Metal oxides have attracted significant interest in recent decades owing to their feasible application in resistive switching devices, semiconductor devices, heterogeneous catalysts, optoelectronic devices, and gas-sensing systems. [1][2][3] Moreover, the potential of these metal oxides to substitute SiO 2 gate dielectrics in metaloxide-semiconductor (MOS) systems to overcome the leakage current limitation strengthens the quest in academic and industry curiosity.