2010
DOI: 10.1016/j.optmat.2009.12.005
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Influence of doping concentrations on the aluminum doped zinc oxide thin films properties for ultraviolet photoconductive sensor applications

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Cited by 162 publications
(86 citation statements)
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“…7b the amplitude of the photocurrent increases steadily from undoped ZnO to the AZO film with 2 at.% Al, going from 21 A to 58 A at 1.0 V in agreement with previous reports [36,42] . AZO films have excess carrier concentration due to ionization of donor in the thin film, which enhanced the n-type conductivity of the thin films.…”
Section: Figsupporting
confidence: 92%
“…7b the amplitude of the photocurrent increases steadily from undoped ZnO to the AZO film with 2 at.% Al, going from 21 A to 58 A at 1.0 V in agreement with previous reports [36,42] . AZO films have excess carrier concentration due to ionization of donor in the thin film, which enhanced the n-type conductivity of the thin films.…”
Section: Figsupporting
confidence: 92%
“…12,89,90 To test this hypothesis we have performed a (semi)-quantitative analysis by 27 Al MAS NMR. With an increasing doping percentage of aluminium (1.0, 1.8 and 4.9 mol%), there are no significant changes in the crystalline component Al (IV) A of AZO nanoparticles.…”
Section: H Andmentioning
confidence: 99%
“…These results suggest a decrease of crystallinity on substitution of Al ions at Zn 2+ site. 16,17 In addition, (006) peak of b-Al 2 O 3 was also observed above 20 mol.% Al concentration (JCPDS 10-0414). Excess Al ions formed b-Al 2 O 3 , which is regarded as a reason for the rough surface.…”
Section: Al-doped Zno Film Without Citrate Ionsmentioning
confidence: 95%