Influence of defect on the electrical and optical properties of A-site non-stoichiometry Ca0.67La0.22□0.11Ti(1−x)CrxO3−δ perovskite

Hassen, Afef Ben; Rhouma, F.I.H.; Daoudi, M.; Dhahri, J.; Zaïdi, M. A.; Abdelmoula, N.

doi:10.1039/c9ra02815c

Cited by 19 publications

(6 citation statements)

References 78 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This deals with the increase in orientation polarization, which leads to an increase in dielectric constant. [22][23][24][25][26][27][28][29][30][31][32][33] The mobility of charge carriers increases due to increased temperature. This case causes an increase in the dielectric loss.…”

Section: Resultsmentioning

confidence: 99%

“…Besides, the temperature-dependent σ ac is for the reason that the increase in thermally activated carrier mobility and thermal activation of hopping frequency. [27][28][29][30][31][32][33] Therefore, the current transport in the MOS capacitor may be the result of the hopping conduction of thermally activated electrons under ac field. Also, the frequencydependent σ ac is due to the polarization effects.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Dielectric, Conductivity and Modulus Properties of Au/ZnO/p-InP (MOS) Capacitor

Acar

Uyar

Tataroğlu

2023

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

Dielectric, conductivity, and modulus properties of a metal oxide semiconductor (MOS) capacitor with zinc oxide (ZnO) interlayer produced via radio-frequency magnetron sputtering were investigated using admittance spectroscopy measurements. Frequency and temperature dependence of the complex dielectric permittivity (*='-i''), dielectric loss factor (tan ), ac conductivity (ac), and complex electric modulus (M*=M'+iM'') were studied in temperature interval of 100-400 K for two frequencies (100 and 500 kHz). While the dielectric constant (') and loss ('') value increase as the temperature rises, their values decrease as the frequency rises. The increase in ' and '' is explained by thermal activation of charge carriers. Also, the ac value increases both frequency and temperature increase. The thermal activation energy was determined from slope of Arrhenius plot.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Dielectric, Conductivity and Modulus Properties of Au/ZnO/p-InP (MOS) Capacitor

Acar

Uyar

Tataroğlu

2023

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…The conductance data of our manganites is well described by the following equation. [ 33 ]

G false(w false) = G_{DC} + G_{AC} = G_{DC} + A w^{n 1} + B w^{n 2}

where Aw n1 refers to the middle frequency region of the electrical conductance, in which n1 describes the short‐range hopping motion. However, the term Bw n2 refers to the higher frequency region, in which n2 corresponds to the localized or reoriented hopping motion.…”

Section: Resultsmentioning

confidence: 99%

Effect of Co‐Doping on the Structural and Dielectric Properties of La_0.8K_0.2MnO₃ Perovskite

Lassoued

Baazaoui

Alhodaib

et al. 2022

Physica Status Solidi (a)

View full text Add to dashboard Cite

In this work, the effect of cobalt ions on the structural and dielectric properties of La0.8K0.2MnO3 manganite prepared via the simplest sol–gel route is studies. The X‐ray diffractions analyses reveal that our perovskites, with the general formula La0.8K0.2Mn1−xCoxO3 (x = 0, 0.03, 0.06), crystallized by a rhombohedral structure with R3¯c space group. Rietveld refinement indicates that each octahedron (Mn, Co)O6 has little deformation and that the θ(Mn, Co)–O–(Mn, Co) bond angles decrease with increasing Co content. From the conductance measurements, it is noticed that the substitution into the Mn site of the LaKMnO3 material by cobalt increases its conductivity. However, the electrical conductance of our perovskites is well described by the universal Jonscher's law. It is deduced that the conduction process of the present structures occurs between neighboring sites. In addition, the dielectric constant and loss tangent can be explicated based on Maxwell–Wagner polarization. Finally, the Nyquist diagram is fitted by an adequate equivalents circuit, the obtained results depict a non‐Debye relaxation process in these materials.

show abstract

“…The shifting and broadening effects of the peaks are associated with a non-Debye type of distribution of the relaxation time and thermal activation process of the dipoles. 47,48 The relaxation behaviour was further investigated in terms of electrical modulus ( M ′ and M ′′) analysis. The real ( M ′) and imaginary ( M ′′) part of the modulus spectrum was extracted from the dielectric constant data.…”

Section: Resultsmentioning

confidence: 99%

The electrical behaviour of ultrafine bismuth phosphate particles under a range of temperature and frequency conditions

2022

View full text Add to dashboard Cite

show abstract

Influence of defect on the electrical and optical properties of A-site non-stoichiometry Ca_0.67La_0.22□_0.11Ti_(1−x)Cr_xO_3−δ perovskite

Abstract: An investigation of the real part of permittivity for the compositions (a) x = 0 and (b) x = 0.1 solid solution Ca0.67La0.22□0.11Ti(1−x)CrxO3−δ ceramics.

Cited by 19 publications

References 78 publications

Dielectric, Conductivity and Modulus Properties of Au/ZnO/p-InP (MOS) Capacitor

Dielectric, Conductivity and Modulus Properties of Au/ZnO/p-InP (MOS) Capacitor

Effect of Co‐Doping on the Structural and Dielectric Properties of La_0.8K_0.2MnO₃ Perovskite

The electrical behaviour of ultrafine bismuth phosphate particles under a range of temperature and frequency conditions

Contact Info

Product

Resources

About

Influence of defect on the electrical and optical properties of A-site non-stoichiometry Ca0.67La0.22□0.11Ti(1−x)CrxO3−δ perovskite

Abstract: An investigation of the real part of permittivity for the compositions (a) x = 0 and (b) x = 0.1 solid solution Ca0.67La0.22□0.11Ti(1−x)CrxO3−δ ceramics.

Cited by 19 publications

References 78 publications

Dielectric, Conductivity and Modulus Properties of Au/ZnO/p-InP (MOS) Capacitor

Dielectric, Conductivity and Modulus Properties of Au/ZnO/p-InP (MOS) Capacitor

Effect of Co‐Doping on the Structural and Dielectric Properties of La0.8K0.2MnO3 Perovskite

The electrical behaviour of ultrafine bismuth phosphate particles under a range of temperature and frequency conditions

Contact Info

Product

Resources

About

Influence of defect on the electrical and optical properties of A-site non-stoichiometry Ca_0.67La_0.22□_0.11Ti_(1−x)Cr_xO_3−δ perovskite

Effect of Co‐Doping on the Structural and Dielectric Properties of La_0.8K_0.2MnO₃ Perovskite