2005
DOI: 10.1016/j.surfcoat.2005.02.182
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Influence of energetic ion bombardment on W-C:H coatings deposited with W and WC targets

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Cited by 33 publications
(22 citation statements)
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“…The total thickness of the a-C:H layer was 2.8 ± 0.2 m. The compressive residual stress of 0.9 ± 0.05 GPa was determined through substrate deflection before and after H-DLC film deposition on a pure Si wafer. Similar values for this type of coatings were put forward in [25,26]. …”
Section: Materials and Depositionsupporting
confidence: 68%
“…The total thickness of the a-C:H layer was 2.8 ± 0.2 m. The compressive residual stress of 0.9 ± 0.05 GPa was determined through substrate deflection before and after H-DLC film deposition on a pure Si wafer. Similar values for this type of coatings were put forward in [25,26]. …”
Section: Materials and Depositionsupporting
confidence: 68%
“…The range of measured values of the Young's modulus of the a-C:H:W variants of E = 80 − 253 GPa is in good agreement with those published by other authors (E = 92 − 143 GPa [11]; E = 140 − 240 GPa [5]). The same applies to the measured values of the indentation hardness in the range of H IT = 7.8 − 22.0 GPa.…”
Section: Young's Modulus and Indentation Hardnesssupporting
confidence: 91%
“…Even though the observed positive effect of the bias voltage on E and H IT was also reported by other authors [5,12,39], no full explanation has been provided yet. With respect to a-C:H:W coatings, the negative effect of the argon flow (C) on E an H IT has not yet been described in the literature.…”
Section: Effects Of the Bias Voltage And The Argon Flow Ratementioning
confidence: 58%
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