Influence of Doping Level on Brillouin Oscillations in GaAs

Abstract

Time-domain Brillouin scattering has proved to be a unique tool for determining depth dependent material properties. Here, we show the influence of doping level in GaAs on Brillouin oscillations.Measurements were performed on intrinsic, n-type and p-type GaAs samples. The results show high sensitivity of the amplitude of Brillouin oscillations to the doping concentration. The theoretical calculations are in a good agreement with the experimental data. This work provides an insight into the specific dopant profiling as a function of depth.