Influence of electron scattering on phonon-plasmon coupled modes dispersion and free-electron absorption in n-doped GaN semiconductors at mid-IR wavelengths

Shkerdin, G. N.; Rabbaa, Sulaiman$AAUP$Palestinian; Stiens, Johan; Vounckx, R.

doi:10.1002/pssb.201350039

Cited by 9 publications

(4 citation statements)

References 30 publications

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“…If ωр and ω LO are close then the independent plasmons and longitudinal optical phonons which existed earlier are replaced by coupled plasmon-phonon modes [13][14][15][16][17][18][19][20][21][22][23][24][25][26] whose frequencies (where ω + is the high-frequency one and ωis the low-frequency one) can easily be calculated using the following formula (plasmon and LO phonon damping is disregarded):…”

Section: Methodsmentioning

confidence: 99%

Comparison between optical and electrophysical data on free electron concentration in tellurium doped n-GaAs

Yugova¹,

Белов²,

Kanevskii³

et al. 2020

MoEM

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A theoretical model has been developed for determining free electron concentration in n-GaAs from characteristic points in the far infrared region of reflection spectra. We show that when determining free electron concentration one should take into account the pasmon–phonon coupling, otherwise free electron concentration will be overestimated. We have calculated electron concentration Nopt as a function of characteristic wave number ν+ which is described by a second order polynomial. Twenty-five tellurium doped gallium arsenide specimens have been tested for electron concentration using two methods, i.e., the conventional four-probe method (Van der Pau) and the optical method developed by us (the measurements have been carried out at room temperature). We have used the experimental results to plot the dependence of electron concentration based on the Hall data (NHall) on electron concentration based on the optical data (Nopt). This dependence is described by a linear function. We show that the data of optical and electrophysical measurements agree if the electron concentration is Neq = 1.07 · 1018 cm-3. At lower Hall electron concentrations, NHall < Nopt, whereas at higher ones, NHall > Nopt. We have suggested a qualitative model describing these results. We assume that tellurium atoms associate into complexes with arsenic vacancies thus reducing the concentration of electrons. The concentration of arsenic vacancies is lower on the crystal surface, hence the Nopt > NHall condition should be met. With an increase in doping level, more and more tellurium atoms remain electrically active, so the bulk concentration of electrons starts to prevail over the surface one. However with further increase in doping level the NHall/Nopt ratio starts to decrease again and tends to unity. This seems to originate from the fact that the decomposition intensity of the tellurium atom + arsenic vacancy complexes decreases with an increase in doping level.

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Section: Methodsmentioning

confidence: 99%

Comparison between optical and electrophysical data on free electron concentration in tellurium doped n-GaAs

Yugova¹,

Белов²,

Kanevskii³

et al. 2020

MoEM

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“…The lower intensity of reflectivity can be found in Figure 3(b), where nanostructured film tends to have greater volume fraction of air. In the meantime, the spectra revealed a dip at approximately 620 cm -1 corresponds to the coupled phonon-plasmon mode arising from the impurity scattering happened at the lateral surface [22,23]. The obtained value was shifted from the reported longitudinal-optical (LO) phonon mode 590 cm -1 towards higher frequency.…”

Section: Resultsmentioning

confidence: 75%

Radio-Frequency Sputtering Growth of Indium Nitride Thin Film on Flexible Substrate

Lee

Osman

Fong

et al. 2016

MSF

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The study signifies the radio-frequency (RF) sputtering growth and characterizations of indium nitride (InN) thin films deposited on flexible substrates. A three-inch diameter indium (In) sputtering target with purity of 99.999% was used. The deposition was carried out at room temperature and with substrate temperature of 200 °C. The surface morphologies, structural and optical properties of the deposited thin films were examined by using field-emission scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction as well as Fourier transform infrared spectroscopy. All the results revealed that InN thin films have been successfully deposited on the flexible substrates in the gas mixture ambient of argon and nitrogen.

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“…N opt was calculated from far IR reflection spectra (plasma resonance) [2][3][4][5][6] taking into account the interaction of plasma oscillations with longitudinal optical phonons (the plasmon-phonon coupling) [7][8][9][10][11][12][13][14][15][16][17]. The wavenumber dependence of the reflection spectrum R(n) was recorded in the 340-1000 cm -1 spectral range with a Tensor-27 Fourier spectrometer.…”

Section: Methodsmentioning

confidence: 99%

Comparison between results of optical and electrical measurements of free electron concentration in n-InAs specimens

Yugova¹,

Белов²,

Kanevskii³

et al. 2021

MoEM

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A theoretical model has been developed for determining the free electron concentration in n-InAs specimens from characteristic points in far IR reflection spectra. We show that this determination requires plasmon-phonon coupling be taken into account, otherwise the measured electron concentration proves to be overestimated. A correlation between the electron concentration Nopt and the characteristic wavenumber ν+ has been calculated and proves to be well fit by a third order polynomial. The test specimens have been obtained by tin or sulfur doping of indium arsenide. The electron concentration in the specimens has been measured at room temperature using two methods: the optical method developed by the Authors (Nopt) and the conventional four-probe Hall method (the Van der Pau method, NHall). The reflecting surfaces of the specimens have been chemically polished or fine abrasive ground. The condition Nopt > NHall has been shown to hold for all the test specimens. The difference between the optical and the Hall electron concentrations is greater for specimens having polished reflecting surfaces. The experimental data have been compared with earlier data for n-GaAs. A qualitative model explaining the experimental data has been suggested.

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Influence of electron scattering on phonon-plasmon coupled modes dispersion and free-electron absorption in n-doped GaN semiconductors at mid-IR wavelengths

Cited by 9 publications

References 30 publications

Comparison between optical and electrophysical data on free electron concentration in tellurium doped n-GaAs

Comparison between optical and electrophysical data on free electron concentration in tellurium doped n-GaAs

Radio-Frequency Sputtering Growth of Indium Nitride Thin Film on Flexible Substrate

Comparison between results of optical and electrical measurements of free electron concentration in n-InAs specimens

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