Influence of external contacting on electroluminescence and fill factor measurements

Höffler, Hannes; Haunschild, Jonas; Rein, Stefan

doi:10.1016/j.solmat.2016.03.039

Cited by 6 publications

(3 citation statements)

References 12 publications

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“…[6] However, this technique is not suitable for distinguishing R S defects from recombination defects (low minority carrier lifetime). [7] Because both of the defects show lower luminescence intensity in the EL images. Conventional open-circuit (OC) photoluminescence (PL) cannot detect R S defects [8,9] because of no lateral current flow existing.…”

Section: Introductionmentioning

confidence: 99%

Detection of finger interruptions in silicon solar cells using photoluminescence imaging

et al. 2018

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Finger interruptions are common problems in screen printed solar cells, resulting in poor performance in efficiency because of high effective series resistance. Electroluminescence (EL) imaging is typically used to identify interrupted fingers. In this paper, we demonstrate an alternative method based on photoluminescence (PL) imaging to identify local series resistance defects, with a particular focus on finger interruptions. Ability to detect finger interruptions by using PL imaging under current extraction is analyzed and verified. The influences of external bias control and illumination intensity on PL images are then studied in detail. Finally, in comparison with EL imaging, the using of PL imaging to identify finger interruptions possesses the prominent advantages: in PL images, regions affected by interrupted fingers show higher luminescence intensity, while regions affected by recombination defects show lower luminescence intensity. This inverse signal contrast allows PL imaging to more accurately identify the defect types.

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Section: Introductionmentioning

confidence: 99%

Detection of finger interruptions in silicon solar cells using photoluminescence imaging

et al. 2018

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“…Current-Voltage (I-V) measurements and electroluminescence (EL) imaging [10] are conducted for fired cells. From the I-V measurements, the cell efficiency (η), open-circuit voltage (V OC ), short-circuit current density (j SC ), fill factor (FF), pseudo FF (pFF), ideal FF (FF 0 ), shunt resistance, as well as front and rear side lateral (grid) resistance are extracted.…”

Section: B Investigated Solar Cells and Process Flowmentioning

confidence: 99%

Laser-Powered Co-Firing Process for Highly Efficient Si Solar Cells

Ourinson

Emanuel

Rahmanpour

et al. 2021

IEEE J. Photovoltaics

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This article presents a successful laser-powered cofiring process for highly efficient Si solar cells as a more compact and energy-efficient alternative to the conventional firing process in an infrared (IR) lamp-powered heat chamber. The best cell group reaches with laser firing only 0.1% abs lower cell efficiency compared to the best group with conventional firing, demonstrating the industrial potential of this laser firing technology. Adding the laser enhanced contact optimization (LECO) process after firing improves the cell efficiency for laser firing to the level of conventional firing, demonstrating the potential of the combination of the laser firing and the LECO process.

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“…Luminescence techniques, both electroluminescence (EL) and photoluminescence (PL), are becoming powerful tools for inspecting solar cells and photovoltaic modules, 1‐7 based on the reciprocity relation between photovoltaic quantum efficiency and luminescence emission 8,9 . EL consists of luminescence emission by solar cells under forward bias, 10 thereby spatially resolving defects that affect the performance and/or durability of the modules, such as cracks, heterogeneous cell activity, failed soldering, grid defects, and dark areas in cells associated with dislocation clusters 11‐18 . In contrast, PL consists of luminescence emission under excitation with light 19‐28 .…”

Section: Introductionmentioning

confidence: 99%

Daylight luminescence system for silicon solar panels based on a bias switching method

Guada

Moretón

Rodríguez-Conde

et al. 2020

Energy Science & Engineering

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Luminescence techniques, both electroluminescence (EL) and photoluminescence (PL), are becoming powerful tools for inspecting solar cells and photovoltaic modules, 1-7 based on the reciprocity relation between photovoltaic quantum efficiency and luminescence emission. 8,9 EL consists of luminescence emission by solar cells under forward bias, 10 thereby spatially resolving defects that affect the performance and/or durability of the modules, such as cracks, heterogeneous cell activity, failed soldering, grid defects, and dark areas in cells associated with dislocation clusters. 11-18 In contrast, PL consists of luminescence emission under excitation with light. 19-28 The difficulty involved in obtaining a uniform large-area light excitation source over the module surface has prevented it from being applied to module inspection. This problem was circumvented by using the sun as the excitation source, without having to resort to an artificial light source, for example, a laser. 19,29 PL emission depends on the quality of the material, its defects, for example, dislocations, precipitates, and cracks,

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Influence of external contacting on electroluminescence and fill factor measurements

Cited by 6 publications

References 12 publications

Detection of finger interruptions in silicon solar cells using photoluminescence imaging

Detection of finger interruptions in silicon solar cells using photoluminescence imaging

Laser-Powered Co-Firing Process for Highly Efficient Si Solar Cells

Daylight luminescence system for silicon solar panels based on a bias switching method

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