Influence of electron and proton irradiation on the electronic properties of microcrystalline silicon

Brüggemann, R.; Kleider, Jean‐Paul; Bronner, W.; Zrinscak, I.

doi:10.1016/s0022-3093(01)00971-1

Cited by 4 publications

(3 citation statements)

References 12 publications

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“…High-energy protons above 100 MeV did not show any effect upon the optical and electronic properties in lc-Si:H [7]. Here, we investigate the effect of irradiation with 2-MeV protons, which have a larger damage impact than 100-MeV protons, and we report changes in the photoelectronic properties and the density of states (DOS).…”

Section: Introductionmentioning

confidence: 99%

Effects of proton irradiation on the photoelectronic properties of microcrystalline silicon

Brüggemann

Brehme

Kleider

et al. 2004

Journal of Non-Crystalline Solids

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Section: Introductionmentioning

confidence: 99%

Effects of proton irradiation on the photoelectronic properties of microcrystalline silicon

Brüggemann

Brehme

Kleider

et al. 2004

Journal of Non-Crystalline Solids

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“…For microcrystalline silicon, there had been only a few studies where the defect density was controllably varied by electron bombardment and subsequent annealing. [47][48][49][50] A systematic investigation of the relationship between defect density and photoconductivity in c-Si: H is, to our knowledge, missing so far.…”

Section: Introductionmentioning

confidence: 99%

Relationship between defect density and charge carrier transport in amorphous and microcrystalline silicon

et al. 2009

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The influence of dangling-bond defects and the position of the Fermi level on the charge carrier transport properties in undoped and phosphorous doped thin-film silicon with structure compositions all the way from highly crystalline to amorphous is investigated. The dangling-bond density is varied reproducibly over several orders of magnitude by electron bombardment and subsequent annealing. The defects are investigated by electron-spin-resonance and photoconductivity spectroscopies. Comparing intrinsic amorphous and microcrystalline silicon, it is found that the relationship between defect density and photoconductivity is different in both undoped materials, while a similar strong influence of the position of the Fermi level on photoconductivity via the charge carrier lifetime is found in the doped materials. The latter allows a quantitative determination of the value of the transport gap energy in microcrystalline silicon. The photoconductivity in intrinsic microcrystalline silicon is, on one hand, considerably less affected by the bombardment but, on the other hand, does not generally recover with annealing of the defects and is independent from the spin density which itself can be annealed back to the as-deposited level. For amorphous silicon and material prepared close to the crystalline growth regime, the results for nonequilibrium transport fit perfectly to a recombination model based on direct capture into neutral dangling bonds over a wide range of defect densities. For the heterogeneous microcrystalline silicon, this model fails completely. The application of photoconductivity spectroscopy in the constant photocurrent mode ͑CPM͒ is explored for the entire structure composition range over a wide variation in defect densities. For amorphous silicon previously reported linear correlation between the spin density and the subgap absorption is confirmed for defect densities below 10 18 cm −3 . Beyond this defect level, a sublinear relation is found i.e., not all spin-detected defects are also visible in the CPM spectra. Finally, the evaluation of CPM spectra in defect-rich microcrystalline silicon shows complete absence of any correlation between spindetected defects and subband gap absorption determined from CPM: a result which casts considerable doubt on the usefulness of this technique for the determination of defect densities in microcrystalline silicon. The result can be related to the inhomogeneous structure of microcrystalline silicon with its consequences on transport and recombination processes.

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“…Following early extensive studies on crystalline silicon [1] numerous recent reports on radiation effects in amorphous and microcrystalline silicon can be found in the literature, mainly using electron and proton beams [2][3][4], covering a wide energy range from a few keV to tens of MeV.…”

Section: Introductionmentioning

confidence: 99%

Radiation-induced defects in a-Si:H by 1.5MeV He4 particles studied by photoconductivity and photothermal deflection spectroscopy

Morgado

Schwarz

Braz

et al. 2006

Journal of Non-Crystalline Solids

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Influence of electron and proton irradiation on the electronic properties of microcrystalline silicon

Cited by 4 publications

References 12 publications

Effects of proton irradiation on the photoelectronic properties of microcrystalline silicon

Effects of proton irradiation on the photoelectronic properties of microcrystalline silicon

Relationship between defect density and charge carrier transport in amorphous and microcrystalline silicon

Radiation-induced defects in a-Si:H by 1.5MeV He4 particles studied by photoconductivity and photothermal deflection spectroscopy

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