Influence of electrodes' distance upon properties of intrinsic and doped amorphous silicon films for heterojunction solar cells

Brinkmann, Nils; Gorgulla, Angelika; Bauer, Anja; Skorka, Daniel; Micard, Gabriel; Hahn, Giso; Terheiden, Barbara

doi:10.1002/pssa.201330343

Cited by 4 publications

(3 citation statements)

References 26 publications

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“…subtracting the Drude term, has to be carried out. The intensity of an interesting bandwidth of wavenumbers (ω) can be calculated by integrating [35]. Langford et al described a method and gave coefficients to calculate the Si H (2000 cm Hydrogen bond structures of RFSD a Si layers are analyzed in the de scribed way by using a "Bruker IFS 113v" and a "Bruker Vertex 80" spectrometer.…”

Section: Hydrogen Depth Profiling and Bonding Structuresmentioning

confidence: 99%

Influence of post-hydrogenation upon electrical, optical and structural properties of hydrogen-less sputter-deposited amorphous silicon

Gerke

Becker²,

Rogalla³

et al. 2016

Thin Solid Films

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a b s t r a c t a r t i c l e i n f oAmorphous silicon (a Si) is common in the production of technical devices and can be deposited by several techniques. In this study intrinsic and doped, hydrogen less amorphous silicon films are RF magnetron sputter deposited and post hydrogenated in a remote hydrogen plasma reactor at a temperature of 370°C. Secondary ion mass spectrometry of a boron doped (p) a Si layer shows that the concentration of dopants in the sputtered layer becomes the same as present in the sputter target. Improved surface passivation of phosphorous doped 5 Ω cm, FZ, (n) c Si can be achieved by post hydrogenation yielding a minority carrier lifetime of~360 μs finding an optimum for~40 nm thin films, deposited at 325°C. This relatively low minority carrier lifetime indicates high disorder of the hydrogen less sputter deposited amorphous network. Post hydrogenation leads to a decrease of the number of localized states within the band gap. Optical band gaps (Taucs gab as well as E 04 ) can be determined to~1.88 eV after post hydrogenation. High resolution transmission electron microscopy and optical Raman investigations show that the sputtered layers are amorphous and stay like this during post hydrogenation. As a consequence of the missing hydrogen during deposition, sputtered a Si forms a rough surface compared to CVD a Si. Atomic force microscopy points out that the roughness decreases by up to 25% during post hydrogenation. Nuclear resonant reaction analysis permits the investigation of hydrogen depth profiles and allows determining the diffusion coefficients of several post hydrogenated samples from of a model developed within this work. A dependency of diffusion coefficients on the duration of post hydrogenation indicates trapping diffusion as the main diffusion mechanism. Additional Fourier transform infrared spectroscopy measurements show that hardly any interstitial hydrogen exists in the post hydrogenated a Si layers. The results of this study open the way for further hydrogen diffusion experiments which require an initially unhydrogenated drain layer.

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Section: Hydrogen Depth Profiling and Bonding Structuresmentioning

confidence: 99%

Influence of post-hydrogenation upon electrical, optical and structural properties of hydrogen-less sputter-deposited amorphous silicon

Gerke

Becker²,

Rogalla³

et al. 2016

Thin Solid Films

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“…As mentioned in [12], it is recommended to obtain a baseline correction of the FTIR data, i.e. subtracting the Drude term, before calculating Į eff .…”

Section: Fourier Transform Infrared Spectroscopymentioning

confidence: 99%

“…The intensity (I Ȧ ) of an interesting bandwidth of wavenumbers (Ȧ) can be calculated by integrating, Eq. (3) [12]. Langford et al described a method and gave coefficients to calculate the Si-H (2000 cm -1 ) and Si-H 2 (2090 cm -1 ) bond densities and therefore the sum (N H ) of these Si-H x bonds, according to Eq.…”

Section: Fourier Transform Infrared Spectroscopymentioning

confidence: 99%

Model based prediction of the trap limited diffusion of hydrogen in post‐hydrogenated amorphous silicon

Gerke

Becker²,

Rogalla³

et al. 2016

Physica Rapid Research Ltrs

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The diffusion of hydrogen within an hydrogenated amorphous silicon (a‐Si:H) layer is based on a trap limited process. Therefore, the diffusion becomes a self‐limiting process with a decreasing diffusion velocity for increasing hydrogen content. In consequence, there is a strong demand for accurate experimental determination of the hydrogen distribution. Nuclear resonant reaction analysis (NRRA) offers the possibility of a non‐destructive measurement of the hydrogen distribution in condensed matter like a‐Si:H thin films. However, the availability of a particle accelerator for NRR‐analysis is limited and the related costs are high. In comparison, Fourier transform infrared spectroscopy (FTIR) is also a common method to determine the total hydrogen content of an a‐Si:H layer. FTIR spectrometers are practical table‐top units but lack spatial resolution. In this study, an approach is discussed that greatly reduces the need for complex and expensive NRR‐analysis. A model based prediction of hydrogen depth profiles based on a single NRRA measurement and further FTIR measurements enables to investigate the trap limited hydrogen diffusion within a‐Si:H. The model is validated by hydrogen diffusion experiments during the post‐hydrogenation of hydrogen‐free sputtered a‐Si. The model based prediction of hydrogen depth profiles in a‐Si:H allows more precise design of experiments, prevents misinterpretations, avoids unnecessary NRRA measurements and thus saves time and expense. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)

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Morphology and Hydrogen in Passivating Amorphous Silicon Layers

et al. 2015

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Influence of electrodes' distance upon properties of intrinsic and doped amorphous silicon films for heterojunction solar cells

Cited by 4 publications

References 26 publications

Influence of post-hydrogenation upon electrical, optical and structural properties of hydrogen-less sputter-deposited amorphous silicon

Influence of post-hydrogenation upon electrical, optical and structural properties of hydrogen-less sputter-deposited amorphous silicon

Model based prediction of the trap limited diffusion of hydrogen in post‐hydrogenated amorphous silicon

Morphology and Hydrogen in Passivating Amorphous Silicon Layers

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