Influence of electron beam irradiation on electrical, structural, magnetic and thermal properties of Pr0.8Sr0.2MnO3 manganites

Effects of low pressure plasma irradiation on electrical resistivity of perovskite oxide Eu 1-x Sr x MnO 3

“…The defects density depends upon the temperature and the recovery of the defects are responsible for the kinetics of amorphization. Similar studies were carried out by different authors to understand the effect of high energy electron beam [11,12]. They have shown that energy of the electron beam is a determinant factor in the variation of the bond angle and bond length.…”

Magnetic properties of La0.7Sr0.3MnO3 under the pressure and the transport property under the magnetic field

“…The values of ρ 0 , ρ 2 , ρ 3 , ρ 4.5 , and ρ 5 , obtained from the fitting, are listed in Table 2. Among them, the fitted ρ 2 and ρ 4.5 are the negative values, as reported before 80,81 . However, all parameters declined in the application of magnetic field, especially for ρ 2 , similar to that observed before, 80 indicating that the magnetic field reduces the scattering from the grain boundary, electron, phonon, and magnon, especially reduces the electron‐electron scattering.…”

“…In ferromagnetic materials, the resistivity in the metallic region below T c can be expressed by the following formula 52 : ρ ( T ) = ρ 0 + ρ 2 T 2 + ρ 3 T 3 + ρ 4.5 T 4.5 + ρ 5 T 5 , where ρ 0 is the residual resistivity, attributable to the scattering of grain boundaries 80 . As the polycrystalline sample contains numerous grains, grain boundaries contribute significantly to the resistivity 81 . The latter four terms are respectively contributed by the scattering from electron‐electron ( T 2 ), one‐magnon ( T 3 ), two‐magnon ( T 4.5 ), and electron‐phonon ( T 5 ).…”

“…80 As the polycrystalline sample contains numerous grains, grain boundaries contribute significantly to the resistivity. 81 The latter four terms are respectively contributed by the scattering from electron-electron (T 2 ), one-magnon (T 3 ), two-magnon (T 4.5 ), and electron-phonon (T 5 ). The resistivity in the temperature region of 5 K~100 K can be well fitted by the above expression, and the fitting result is shown in Figure 9.…”

Effect of E-Beams Irradiation Dose on the Sensing Properties of Pt-Functionalized Reduced Graphene Oxides Following Annealing of the 6 nm-Thick Pt Layer

“…Among the various irradiation methods, e-beams have recently been extensively studied as a means of preparing noble metal NPs [33], bimetallic NPs [34], and core-shell NPs [35], and have also been used to controllably introduce defects in order to modify materials' optical and electrical properties [36]. E-beams lose their energy when passing through materials due to interactions with atoms.…”