Influence of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with recessed anode

Zhong, Jiaming; Yao, Yao; Zheng, Yue; Yang, Fan; Ni, Yiqiang; He, Zhiyuan; Shen, Zhen; Zhou, Guocheng; Zhou, Davis B.; Wu, Zhisheng; Zhang, Baijun; Liu, Yang

doi:10.1088/1674-1056/24/9/097303

Cited by 9 publications

(5 citation statements)

References 15 publications

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“…15) The influence of dry-etching damage on the electrical properties of an AlGaN=GaN Schottky barrier diodes (SBD) with recessed anode has recently been reported. 16) In this work, we used DLTS to demonstrate that the AlGaN etching induces electron traps in GaN channel of AlGaN=GaN SBD.…”

Section: Introductionmentioning

confidence: 99%

Ion-assisted gate recess process induced damage in GaN channel of AlGaN/GaN Schottky barrier diodes studied by deep level transient spectroscopy

Ferrandis

Charles

Baines

et al. 2017

Jpn. J. Appl. Phys.

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International audienceDeep traps in AlGaN/GaN Schottky barrier diodes have been investigated using deep level transient spectroscopy. It has been found that ion-assisted gate recess process leads to the formation of electron traps. The defects related to these traps are mainly located in the two-dimensional electron gas channel below the Schottky contact, meaning that the partial etching of the AlGaN layer produces damage on the top of the underlying GaN layer. The activation energies of the electron traps, extracted from the data, range between 0.28 and 0.41 eV. We believe that these centers are complexes linked with nitrogen vacancies which may behave as extended defects

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Section: Introductionmentioning

confidence: 99%

Ion-assisted gate recess process induced damage in GaN channel of AlGaN/GaN Schottky barrier diodes studied by deep level transient spectroscopy

Ferrandis

Charles

Baines

et al. 2017

Jpn. J. Appl. Phys.

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“…This hypothesis is coherent with the point nature of the defect shown in Figure 5a as well as finding them in Pd/Au [33] and TiN (studied samples) Schottky contacts. In addition, it was only found in the LV 237 V, which has a higher RF bias during etching than LV 90 V, and this increased RF bias is likely to create more nitrogen vacancies [56]. By contrast, Tanaka et al in [57] and Arehart et al [58] found a trap at 0.4 eV (without a reported cross-section).…”

Section: Discussionmentioning

confidence: 92%

Deep Level Transient Fourier Spectroscopy Investigation of Electron Traps on AlGaN/GaN-on-Si Power Diodes

et al. 2023

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Many kinds of defects are present in AlGaN/GaN-on-Si based power electronics devices. Their identification is the first step to understand and improve device performance. Electron traps are investigated in AlGaN/GaN-on-Si power diodes using deep level transient Fourier spectroscopy (DLTFS) at different bias conditions for two Schottky contact’s etching recipes. This study reveals seven different traps corresponding to point defects. Their energy level ET ranged from 0.4 eV to 0.57 eV below the conduction band. Among them, two new traps are reported and are etching-related: D3 (ET = 0.47–0.48 eV; σ ≈ 10−15 cm2) and D7 (ET = 0.57 eV; σ = 4.45 × 10−12 cm2). The possible origin of the other traps are discussed with respect to the GaN literature. They are proposed to be related to carbon and nitrogen vacancies or to carbon, such as CN-CGa. Some others are likely due to crystal surface recombination, native defects or a related complex, or to the nitrogen antisite: NGa.

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“…The tunneling-enhanced recombination assisted by defects or traps in the bulk material or close to the junction interface can be expressed, respectively, as [17][18][19][20][21] n = E 00 kT coth E 00 kT ,…”

Section: Resultsmentioning

confidence: 99%

Scalability of dark current in silicon PIN photodiode

Feng¹,

Li²,

Liu

et al. 2018

Chinese Phys. B

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The mechanism for electrical conduction is investigated by the dark temperature-dependent current-voltage characteristics of Si PIN photodiodes with different photosensitive areas. The characteristic tunneling energy E 00 can be obtained to be 1.40 meV, 1.53 meV, 1.74 meV, 1.87 meV, and 2.01 meV, respectively, for the photodiodes with L = 0.25 mm, 0.5 mm, 1 mm, 1.5 mm, and 2 mm by fitting the ideality factor n versus temperature curves according to the tunneling-enhanced recombination mechanism. The trap-assisted tunneling-enhanced recombination in the i-layer plays an important role in our device, which is consistent with the experimental result that area-dependent leakage current is dominant with the side length larger than 1 mm of the photosensitive area. Our results reveal that the quality of the bulk material plays an important role in the electrical conduction mechanism of the devices with the side length larger than 1 mm of the photosensitive area.

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Influence of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with recessed anode

Cited by 9 publications

References 15 publications

Ion-assisted gate recess process induced damage in GaN channel of AlGaN/GaN Schottky barrier diodes studied by deep level transient spectroscopy

Ion-assisted gate recess process induced damage in GaN channel of AlGaN/GaN Schottky barrier diodes studied by deep level transient spectroscopy

Deep Level Transient Fourier Spectroscopy Investigation of Electron Traps on AlGaN/GaN-on-Si Power Diodes

Scalability of dark current in silicon PIN photodiode

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