2015
DOI: 10.1016/j.jiec.2014.01.047
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Influence of Cr incorporation on structural, dielectric and optical properties of ZnO nanoparticles

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Cited by 119 publications
(15 citation statements)
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“…It is seen that σ ac decreases with increasing Ni concentration in SnO 2 . , Defects are formed in the SnO 2 system by doping, while upon sintering of the pellets, defects tend to separate at the grain boundaries through the diffusion process. Hence, the defects hinder the transportation of charge carriers and decrease the conductivity of the sample …”
Section: Characterizationmentioning
confidence: 96%
See 1 more Smart Citation
“…It is seen that σ ac decreases with increasing Ni concentration in SnO 2 . , Defects are formed in the SnO 2 system by doping, while upon sintering of the pellets, defects tend to separate at the grain boundaries through the diffusion process. Hence, the defects hinder the transportation of charge carriers and decrease the conductivity of the sample …”
Section: Characterizationmentioning
confidence: 96%
“…The appearance of relaxation peaks is due to the hopping frequency of the charge carriers matched with the frequency of the applied ac electric field. The disappearance of the relaxation peak in SN7 reveals the high-resistivity nature of the sample …”
Section: Characterizationmentioning
confidence: 98%
“…At lower frequencies, all samples exhibit high dielectric constant, the value of (ε′) decreases as the frequency increases, which may be attributed to interfacial relaxation effect also known as Maxwell‐Wagner‐Sillars (MWS) effect. The decrease in dielectric constants indicates that good conductive grains become created within isolated grain boundaries 55 . The effect of charge polarization has been represented by the higher values of the dielectric at lower frequency region; electrical dipoles get sufficient time to align with the field before the variation of the electric field, then the dielectric constant becomes high.…”
Section: Resultsmentioning
confidence: 99%
“…Some of the metal dopants suitable for ZnO are Ag, Au, Cu, Cr, and Ni. , Among these, Cr is a suitable candidate due to the close ionic radii to zinc (Zn) implies that Cr 3+ can easily penetrate and replace Zn 2+ ions in the ZnO lattice. The transition metal dopant is mainly preferred for enhancing the transport and photoemission properties. A variety of methods have been utilized to prepare doped ZnO, including the electron beam evaporation technique, the sol–gel approach, the chemical method, the sputtering method, and the hydrothermal method. , However, fabricating porous material usually consists of complicated procedures, but the hydrothermal process can be followed using urea with a zinc precursor combined with calcination.…”
Section: Introductionmentioning
confidence: 99%