Influence of distributed trap states on the characteristics of top and bottom contact organic field-effect transistors

Lindner, Th.; Paasch, G.; Scheinert, S.

doi:10.1557/jmr.2004.0265

Cited by 28 publications

(19 citation statements)

References 37 publications

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“…For the temperature dependency of parameters in a device, more complicated models such as variable-range hopping are preferred [12]. The experimental results support well the application of the trapping model for dc analysis of organic devices at a constant temperature [13,14]. In the present work, we have used the MTR model to analyze a device behavior at constant temperature assuming that the semiconductor has an amorphous structure with different distribution of localized states (a polymer film).…”

Section: Drain Current and Subthreshold Swingsupporting

confidence: 60%

Study the effect of distribution of density of states on the subthreshold characteristics of an organic field-effect transistor (OFET)

Takshi

Madden

2010

J Comput Electron

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In the existing theory for organic field-effect transistors (OFETs) the effect of molecular order on the subthreshold characteristics is ignored. This effect is studied analytically through the potential profile and subthreshold swing at a weak accumulation mode. The developed theory predicts a wide accumulation region and a low subthreshold swing for a poorly ordered semiconductor. Simulation of transistors with various distributions of density of states is performed to mimic OFETs made of regioregular-Poly 3 hexylthiophene (rr-P3HT). The simulation results support the analytical equation for the potential profile. Furthermore, the effect of molecular order on the subthreshold swing matches with the theory. However, the analytical value for the subthreshold swing is greatly underestimated mainly due to an oversimplified model used for mobility.

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Section: Drain Current and Subthreshold Swingsupporting

confidence: 60%

Study the effect of distribution of density of states on the subthreshold characteristics of an organic field-effect transistor (OFET)

Takshi

Madden

2010

J Comput Electron

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“…[94] Device modeling has been used to understand the subthreshold characteristics of OFETs. [95] Based on an analysis of the relationship between the current decay at the early stages after FET turn-on and the hole concentration in the channel, Street et al have suggested that charge trapping occurs due to formation of low-mobility bipolarons by reaction of two polarons. [93,96] However, Deng et al…”

Section: Degradation Mechanisms Causing Thresholdvoltage Instabilitiesmentioning

confidence: 99%

Device Physics of Solution‐Processed Organic Field‐Effect Transistors

2005

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Field‐effect transistors based on solution‐processible organic semiconductors have experienced impressive improvements in both performance and reliability in recent years, and printing‐based manufacturing processes for integrated transistor circuits are being developed to realize low‐cost, large‐area electronic products on flexible substrates. This article reviews the materials, charge‐transport, and device physics of solution‐processed organic field‐effect transistors, focusing in particular on the physics of the active semiconductor/dielectric interface. Issues such as the relationship between microstructure and charge transport, the critical role of the gate dielectric, the influence of polaronic relaxation and disorder effects on charge transport, charge‐injection mechanisms, and the current understanding of mechanisms for charge trapping are reviewed. Many interesting questions on how the molecular and electronic structures and the presence of defects at organic/organic heterointerfaces influence the device performance and stability remain to be explored.

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“…This is much easier than calculation using simulators, 19,64,65 In the DBTTF transistors (Fig. 4), the onset voltage V on is shifted by 15, 35, and 80 V for PS, HMDS, and bare transistors, respectively.…”

Section: Simulationmentioning

confidence: 99%

Analysing organic transistors based on interface approximation

Akiyama

Mori

2014

AIP Advances

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Temperature-dependent characteristics of organic transistors are analysed thoroughly using interface approximation. In contrast to amorphous silicon transistors, it is characteristic of organic transistors that the accumulation layer is concentrated on the first monolayer, and it is appropriate to consider interface charge rather than band bending. On the basis of this model, observed characteristics of hexamethylenetetrathiafulvalene (HMTTF) and dibenzotetrathiafulvalene (DBTTF) transistors with various surface treatments are analysed, and the trap distribution is extracted. In turn, starting from a simple exponential distribution, we can reproduce the temperature-dependent transistor characteristics as well as the gate voltage dependence of the activation energy, so we can investigate various aspects of organic transistors self-consistently under the interface approximation. Small deviation from such an ideal transistor operation is discussed assuming the presence of an energetically discrete trap level, which leads to a hump in the transfer characteristics. The contact resistance is estimated by measuring the transfer characteristics up to the linear region.

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Influence of distributed trap states on the characteristics of top and bottom contact organic field-effect transistors

Cited by 28 publications

References 37 publications

Study the effect of distribution of density of states on the subthreshold characteristics of an organic field-effect transistor (OFET)

Study the effect of distribution of density of states on the subthreshold characteristics of an organic field-effect transistor (OFET)

Device Physics of Solution‐Processed Organic Field‐Effect Transistors

Analysing organic transistors based on interface approximation

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