Influence of Cu(In,Ga)(Se,S)2 surface treatments on the properties of 30×30cm2 large area modules with atomic layer deposited Zn(O,S) buffers

Merdes, S.; Steigert, Alexander; Ziem, F.; Lauermann, Iver; Hergert, F.; Kaufmann, Christian A.; Schlatmann, Rutger

doi:10.1016/j.tsf.2014.11.049

Cited by 7 publications

(3 citation statements)

References 13 publications

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“…This particular set of requirements may be difficult to achieve with conventional solution processed thin-film deposition techniques. 8,9 TiO 2 and ZnO are the materials of choice, although permitting high photovoltaic conversion efficiencies, they are prone to light soaking and require UV activation before proper device operation. 10 ZnO is good for encapsulation, providing an efficient barrier against humidity and oxygen, but its conductivity deteriorates under damp heat conditions.…”

Section: Introductionmentioning

confidence: 99%

“…Charge transport layers have to obey very strict quality standards: their surface should be homogeneous, without marked defects and pinholes; moreover, the deposition technique employed for them should permit coverage of large areas so that up-scaled device production can be viable. This particular set of requirements may be difficult to achieve with conventional solution processed thin-film deposition techniques. , TiO 2 and ZnO are the materials of choice, although permitting high photovoltaic conversion efficiencies, they are prone to light soaking and require UV activation before proper device operation . ZnO is good for encapsulation, providing an efficient barrier against humidity and oxygen, but its conductivity deteriorates under damp heat conditions .…”

Section: Introductionmentioning

confidence: 99%

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Unintentional Hydrogen Incorporation into the SnO₂ Electron Transport Layer by ALD and Its Effect on the Electronic Band Structure

Martínez-Puente

Tirado

Jaramillo

et al. 2021

ACS Appl. Energy Mater.

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This work reports the influence of atomic layer deposition (ALD) using its variants as thermal ALD, remote plasma ALD (RPALD), and direct plasma ALD on the physical parameters of the as-deposited SnO x films. The deposition process and chemical composition are related to their electronic band structure such as valence band maximum, conduction band minimum, band gap, and work function. Oxidant agents such as H 2 O, O 2 , and O 3 were evaluated with deposition temperatures of 80 and 200 °C. Each of the SnO x films were integrated into a solar cell prototype as an electron transport layer, yielding the maximum photovoltaic efficiency of 15.15% for the cell using the SnO x film obtained with oxygen-assisted RPALD at 80 °C. Tin oxides deposited at 200 °C using ozone and oxygen, respectively, feature surface plasmon resonance (SPR) under near-infrared irradiation (0.5 eV), which was detected by reflection electron energy loss and X-ray photoelectron spectroscopies. The unintentionally incorporated substitutional hydrogen acting as a shallow donor is responsible for the SPR effect, defect states in the band gap, and considerably reducing photovoltaic efficiency of the solar cells studied. This doping can be detected by in situ quadrupole mass spectroscopy characterization in the absence of CH 2 among reaction byproducts at the ALD oxidation step.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Unintentional Hydrogen Incorporation into the SnO₂ Electron Transport Layer by ALD and Its Effect on the Electronic Band Structure

Martínez-Puente

Tirado

Jaramillo

et al. 2021

ACS Appl. Energy Mater.

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“…One promising alternative buffer layer material for achieving a high conversion efficiency of the respective solar cells and modules is Zn(O,S), which may be deposited by, e.g., CBD, 2,5,6) magnetron sputtering, [7][8][9][10][11][12][13][14] or atomic layer deposition (ALD). [15][16][17][18][19][20] CBD of Zn(O,S) buffer layers is already applied in highly efficient solar cells 2,6) but this technologyin comparison with sputtering and ALDoffers limited options for the deliberate adjustment of [S]= ([S]+[O]) (SSO) ratios. Studies on this topic using sputtering and ALD methods have shown that there seems to be an optimal range of the SSO ratio, at least for the particular sample under investigation.…”

Section: Introductionmentioning

confidence: 99%

Interface engineering of Cu(In,Ga)Se₂and atomic layer deposited Zn(O,S) heterojunctions

Schmidt

Merdes

Steigert

et al. 2017

Jpn. J. Appl. Phys.

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Atomic layer deposition of Zn(O,S) is an attractive dry and Cd-free process for the preparation of buffer layers for chalcopyrite solar modules. As we previously reported, excellent cell and module efficiencies were achieved using absorbers from industrial pilot production. These absorbers were grown using a selenization/sulfurization process. In this contribution we report on the interface engineering required to adapt the process to sulfur-free multi source evaporated absorbers. Different approaches to a local sulfur enrichment at the heterojunction have been studied by using surface analysis (XPS) and scanning transmission electron microscopy. We correlate the microstructure and element distribution at the interface with device properties obtained by electronic characterization. The optimized completely dry process yields cell efficiencies >16% and 30 × 30 cm2 minimodule efficiencies of up to 13.9% on industrial substrates. Any degradation observed in the dry heat stress test is fully reversible after light soaking.

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Deposition, characterizations and photoelectrochemical performance of nanocrystalline Cu–In–Cd–S–Se thin films by hybrid chemical process

et al. 2017

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Influence of Cu(In,Ga)(Se,S)2 surface treatments on the properties of 30×30cm2 large area modules with atomic layer deposited Zn(O,S) buffers

Cited by 7 publications

References 13 publications

Unintentional Hydrogen Incorporation into the SnO₂ Electron Transport Layer by ALD and Its Effect on the Electronic Band Structure

Unintentional Hydrogen Incorporation into the SnO₂ Electron Transport Layer by ALD and Its Effect on the Electronic Band Structure

Interface engineering of Cu(In,Ga)Se₂and atomic layer deposited Zn(O,S) heterojunctions

Deposition, characterizations and photoelectrochemical performance of nanocrystalline Cu–In–Cd–S–Se thin films by hybrid chemical process

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Influence of Cu(In,Ga)(Se,S)2 surface treatments on the properties of 30×30cm2 large area modules with atomic layer deposited Zn(O,S) buffers

Cited by 7 publications

References 13 publications

Unintentional Hydrogen Incorporation into the SnO2 Electron Transport Layer by ALD and Its Effect on the Electronic Band Structure

Unintentional Hydrogen Incorporation into the SnO2 Electron Transport Layer by ALD and Its Effect on the Electronic Band Structure

Interface engineering of Cu(In,Ga)Se2and atomic layer deposited Zn(O,S) heterojunctions

Deposition, characterizations and photoelectrochemical performance of nanocrystalline Cu–In–Cd–S–Se thin films by hybrid chemical process

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Product

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Unintentional Hydrogen Incorporation into the SnO₂ Electron Transport Layer by ALD and Its Effect on the Electronic Band Structure

Unintentional Hydrogen Incorporation into the SnO₂ Electron Transport Layer by ALD and Its Effect on the Electronic Band Structure

Interface engineering of Cu(In,Ga)Se₂and atomic layer deposited Zn(O,S) heterojunctions