Influence of Deposition Time on Properties of the RF Sputtered TiO₂ Thin Films

Abstract

TiO2 films were prepared using radio frequency (RF) magnetron sputtering and were deposited on glass and Si substrates. We varied deposition time at room temperature with RF density of 3.7 W/cm2 and argon flow rate of 4 sccm. The morphological, structural, optical and electrical properties were studied by Atomic Force Microscope (AFM), X ray Diffractometer (XRD) and UV-VIS-NIR spectrophotometer. The transmittance is maintained in the range of 70- 90% in the visible and near-infrared range, high refractive index of 2.4 and large direct band gap of about 3.5 eV are obtained. These films are annealed at 300°C during 2 hours. The annealing effect is investigated in this work. The results of this study suggest that the variation of the deposition time allow the control of the structural, optical and electrical properties of the films.

Study of composite TiN/Ag/Cu2O/TiO2 with improved photocatalytic performance

“…Since the photocatalytic properties of titanium dioxide (TiO 2 ) were reported by Fujishima and Honda in 1972 [1,2], TiO 2 has attracted considerable attention [1] due to its excellent properties. They include excellent optical transmittance, high refractive index, high dielectric constant, chemical stability, better adhesion as well as photocatalytic performance, which give TiO 2 prospects for potential application in optical coating and self-cleaning [3]. Although it posses many superior properties, the industrial application of TiO 2 has made slow progress because of its polymorphic nature.…”