Influence of copper composition and reaction temperature on the properties of CZTSe thin films

Olğar, M.A.; Atasoy, Yavuz; Başol, B.M.; Tomakin, Murat; Aygün, Gülnur; Özyüzer, L.; Bacaksız, Emin

doi:10.1016/j.jallcom.2016.04.309

Cited by 32 publications

(7 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In the first part, deposition methods can be categorized as vacuum and non-vacuum techniques. Vacuum methods are for example pulsed laser deposition [5], thermal evaporation [6,7], e-beam evaporation [8], and magnetron sputtering [9][10][11][12]. The most commonly used non-vacuum methods are electrodeposition [13][14][15], spray pyrolysis [16,17], sol-gel deposition [18], doctor-blading or spincoating of nanoparticles [19,20], or spin-coating or spray-deposition of molecular precursors [21].…”

Section: Introductionmentioning

confidence: 99%

Cu 2 ZnSnS 4 -based thin films and solar cells by rapid thermal annealing processing

et al. 2017

Self Cite

View full text Add to dashboard Cite

In this study, kesterite Cu 2 ZnSnS 4 (CZTS) absorber layers were fabricated by DC magnetron sputtering deposition of metallic Cu-Zn-Sn precursors, followed by an annealing treatment in sulfur vapor atmosphere at 600°C for 3 min using rapid thermal processing (RTP). Three types of stacked metallic films were prepared and included pre-annealing of Cu-Sn stacks in order to induce preferential Cu-Sn alloying. The chemical composition of the sulfurized films was obtained by X-ray fluorescence (XRF) before and after etching the samples in KCN solution. All CZTS thin films are found to be Cu-poor and Zn-rich. Structural characterizations were performed by X-ray diffraction (XRD) and Raman spectroscopy to investigate the impact of pre-annealing on the structural properties of the precursors and final CZTS films. Glow discharge optical emission spectroscopy (GDOES) shows that preannealing of the precursors can improve depth homogeneity of the CZTS films. Photoluminescence spectra and the optical band gap energy values are compatible with literature. Selected samples were processed to solar cells and characterized.

show abstract

Section: Introductionmentioning

confidence: 99%

Cu 2 ZnSnS 4 -based thin films and solar cells by rapid thermal annealing processing

et al. 2017

Self Cite

View full text Add to dashboard Cite

show abstract

“…After the Se evaporation step, the (Cu-Zn-Sn)/Se precursor layers were reacted for 15 min in a tube furnace in a static 5%H 2 + 95%Ar atmosphere at 550°C. For simulating a rapid thermal process, the tube furnace with the process gas was first heated to the reaction temperature and the samples were then rapidly pushed into the hot zone [11]. The estimated ramping rate of the temperature in these experiments was about 5°C/s.…”

Section: Methodsmentioning

confidence: 99%

“…Since the CZTSe thin films were grown on conductive and non-transparent substrates, optical transmission and the electrical measurement in the plane of the films could only be performed after they were transferred from their substrates onto glass slides by transparent epoxy peeling approach as previously utilized by Basol [19]. The detailed experimental procedures used for mechanical transfer of the reacted films onto glass were described in our recent publication [11]. The crystalline structure and the structural quality of the films were determined by XRD measurements using a Rigaku SmartLab diffractometer with a CuKα radiation source (λ = 1.5405 Å) at room temperature.…”

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

Effect of heat treating metallic constituents on the properties of Cu2ZnSnSe4 thin films formed by a two-stage process

et al. 2017

Self Cite

View full text Add to dashboard Cite

In this study Cu 2 ZnSnSe 4 (CZTSe) thin films were grown by a two-stage process that involved sputter deposition of a Cu/Sn/Zn/Cu metallic stack, annealing the stack at various temperatures for 30 min, evaporation of a Se cap over the metallic stack thus forming a precursor layer, and subjecting the precursor layer to a final high temperature reaction step at 550°C. Different samples were prepared with annealing temperatures of the metallic stacks ranging from 200°C to 350°C. The results showed that heat treatment of the metallic stacks did not cause much change in their morphology and elemental composition, however their phase content changed noticeably when the anneal temperature was raised to 250°C. Specifically, while the metallic films were dominated by CuSn and Cu 5 Zn 8 phases at low temperatures, the dominant phase shifted to Cu 6 Sn 5 at the annealing temperature of 250°C and higher. Also formation of a distinct Cu 3 Zn 2 phase was observed upon annealing at temperatures at or above 250°C. After reaction with Se, the CZTSe layer obtained from the metallic film, which was annealed at 250°C was found to be the best n terms of its composition, crystalline quality and purity, although it contained a small amount of CuSe. The other layers were found to contain small amounts of other secondary phases such as SnSe, CuSe 2 , ZnSe and Cu 2 SnSe 3 . SEM micrographs showed denser structure for CZTSe layers grown from metallic films annealed at or above 250°C. Optical band gap, resistivity and carrier concentration of the best quality CZTSe film were found to be about 0.87 eV, 2 Ω-cm and 4 × 10 17 cm −3 , respectively.

show abstract

“…Most of the reported studies have focused on the optimizing fabrication parameters of the CZTS absorber layer since solar cell efficiency is strongly-dependent on the quality of the absorber layer. These studies include optimization of the sulfurization temperature [13] , sulfurization time [14], variation order of the metallic stack [15], composition of film [16,17], and the pressure of the sulfurization [18,19] etc. The prior works have suggested that although high reaction temperatures (> 500 °C) may enhance the grain morphology, it also gives rise to loss of Sn and Zn thanks to the high vapor pressure of SnS and Zn [20].…”

Section: Introductionmentioning

confidence: 99%

Growth of Cu2ZnSnS4 Thin Films Using Moderate Annealing Temperature and Short Dwell Time

Olğar

Seyhan

2019

Cumhuriyet Science Journal

View full text Add to dashboard Cite

In this study CZTS thin films were fabricated by a two-stage process that sputter deposition of metallic Cu, Zn, and Sn on Mo coated glass substrates and annealing process at 500 °C using various short dwell times (4, 8, and 12 min) using Rapid Thermal Processing (RTP) approach. The X-ray diffraction (XRD), Raman spectroscopy, Scanning Electron Microscopy (SEM), Energy Dispersive X-ray Spectroscopy (EDX), and photoluminescence were employed to characterize the CZTS samples synthesized employing different sulfurization times. It was observed that all CZTS thin films showed Cu-poor and Zn-rich composition according to EDX results. XRD patterns displayed formation of kesterite CZTS and CuS secondary phases. Raman spectra of the films justified formation of kesterite CZTS phase for all CZTS thin films and formation of CTS phase, which is difficult to distinguish by XRD pattern of the films for CZTS-8 and CZTS-12 samples. SEM images of the films displayed dense, void-free, and inhomogeneous surface structure regardless of the sulfurization time. The optical band gap of the films as determined by photoluminescence was found to be about 1.36-1.37 eV.

show abstract

Influence of copper composition and reaction temperature on the properties of CZTSe thin films

Cited by 32 publications

References 28 publications

Cu 2 ZnSnS 4 -based thin films and solar cells by rapid thermal annealing processing

Cu 2 ZnSnS 4 -based thin films and solar cells by rapid thermal annealing processing

Effect of heat treating metallic constituents on the properties of Cu2ZnSnSe4 thin films formed by a two-stage process

Growth of Cu2ZnSnS4 Thin Films Using Moderate Annealing Temperature and Short Dwell Time

Contact Info

Product

Resources

About