Influence of doping on gain characteristics of GaInNAs/GaAs quantum well lasers

Abstract

We investigate the effect of doping on the parameters of transparency carrier density and peak gain of GaInNAs/GaAs quantum well lasers emitting at 1.3 µm and compare the results with that of an equivalent nitrogen-free InGaAs/GaAs structure. A significant reduction in the transparency carrier density by p-type doping and an increase in gain by n-type doping are observed for GaInNAs/GaAs contrary to nitrogen-free InGaAs/GaAs. The results are analysed using the band-anti-crossing model for band gap, effective mass and simple approximate expressions for carrier density and optical gain. Our calculations show that doped III-N-V quantum well active layers may have certain benefits to lasers.

A theoretical comparison of the pressure dependence of the threshold current of phosphorus-, aluminium- and nitrogen-based 1.3 µm lasers

“…The majority of the discovered fundamental physical properties of the III-N-V alloy systems can be referred to as unusual and fascinating due to the strong increase of the electron effective mass with decreasing bandgap energy (increasing nitrogen composition). We have shown [23] previously that the type of doping also has an opposite effect on nitride systems compared to an equivalent nitride-free system. This is another unusual physical property of III-N-V alloys due to the nitrogen-induced modifications of the CB structure.…”