Influence of electron irradiation on electroluminescence of Cu(In,Ga)Se<sub>2</sub>solar cells

Kawakita, Shirou; Imaizumi, Mitsuru; Ishizuka, Shogo; Shibata, Hajime; Niki, Shigeru; Okuda, Shuichi; Kusawake, Hiroaki

doi:10.7567/jjap.53.05fw08

Cited by 9 publications

(4 citation statements)

References 19 publications

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“…The same behavior was observed by the light-soaking effect for CIGS solar cells [11], whereby 100 keV electrons also increased the electroluminescence (EL) intensity and improved the current-voltage characteristic similar to the case of light soaking [12]. Although 100 keV electrons cannot produce recoiled atoms, they generate electron-hole pairs in CIGS as light absorption, which suggests that the improvement mechanism is considered equivalent to that of the light-soaking effect for CIGS solar cells.…”

Section: Introductionsupporting

confidence: 57%

“…The rollover effect on LIV decreases with progressive irradiation up to a fluence of 1 × 10 16 cm −2 . This phenomenon is attributable to the change in the conduction-type of V Se − V Cu metastable defects, as in the case of the light-soaking effect [12]. However, the electric performance degrades for a fluence exceeding 3 × 10 16 cm −2 .…”

Section: Resultsmentioning

confidence: 99%

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Degradation of Cu(In, Ga)Se 2 thin-film solar cells due to the ionization effect of low-energy electrons

et al. 2015

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Section: Introductionsupporting

confidence: 57%

Section: Resultsmentioning

confidence: 99%

Degradation of Cu(In, Ga)Se 2 thin-film solar cells due to the ionization effect of low-energy electrons

et al. 2015

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“…Cu(In,Ga)Se 2 (CIGS) solar cells are potential candidates for bottom cells . Single-junction CIGS solar cells exhibit high efficiency (e.g., 23.35%), radiative hardness, − and long-term stability . Their band gap is controllable in the wide range of 1.0–1.7 eV by varying their compositional ratio of Ga to (Ga + In), which is referred to as Ga/III.…”

Section: Introductionmentioning

confidence: 99%

Efficient Narrow Band Gap Cu(In,Ga)Se₂ Solar Cells with Flat Surface

Kamikawa

Nishinaga

Shibata

et al. 2020

ACS Appl. Mater. Interfaces

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In this study, the influences of bromine-based etching (Br etching) of narrow band gap CuInSe 2 (CIS) absorbers and Cu(In,Ga)Se 2 absorbers with various single Ga gradings (CIS:Ga) on the properties of solar cells were investigated. Absorbers with narrow absorption edge energies (E abs ) of 1.0−1.02 eV, ideal for the application as a bottom cell in a tandem device, were fabricated using a modified three-stage process and subjected to Br etching. The evolution of surface flatness and their optical and electrical properties upon Br etching were investigated. Br etching typically reduced the root-mean-square deviation of the surface roughness height (R q ) for a CIS:Ga absorber from several hundreds to several tens of nanometers, whereas for some CIS absorbers, R q reduction was limited by the remaining voids. Moreover, Br etching reduced the leakage current across the pn junction. The high shunt resistances (R sh ) typically up to >10 kΩ•cm 2 were obtained by introduction of Br etching. However, etching sometimes adversely increased the V OC deficit. The investigation of the minority carrier lifetime and diode parameters revealed that backsurface recombination in CIS and low-Ga CIS:Ga solar cells increased as the absorber layer thickness decreased. A higher Ga grading significantly reduced back-surface recombination. Narrow band gap CIGS solar cells with improved surface flatness and high V OC were achieved by introducing Br etching and proper Ga grading.

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“…Finally, it should be remarked that a further emission at 0.77 eV was observed in samples with low V oc . This deep emission has been previously identified in irradiated CIGS samples [25], but not unequivocally attributed.…”

Section: Resultsmentioning

confidence: 59%

Fabricating Cu(In,Ga)Se₂solar cells on flexible substrates by a new roll-to-roll deposition system suitable for industrial applications

Binetti

Garattini

Mereu

et al. 2015

Semicond. Sci. Technol.

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In this work, a new hybrid sputtering-evaporation system providing a scalable process for deposition of Cu(In,Ga)Se 2 (CIGS) layers is presented. The growth apparatus has been designed and realized to fit a size suitable for direct industrial transfer. In this process the metal precursors are first of all sputtered on rotating transfer devices, then evaporated on the substrate by local heating in a Se atmosphere. The desired thickness and composition of the CIGS film are obtained by repeated sputtering-evaporation cycles. The cylindrical geometry of the deposition chamber has been designed to accommodate different types of flexible substrates with a maximum size of 20 × 120 cm 2 in a roll-to-roll configuration. Several techniques, including secondary ion mass spectrometry, Raman and photoluminescence spectroscopies, x-ray diffraction, scanning electron microscopy, external quantum efficiency, and I-V under 1 Sun illumination, have been used to test both the as-grown CIGS layers and the solar cell devices based on them. A significant performance and good control of Ga grading and Na content were obtained for solar cells grown at 450 °C on polyimide substrates with high deposition rates. In spite of the fact that the present efficiency record for CIGS solar cells on polyimide substrates is 20.4%, the 10.1% obtained using the hybrid method presented in this work is significant because the growth apparatus meets the requirements for direct industrial transfer. In fact, this process is being transferred in a 1 MW production line, where standard CIGS layers are deposited at low temperature on flexible substrates in a single-step process with a 1 mm sec −1 substrate velocity.

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Influence of electron irradiation on electroluminescence of Cu(In,Ga)Se₂solar cells

Cited by 9 publications

References 19 publications

Degradation of Cu(In, Ga)Se 2 thin-film solar cells due to the ionization effect of low-energy electrons

Degradation of Cu(In, Ga)Se 2 thin-film solar cells due to the ionization effect of low-energy electrons

Efficient Narrow Band Gap Cu(In,Ga)Se₂ Solar Cells with Flat Surface

Fabricating Cu(In,Ga)Se₂solar cells on flexible substrates by a new roll-to-roll deposition system suitable for industrial applications

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Influence of electron irradiation on electroluminescence of Cu(In,Ga)Se2solar cells

Cited by 9 publications

References 19 publications

Degradation of Cu(In, Ga)Se 2 thin-film solar cells due to the ionization effect of low-energy electrons

Degradation of Cu(In, Ga)Se 2 thin-film solar cells due to the ionization effect of low-energy electrons

Efficient Narrow Band Gap Cu(In,Ga)Se2 Solar Cells with Flat Surface

Fabricating Cu(In,Ga)Se2solar cells on flexible substrates by a new roll-to-roll deposition system suitable for industrial applications

Contact Info

Product

Resources

About

Influence of electron irradiation on electroluminescence of Cu(In,Ga)Se₂solar cells

Efficient Narrow Band Gap Cu(In,Ga)Se₂ Solar Cells with Flat Surface

Fabricating Cu(In,Ga)Se₂solar cells on flexible substrates by a new roll-to-roll deposition system suitable for industrial applications