV LEDs more sensitively, and (2) the stepped temperature accelerated degradation test with an appropriate current is recommended for UV LEDs.

show abstract

Section: Introductionmentioning

confidence: 99%

Investigation of Step-Stress Accelerated Degradation Test Strategy for Ultraviolet Light Emitting Diodes

et al. 2019

View full text Add to dashboard Cite

show abstract

Observation and Modeling of Leakage Current in AlGaN Ultraviolet Light Emitting Diodes

Tao

Zhang

Zhi

et al. 2019

IEEE Photon. Technol. Lett.

View full text Add to dashboard Cite

Study of ultraviolet light emitting diodes with InGaN quantum dots and lattice matched superlattice electron blocking layers

Zhang,

Yao,

et al. 2024

Opt. Express

View full text Add to dashboard Cite

Ultraviolet light emitting diodes (UV-LEDs) face the challenges including insufficient hole injection and severe electron leakage. Quantum dots (QDs) have been proven to provide three-dimensionally localized states for carriers, thereby enhancing carrier confinement. Therefore, UV-LEDs employing InGaN QDs are designed and studied in this paper. The APSYs software is used to simulate UV-LEDs. Simulation results indicate that the QDs effectively improve the electron and hole concentration in the active region. However, UV-LEDs with QDs experience efficiency droop due to serious electron leakage. What’s more, the lattice mismatch between last quantum barrier (LQB) and electron blocking layer (EBL) leads to the polarization field, which induces the downward band bending at the LQB/EBL interface and reduces effective barrier height of EBL for electrons. The AlInGaN/AlInGaN lattice matched superlattice (LMSL) EBL is designed to suppress electron leakage while mitigating lattice mismatch between LQB and EBL. The results indicate that the utilization of QDs and LMSL EBL contributes to increasing the electron and hole concentration in the active region, reducing electron leakage, enhancing radiative recombination rate, and reducing turn-on voltage. The efficiency droop caused by electron leakage is mitigated. When the injection current is 120 mA, the external quantum efficiency is increased to 9.3% and the output power is increased to 38.3 mW. This paper provides a valuable reference for addressing the challenges of insufficient hole injection and severe electron leakage.

show abstract

Influence of constant current stress on the conduction mechanisms of reverse leakage current in UV-A light emitting diodes

Cited by 3 publications

References 31 publications

Investigation of Step-Stress Accelerated Degradation Test Strategy for Ultraviolet Light Emitting Diodes

Investigation of Step-Stress Accelerated Degradation Test Strategy for Ultraviolet Light Emitting Diodes

Observation and Modeling of Leakage Current in AlGaN Ultraviolet Light Emitting Diodes

Study of ultraviolet light emitting diodes with InGaN quantum dots and lattice matched superlattice electron blocking layers

Contact Info

Product

Resources

About