Influence of Die Attach Layer on Thermal Performance of High Power Light Emitting Diodes

Yan, Bohan; You, Jiun Pyng; Tran, Ngoc Nguyen; He, Yongzhi; Shi, Frank G.

doi:10.1109/tcapt.2009.2032097

Cited by 33 publications

(16 citation statements)

References 12 publications

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“…Good agreement between simulation and experimental data was achieved using a die-attach thermal conductivity of 40 W/(m K). This value is within the range of solder thermal conductivity (20-60 W/(m K)) that can be found in literature [16][17][18][19], with the difference that our value was extracted using Raman thermography which is more accurate than the often used electrical method to determine device temperature which does not measure peak device temperature [20]. Therefore, it is worthwhile to take advantage from this accurately validated model to extract the temperature drop in each layer and their contribution to the overall thermal resistance of the packaged device.…”

Section: Bare Silver Diamond Composite Base Platessupporting

confidence: 85%

Improved thermal management for GaN power electronics: Silver diamond composite packages

Faqir

Batten

Mrotzek

et al. 2012

Microelectronics Reliability

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Section: Bare Silver Diamond Composite Base Platessupporting

confidence: 85%

Improved thermal management for GaN power electronics: Silver diamond composite packages

Faqir

Batten

Mrotzek

et al. 2012

Microelectronics Reliability

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“…However, environmental protection with the use of lamps remains critical. Lamp research and development (R&D) has used scientific and technological advancements to enhance the semiconductor components of light-emitting diodes (LEDs), including their high brightness, long life, low energy consumption, low pollution, lightness, and durability, while considering the importance of environmental protection [9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

“…9 3 LED arrays of Al 2 O 3 substrate combined with distribution of thermal stress effect of heat sink at 1W-h c = 25 W m -2 K -1…”

mentioning

confidence: 99%

Effect of heat convection on the thermal and structure stress of high-power InGaN light-emitting diode

Hsu

Huang

2014

J Therm Anal Calorim

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In this study, two models are investigated:(1) the convection cooling of high-power indium-galliumnitride light-emitting diodes (LEDs) and (2) the effects of thermal stress distribution. The first model chip (model A) has power of 1 and 3 W and dimensions of 1 mm 9 1 mm 9 0.005 mm, whereas the second model chip (model B) has power of 6 and 10 W and dimensions of 1.8 mm 9 1.8 mm 9 0.005 mm. The results of an analysis of natural convection, forced cooling, and thermal stress are compared with 1, 3, 6, and 10 W thermal specification data. High heat conductivity Al 2 O 3 material used as a printed circuit board (PCB) facilitates the heat conduction and thermal cooling of high-power LEDs and thus increases the strength of the structure. This LED structure model is used in full-scale packaging structures. The wire bonding convection cooling and effect of thermal stress distribution of this packaging design are investigated. We simulate thermal performance and effect of thermal stress distribution of the LEDs using a finite element method with ANSYS software. Heat transfer is coupled with heat conduction, heat convection, and thermal radiation, with the distribution of thermal stress equivalent to that of the von Mises criterion stress. LED is attached to a silicon substrate by wire bonding; the die bond material used is epoxy. LED packaging material is important. If the LED lighting power is fixed, it can increase the convection cooling coefficient, decreases the T j temperature, and the distribution of structural stress. The T j temperature is stable when the heat transfer coefficient had a critical or optimal value. Thermal cooling performance and overall structural strength can be improved when the LED is mounted on the Al 2 O 3 PCB material and heat sink. The models are employed accurately to determine the heat transfer effect, structural strength, life span, performance enhancement, and efficiency.

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“…The results showed that both the junction temperature and the junction-to-board thermal resistance were greatly affected by the thermal conductivity of die attach materials, the die attach layer area and the bond-line thickness [11]. Zhang et al focused on the thermal fatigue characteristics of die attach materials for packaged high power LEDs and found that Au80Sn20 eutectic possesses a longer thermal fatigue life than silver paste at the same temperature difference of thermal fatigue stress [12][13].…”

Section: Introductionmentioning

confidence: 99%

Effect of die-attach materials and thickness on the reliability of HP-LED

Weng

Song

Zhang

et al. 2013

2013 14th International Conference on Electronic Packaging Technology

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Different materials and thickness of die-attach layers can directly affect the heat dissipation of LED devices, so the influencing mechanism of interconnect materials and thickness to the thermal performances and optical durability were studied respectively. In the experiments, chip-on-board LED devices interconnected by gold-tin(Au80Sn20), solder paste and silver paste were prepared and evaluated respectively in terms of thermal resistance and reliability under wet and temperature life test. First, finite element analysis software ANSYS was used to simulate the influence of the die-attach layer's thermal conductivity and the thickness on the junction temperature. The results show the junction temperature becomes lower when the thermal conductivity of the interconnect layers become higher and the thickness become thinner. At the same time, the thermal stress of different die-attach layers were simulated. By the thermal resistance test with the T3Ster instrument, it was found that the thermal resistance of the Au80Sn20 interconnected LED device was the lowest. Finally, 12 pieces of LED devices of each die-attach material packaged HP-LED were selected and aged in 55 /55% RH condition for 2200 hours. The HP-LED interconnected by Au80Sn20 got the highest luminous flux durability. During the aging period, the change of the thermal resistance of LED device interconnected by sliver paste was more obvious than those interconnected by Au80Sn20 and solder paste.

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Influence of Die Attach Layer on Thermal Performance of High Power Light Emitting Diodes

Cited by 33 publications

References 12 publications

Improved thermal management for GaN power electronics: Silver diamond composite packages

Improved thermal management for GaN power electronics: Silver diamond composite packages

Effect of heat convection on the thermal and structure stress of high-power InGaN light-emitting diode

Effect of die-attach materials and thickness on the reliability of HP-LED

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