International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1995
DOI: 10.1117/12.226212
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Influence of different diode parameters on the accuracy of facet temperature measurements by means of Raman microspectroscopy

Abstract: The facet heating ofGaAlAs/GaAs DQW high power laser diodes is one ofthe main processes for fast degradation and cathastrophical optical damage in the near ofthe laser mirrors. This local heating is caused by nonradiative recombination ofthe injected carriers and by optical absorption near the cleaved or coated facets. The Stokes and anti-Stokes lines have been measured by excitation with an Ar Ion laser by high local resolution ofabout 1tm and a accuracy of the beam position of 0. 5 xm. The facet temperature … Show more

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