Influence of Deposition Temperature on the Structural and Optoelectronic Properties of CdZnS Thin Films

Rajathi, S.; Subramanian, N. Sankara; Ramanathan, K.; Senthamizhselvi, M.

doi:10.4028/www.scientific.net/amr.699.606

Cited by 5 publications

(3 citation statements)

References 5 publications

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“…The optical band gap values increased from 2.63 to 2.73 eV with the increase of Zn concentration in CdS thin films due to the quantum confinement effect. These results are in consistency with the previous reported values for Zn doped CdS [32,33]. When the Zn content is increased in CdS thin films, the shifting of absorption edge towards shorter wavelength, implies the tuning of the optical band gap.…”

Section: Raman Spectroscopysupporting

confidence: 93%

Structural, surface morphological, optical and thermoelectric properties of sol–gel spin coated Zn doped CdS thin films

2020

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The present work is focussed on Zinc (2, 4, 6, 8 and 10 wt%) doped CdS thin films synthesized by sol-gel spin coating method and deposited on glass substrates. X-ray diffraction patterns of Zn doped CdS thin films exhibit cubic structure. The microstructural properties such as crystallite size, lattice constant, microstrain, dislocation density and stacking fault probability in the films were reported. The surface morphology and topography of the films was studied by using field emission scanning electron microscopy and atomic force microscopy. The incorporation of Zn in CdS and elemental composition of the films has been confirmed with X-ray photoelectron spectroscopy (XPS) and energy dispersive spectroscopy (EDS). Raman spectrum of Zn doped CdS thin films exhibits 1LO and 2LO phonon modes. The optical band gap of CdS thin films increased from 2.63 to 2.73 eV with the increase of Zn dopant from 2 to 10%. Thermoelectric power measurements show negative Seebeck coefficient indicating n-type semiconducting behaviour. The carrier concentration of Zn doped CdS thin films at room temperature are found to be in the range of 10 19-10 20 cm −3 suggesting that the prepared films are degenerate semiconductors. The increase in thermal conductivity of Zn doped CdS thin film is due to the increase in carrier concentration of the films. The lattice thermal conductivity of Zn doped CdS thin films had an inverse temperature dependent and at high temperatures shows the dominance of phonon scattering.

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Section: Raman Spectroscopysupporting

confidence: 93%

Structural, surface morphological, optical and thermoelectric properties of sol–gel spin coated Zn doped CdS thin films

2020

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“…linearly dependent on the zinc content [64,65]. The electrical resistivity of CdS films decreases with film thickness [66] and decreases to 10 5 X cm as the temperature is increased (200-400°C) [67].…”

Section: Resultsmentioning

confidence: 99%

The deposition of thin films of cadmium zinc sulfide Cd1−x Zn x S at 250 °C from spin-coated xanthato complexes: a potential route to window layers for photovoltaic cells

2017

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Thin films of Cd 1-x Zn x S (CZS) were prepared by a novel spin coating/melt method from cadmium ethylxanthato [Cd(C 2 H 5 OCS 2 ) 2 ] and zinc ethylxanthato [Zn(C 2 H 5 OCS 2 ) 2 ] in x ratios of 0-0.15 and of 1. A solution of the precursor(s) in THF was spin coated onto a glass substrate and then heated at 250°C for 1 h under N 2 . The thickness of the film formed can be controlled by varying the solution composition and/or the spin rate of the coating. A total metal precursor solution concentration of 50 mM was used in all cases. The films were characterized by p-XRD, SEM, EDX, ICP-AES, XPS, UV-Vis absorption spectroscopy, Raman spectroscopy and resistivity measurements. The band gaps of the films were between 2.35-2.58 and 3.75 eV (0 B x B 0.15 and at x = 1). The resistivity of Cd 1-x Zn x S films was found to vary linearly with zinc contents, and the properties of the films suggest potential application to photovoltaics as window layers. This work is the first study to demonstrate Cd 1-x Zn x S thin films by a spin coating/melt method from xanthato precursors.

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“…The smaller sizes, in terms of the thickness of the thin film, allow us to see new things, like how size affects structural, electrical, and optical properties [5]. In thin films fabrication, several approaches have been used such as Dip coating [6], spin coating technique [7], chemical vapor deposition method [8], successive ionic layer adsorption and reaction (SILAR) [9], spray pyrolysis method [10] and chemical bath deposition method (CBD) [11]. It's easier, faster, and cheaper to use CBD than any of the other techniques listed above.…”

Section: Introductionmentioning

confidence: 99%

Study the Effect of Deposition Time on Optical Properties of CdZnS Nanofilms

Mohammed¹,

Hessan²,

Musa

et al. 2023

DDF

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The optical properties of CdZnS nanofilms are studied in this paper in relation to the deposition time. Deposition times ranged from 15 to 60 minutes for the CdZnS thin films, which had been developed on surface of glassy substrates. The other factors, such as reactant concentration, solution pH, and bath temperature, were held constant throughout the deposition process. The films were annealed at 200 °C for 120 minutes in a thermal furnace after the deposition process. Measurements of absorbance, transmission spectrum, and direct and indirect energy gaps were made using UV-VIS spectrophotometers. Transmittance in the 400-1000 nm range was 70-90 percent for all of the prepared films. With a wavelength of 600 nm and higher, transmittance was around 90%. CdZnS films have bandgap energies ranging from 2.4–2.15 eV for direct transitions and from 2.1–1.97 eV for indirect band gaps.

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Influence of Deposition Temperature on the Structural and Optoelectronic Properties of CdZnS Thin Films

Cited by 5 publications

References 5 publications

Structural, surface morphological, optical and thermoelectric properties of sol–gel spin coated Zn doped CdS thin films

Structural, surface morphological, optical and thermoelectric properties of sol–gel spin coated Zn doped CdS thin films

The deposition of thin films of cadmium zinc sulfide Cd1−x Zn x S at 250 °C from spin-coated xanthato complexes: a potential route to window layers for photovoltaic cells

Study the Effect of Deposition Time on Optical Properties of CdZnS Nanofilms

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