Influence of crystal orientation and body doping on trigate transistor performance

Landgraf, E.; Rosner, W.; Städele, M.; Dreeskornfeld, L.; Hartwich, J.; Hofmann, Franz; Kretz, Johannes; Lutz, Theresa; Luyken, R.J.; Schulz, T.; Specht, Michael; Risch, L.

doi:10.1016/j.sse.2005.10.041

Cited by 34 publications

(25 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…21 represents electron mobilities in FinFETs with various fin orientations. An improvement of electron mobility is observed for <100> and an enhancement of hole mobility has also been shown for <110> orientation [20]. …”

Section: Fig 17 Electron Mobility In 23-nm Ultra-thin-body Fet Undmentioning

confidence: 67%

Performance and new effects in advanced SOI devices and materials

Jomaah

2005

Microelectronic Engineering

View full text Add to dashboard Cite

Section: Fig 17 Electron Mobility In 23-nm Ultra-thin-body Fet Undmentioning

confidence: 67%

Performance and new effects in advanced SOI devices and materials

Jomaah

2005

Microelectronic Engineering

View full text Add to dashboard Cite

“…The sidewall surfaces have a (1 1 0) crystallographic orientation that degrades the electron mobility compared with the standard planar (1 0 0) orientation [16]. In order to avoid this mobility degradation the devices are rotated by 45°, yielding in that way the same top surface (1 0 0) plane [17,18]. Although, this improvement is only observed on nMuGFET devices, considering that hole mobility (pMuGFET) is degraded on a (1 0 0) sidewall current direction [19].…”

Section: Introductionmentioning

confidence: 99%

Influence of the sidewall crystal orientation, HfSiO nitridation and TiN metal gate thickness on n-MuGFETs under analog operation

Rodrigues¹,

Galeti²,

Martino³

et al. 2011

Solid-State Electronics

View full text Add to dashboard Cite

“…Some recent works report the influence of substrate rotation on the performance of triple-gate MuGFETs at room temperature, mainly focusing on carrier mobility, noise and analog parameters (5,6,7). Nevertheless, no analysis of the impact of temperature variation on the electrical characteristics of devices built in standard non-rotated and 45 o rotated devices have been presented yet.…”

Section: Introductionmentioning

confidence: 99%

Impact of Substrate Rotation and Temperature on the Mobility and Series Resistance of Triple-Gate SOI nMOSFETs

et al. 2011

View full text Add to dashboard Cite

In this work a comparative experimental analysis of the electron mobility and parasitic source-drain series resistance of triple-gate n-channel MOSFETs as a function of the temperature is carried out. Devices with different fin widths fabricated on standard non-rotated and 45o rotated SOI substrates were analyzed for temperatures ranging from 250 K to 400 K. It is shown that the use of rotated substrate does not affect the subthreshold slope or the threshold voltage variation with temperature of these devices. On the other hand, the change in the conduction plane not only improves the mobility, but also promotes a rise of its variation with temperature. Although the fin width reduction may cause an increase of the series resistance, the increased mobility of rotated devices is responsible for the series resistance roll-off and this reduction becomes larger as the fin is narrowed.

show abstract

Influence of crystal orientation and body doping on trigate transistor performance

Cited by 34 publications

References 8 publications

Performance and new effects in advanced SOI devices and materials

Performance and new effects in advanced SOI devices and materials

Influence of the sidewall crystal orientation, HfSiO nitridation and TiN metal gate thickness on n-MuGFETs under analog operation

Impact of Substrate Rotation and Temperature on the Mobility and Series Resistance of Triple-Gate SOI nMOSFETs

Contact Info

Product

Resources

About