Influence of device structures on carrier recombination in GaAsSb/GaAs QW lasers

Hossain, Nadir; Hild, K.; Jin, S. R.; Sweeney, S. J.; Yu, S. Q.; Johnson, Shane; Ding, D.; Yh, Zhang

doi:10.1109/pgc.2010.5706061

Cited by 2 publications

(3 citation statements)

References 12 publications

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“…Two ternary material systems that have been extensively investigated in thin-film devices operating at these wavelengths are GaAsSb [1][2][3] and InGaAs [4,5]. The GaAsSb (III-V-V) system offers distinct advantages over InGaAs (III-III-V) due to (a) suppressed Auger recombination, (b) longer electron lifetime, and (c) less dependency of the electronic structure on its alloy configuration due to the presence of a single group III element [6].…”

Section: Introductionmentioning

confidence: 99%

Bandgap tuning of GaAs/GaAsSb core-shell nanowires grown by molecular beam epitaxy

Kasanaboina

Ojha

Sami

et al. 2015

Semicond. Sci. Technol.

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Semiconductor nanowires have been identified as a viable technology for next-generation infrared (IR) photodetectors with improved detectivity and detection across a range of energies as well as for novel single-photon detection in quantum networking. The GaAsSb materials system is especially promising in the 1.3-1.55 μm spectral range. In this work we present bandgap tuning up to 1.3 μm in GaAs/GaAsSb core-shell nanowires, by varying the Sb content using Ga-assisted molecular beam epitaxy. An increase in Sb content leads to strain accumulation in shell manifesting in rough surface morphology, multifaceted growths, curved nanowires, and deterioration in the microstructural and optical quality of the nanowires. The presence of multiple PL peaks for Sb compositions 12 at.% and degradation in the nanowire quality as attested by broadening of Raman and x-ray diffraction peaks reveal compositional instability in the nanowires. Transmission electron microscope (TEM) images show the presence of stacking faults and twins. Based on photoluminescence (PL) peak energies and their excitation power dependence behavior, an energy-band diagram for GaAs/GaAsSb core-shell nanowires is proposed. Optical transitions are dominated by type II transitions at lower Sb compositions and a combination of type I and type II transitions for compositions 12 at.%. Type I optical transitions as low as 0.93 eV (1.3 μm) from the GaAsSb for Sb composition of 26 at.% have been observed. The PL spectrum of a single nanowire is replicated in the ensemble nanowires, demonstrating good compositional homogeneity of the latter. A double-shell configuration for passivation of deleterious surface states leads to significant enhancement in the PL intensity resulting in the observation of room temperature emission, which provides significant potential for further improvement with important implications for nanostructured optoelectronic devices operating in the near-infrared regime.

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Section: Introductionmentioning

confidence: 99%

Bandgap tuning of GaAs/GaAsSb core-shell nanowires grown by molecular beam epitaxy

Kasanaboina

Ojha

Sami

et al. 2015

Semicond. Sci. Technol.

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“…[11][12][13] However, the optimization of the growth conditions to grow highquality GaAs 1Àx Sb x /GaAs (x ¼ 0.3 necessary for $1.3 lm emission) QW active material is one of the major challenges to make this material system commercially viable. [14][15][16] The aim of this letter is to compare device characteristics of GaAs 1Àx Sb x /GaAs QW lasers to aid in the design and optimization of GaAsSb/GaAs-based edge-emitting lasers and VCSELs.…”

mentioning

confidence: 99%

“…J th for devices A and B increase by $27% and $44%, respectively, up to 7 kbar at RT suggesting the presence of carrier leakage in these devices as observed earlier in similar devices. 1,15,16 The lower rate of increase in J th with pressure in device A compared to device B may be due to the higher growth temperature of device A, which increases Sb segregation and thus the concentration of defects. The fact that J th for device A has a stronger temperature dependence but weaker pressure dependence indicates the presence of defects which are shallow and therefore not pressure dependent.…”

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confidence: 99%

The influence of growth conditions on carrier recombination mechanisms in 1.3 μm GaAsSb/GaAs quantum well lasers

Hossain

Hild

Jin

et al. 2013

Applied Physics Letters

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We investigate the temperature and pressure dependence of the threshold current density of edge-emitting GaAsSb/GaAs quantum well (QW) lasers with different device characteristics. Thermally activated carrier leakage via defects is found to be very sensitive to the growth conditions of GaAsSb QWs. An optimization of the growth conditions reduces the nonradiative recombination mechanisms from 93% to 76% at room temperature. This improvement in carrier recombination mechanisms leads to a large improvement in the threshold current density from 533 Acm−2/QW to 138 Acm−2/QW and the characteristic temperature, T0 (T1), from 51 ± 5 K (104 ± 16 K) to 62 ± 2 K (138 ± 7 K) near room temperature.

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Influence of device structures on carrier recombination in GaAsSb/GaAs QW lasers

Cited by 2 publications

References 12 publications

Bandgap tuning of GaAs/GaAsSb core-shell nanowires grown by molecular beam epitaxy

Bandgap tuning of GaAs/GaAsSb core-shell nanowires grown by molecular beam epitaxy

The influence of growth conditions on carrier recombination mechanisms in 1.3 μm GaAsSb/GaAs quantum well lasers

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