2006
DOI: 10.1016/j.jmatprotec.2006.03.106
|View full text |Cite
|
Sign up to set email alerts
|

Influence of cutting conditions scaling in the machining of semiconductors crystals with single point diamond tool

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

0
8
0

Year Published

2009
2009
2021
2021

Publication Types

Select...
6
1

Relationship

0
7

Authors

Journals

citations
Cited by 10 publications
(8 citation statements)
references
References 9 publications
0
8
0
Order By: Relevance
“…They found transition in some areas but with no specific orientation for lithium niobate, and concluded that ductile cutting of this highly brittle material required a vibration-free machine tool and low thickness of cut. Jasinevicius (2006) reported indentation and diamond turning experiments for materials such as gallium arsenide (GaAs) and indium antimonide (InSb). It was found that InSb was very favorable for ductile cutting at feeds ranging from 1.25 to 7.5 m/rev.…”
Section: Introductionmentioning
confidence: 99%
“…They found transition in some areas but with no specific orientation for lithium niobate, and concluded that ductile cutting of this highly brittle material required a vibration-free machine tool and low thickness of cut. Jasinevicius (2006) reported indentation and diamond turning experiments for materials such as gallium arsenide (GaAs) and indium antimonide (InSb). It was found that InSb was very favorable for ductile cutting at feeds ranging from 1.25 to 7.5 m/rev.…”
Section: Introductionmentioning
confidence: 99%
“…The study of the machining of single crystal brittle material is first based on experi mental investigations. The single point diamond turning of silicon effect of process parameters on surface finish and tool wear is reported by Jasinevicius [3] who found that the ductile regime turning is realized at large tool feed up to some hundreds of micro meters on indium antimonide which presents lower transition pressure value. Li et al [4] explained the effect of the tool wear on the ductile machining of silicon wafer, in fact in nanoscale duc tile mode cutting of silicon wafer with single crystalline diamond tools, the tool cutting edges undergo two processes simultane ously-wear on the cutting edge and wear at the tool flank.…”
Section: Introductionmentioning
confidence: 90%
“…Atomistic dynamic model is proposed in [53], where the crack propagation at the silicon nanosized plastic edging is screened by a high compressive stress that brings about the formation of chips mainly by the emission of dislocations and not due to the crack propagation. The pressure dependence of the plastic -brittle transi tion in semiconductors in turning by diamond cutters is discussed in [54,55]. Studies in microindentation and turning are carried out using three different <001> crystallographically oriented semiconductors, namely, InSb, CaAs, and Si.…”
Section: Investigations Of Phase Transitions and Ductile Cutting Of Bmentioning
confidence: 99%