Influence of deposition parameters on the structural and optical properties of CdS thin films obtained by micro-controlled SILAR deposition

Rao, Gowrish K.; Ashith, V.K.

doi:10.1016/j.jpcs.2014.09.008

Cited by 21 publications

(8 citation statements)

References 24 publications

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“…Many deposition methods of physical and chemical nature have been employed to deposit cadmium sulphide thin films for various applications such as SILAR, metal organic chemical vapour deposition technique, chemical spray pyrolysis, vacuum thermal evaporation, electro-deposition and chemical bath deposition (CBD) or solution growth technique (Abbas & Ahmad, 2013;Abulmackarim et al, 2014;Rao, & Asthith, 2015;Salim et al, 2016;Toma et al, 2021). The chemical bath deposition and solution growth technique has been widely used to synthesis high quality binary and ternary thin films due to its numerous advantages over other methods which include; simplicity, low cost of deposition, excellent film to substrates adhesion as well as low growth temperature and uniformity of films (Emegha et al, 2022a).…”

Section: Introductionmentioning

confidence: 99%

Influence of Molar Concentrations on Chemical Bath Deposited Cadmium Sulphide Thin Films

Emegha¹

2022

SLUJST

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Thin films (TFs) of cadmium sulphide (CdS) have been deposited at 300K on soda-lime substrates. The effect of the molar concentrations was investigated using the X-ray diffraction (XRD) and UV-Vis Spectrophotometer. The XRD measurements show that the TFs were crystalline and increases with increasing molarities. The optical characteristics of the films were studied at spectra range of 300 – 950 nm. It indicated that the band gap energy ranged between 1.80 to 1.83 eV. The films exhibited a high transmittance in the visible and near infrared regions with a low reflectance values within same regions. Other optical constants like extinction coefficient (K), refractive index (n), real (Ɛᵣ) and imaginary (Ɛᵢ) dielectric constants and optical conductivity (σ) were determined with respect to photon energy (eV). These properties of CdS TFs confirm that the material could be beneficial in various optoelectronics applications.

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Section: Introductionmentioning

confidence: 99%

Influence of Molar Concentrations on Chemical Bath Deposited Cadmium Sulphide Thin Films

Emegha¹

2022

SLUJST

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“…Such advantages make SILAR a suitable technique for depositing high quality films in developing countries where facilities for expensive and advanced techniques that are not easy to obtain such as RF-sputtering, molecular beam epitaxy, evaporation, etc. [4].…”

Section: Introductionmentioning

confidence: 99%

XRD and UV-Vis Spectroscopic Studies of Lead Tin Sulphide (PbSnS) Thin Films

Damisa

Emegha

2021

Trends Sci

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The effects of deposition cycles on the structural and optical properties of lead tin sulphide (PbSnS) thin films have been described. Successive ionic layer adsorption and reaction (SILAR) method was used to deposit the ternary material on soda-lime substrates. In the present work, the PbSnS films were grown using lead nitrate, tin chloride dehydrate and thioacetamide solutions as sources of Pb, Sn and S, respectively. XRD measurements revealed that the deposited films were polycrystalline in nature with strong adherent to the substrates. The transmittance was found to be high in the near infrared regions of the electromagnetic radiation and, also increased with deposition cycles. The band gap energy was found to vary from 1.70 to 1.75 eV for 10 and 35 deposition cycles. The study indicates that SILAR is an excellent method in depositing good quality films for device applications. HIGHLIGHTS SILAR is an excellent technique for depositing thin films of lead tin sulphide (PbSnS) Deposition cycles influences the XRD and optical properties of PbSnS thin films PbSnS thin films are useful for solar cell fabrications The band gaps of the PbSnS varies from 1.70 to 1.75 eV with deposition cycles

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“…The properties of CdS thin films can be tuned to suit various applications by introducing different amounts of other elements such as zinc. This technique has been used to obtain graded bandgap junctions and lattice matched heterostructures [8][9][10][11][12][13][14][15][16][17]. Theoretically, the bandgap of CdS films can be altered from 2.4 eV to 3.5 eV by introducing zinc in various ratios [10].…”

Section: Introductionmentioning

confidence: 99%

The effects of Zn incorporation on electrical, photoluminescence and spectral sensitivity of SILAR deposited CdS thin films

Ashitha¹,

Priya²,

Ali³

et al. 2020

Mater. Res. Express

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The SILAR deposited CdS films were incorporated with various concentrations of zinc using zinc acetate and zinc chloride precursors. The presence of zinc was found to alter the crystal structure and energy bandgap of the films. The bandgap increased by nearly 44% with the increase of zinc concentration in the films. The photoluminescence spectra of the films revealed the presence of several localized defects levels within the forbidden bandgap. The peak spectral response wavelength was found to vary from 500 nm to 400 nm with the increase of zinc. The photocurrent was found to increase with the Cd:Zn ratio. The films with relatively high concentrations of zinc were found to be better suited for the photodetector applications due to their higher photocurrent to dark current ratio.

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Influence of deposition parameters on the structural and optical properties of CdS thin films obtained by micro-controlled SILAR deposition

Cited by 21 publications

References 24 publications

Influence of Molar Concentrations on Chemical Bath Deposited Cadmium Sulphide Thin Films

Influence of Molar Concentrations on Chemical Bath Deposited Cadmium Sulphide Thin Films

XRD and UV-Vis Spectroscopic Studies of Lead Tin Sulphide (PbSnS) Thin Films

The effects of Zn incorporation on electrical, photoluminescence and spectral sensitivity of SILAR deposited CdS thin films

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