Influence of electrolyte selection on performance of tantalum anodic oxide memristors

Impact of Electrolyte Incorporation in Anodized Niobium on Its Resistive Switching

“…Additionally, it can be inferred that oxides formed in CB are more uniform and compact than those formed in PB due to the fact that P requires more space, likely randomizing the position of neighboring atoms or molecules. A similar trend was observed in recently studied amorphous Ta oxide growing in PB and CB and having the same stoichiometry of the oxide as in the current work [ 24 ]. Therefore, the selection of the electrolyte may be relevant regarding the electrical characteristics of memristors due to the compositional homogeneity and compactness of the samples grown in different buffers.…”

“…The anodic oxide grown in CB appeared more compact and uniform, thus increasing the probability of more concurrent CF formation during the electroforming process, responsible for the switching at more resistive levels. In a previous study, the CF pinning was dictated by the P incorporation forming a new substance in oxide [ 24 ]. Nevertheless, the size of P and its atomic interactions may prevent the formation of a high number of fully developed (i.e., connecting both electrodes) concurrent CFs.…”

“…Electrolyte solutions were prepared following standard preparation protocols [ 32 ] by mixing high-purity reagents (Na 2 HPO 4 , NaH 2 PO 4 , C 6 H 9 Na 3 O 9 , C 6 H 8 O 7 ; Merck KGaA, Darmstadt, Germany) with ultrapure water (Arium mini, Sartorius, Göttingen, Germany). Commonly applied potentiostatic steps, performed at final potential values used during potentiodynamic anodizations, were skipped in this study for increasing the probabilities for defect formation and electrolyte incorporation, consequently [ 24 , 25 , 33 ].…”

“…The fabricated memristors are expected to have different behaviors given their active layers based on Nb 2 O 5 [ 17 , 19 ], likely enriched with electrolyte species, as analyzed by both HAXPES and XPS. The study was motivated by the previous reports investigating the effect of tuning electrochemical parameters on anodic oxide growth [ 20 , 21 , 22 , 23 ] or memristive behavior, confirming the influence of electrolyte selection as the most relevant [ 24 , 25 ]. Since unipolar devices can be used for dense integration on diode selectors and bipolar ones show higher device lifetime [ 14 ], the controllable switching of the Nb anodic oxide memristors may be beneficial regarding the range of their possible applications [ 1 , 26 , 27 , 28 , 29 ].…”

Topochemical Synthesis of Copper Phosphide Nanoribbons for Flexible Optoelectronic Memristors

“…It is reported that the native oxidization shells of semiconductor films can serve as the charge trapping layer to enhance the resistance switching characteristics of memristors. [ 51,52 ] In this case, the surface oxidization of the aged Cu 3 P NRs easily leads to copper phosphate, which can promote the localization [ 53 ] and spatial pinning [ 54 ] of CFs during read/write cycles. Since the spatial pinning decreases the probability of the irreversible CFs rupture and leads to the enhancement of retention and uniformity, the aging Cu 3 P NRs‐based memristor provides the better performance.…”