We show that the rates and extent of oxidation and reduction reactions taking place at the surface of a SnO 2 nanowire, configured as a field-effect transistor, can be modified by changing the electron density in the wire with a gate voltage.Oxygen vacancies on many oxide surfaces (e.g., TiO 2 , SnO 2 , etc.) are electrically and chemically active. When vacancies are created, the electrons left behind are localized in states whose energies lie close to the conduction band and function as n-type donors. 1 As a result, the vacancy creation increases the conductivity of the oxide, often significantly. Furthermore, atoms or molecules interacting with the oxide surface tend to bind at the oxygen vacancy sites. [1][2][3] If the adsorbed molecules are charge acceptors (such as oxygen), then they use the electrons localized at the vacancy sites to make the chemical bond to the surface. As a result, the adsorption of an electron acceptor lowers the conductivity of the n-type oxide. Molecules that react with surface oxygen and remove it create shallow donor states and increase the conductivity. Many solid-state gas sensors make use of this property. [4][5][6][7] Quasi-1D metal oxide nanowires are, in principle, able to improve the performance of chemical sensors significantly and can contribute to a fundamental understanding of these phenomena because they are highly sensitive and tunable electrical transducers of the chemical processes occurring on their surfaces. [8][9][10][11][12] Experimental observations, supported by calculations, suggest that the availability of electrons at the vacancy site affects the chemical activity of the oxide surface. 1,13,14 The influence of an electrostatic field (and the concomitant change in the near-surface electron density) on adsorption and catalysis occurring on macroscopic semiconductor surfaces was predicted and experimentally verified long ago. [15][16][17][18][19] This subject was revisited in connection with the development of FET-based gas sensors. [20][21][22][23] The latter property was inferred from the field dependence of the work function