Influence of fast neutron irradiation on the phase composition and optical properties of homogeneous SiOx and composite Si–SiOx thin films

Nesheva, D.; Fogarassy, Zsolt; Fábián, Margit; Hristova-Vasileva, Temenuga; Sulyok, A.; Bineva, I.; Valcheva, E.; Antonova, K.; Petrik, P.

doi:10.1007/s10853-020-05338-3

Cited by 3 publications

(6 citation statements)

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“…The thermal annealing at 700 °C causes a “blue” shift of the band to 1056 cm –1 ( x matrix = 1.7–1.8), which indicates that an incomplete phase separation and formation of pure silicon phase took place upon annealing. A considerable neutron-induced “blue” shift from 991 to 1025 cm –1 is also observed in the spectrum of neutron-irradiated films indicating that the neutron irradiation also causes phase separation and formation of a pure amorphous Si phase in the homogeneous samples . A comparison of the FTIR results obtained on SiO x films irradiated with fast electrons and neutrons has shown that the neutron irradiation causes stronger phase separation than the irradiation with fast electrons; the “blue” shift of the stretching band in the FTIR spectra of neutron-irradiated film is around 34 cm –1 , while in the electron-irradiated film it is only 3 cm –1 .…”

Section: Electron and Neutron Irradiation Of Amorphous And Microcryst...mentioning

confidence: 96%

“…Homogeneous SiO x ( x = 1.2) films were irradiated by fast neutrons at a fluence of 4 × 10 17 neutrons/cm 2 . 28 It has been found that this fluence does not cause appreciable damage of the film surface; it remains very smooth, but the irradiation causes phase changes in the films. Fourier transform infrared (FTIR) transmittance spectra of three SiO x films (non-irradiated, neutron-irradiated, and annealed at 700 °C) shown in Figure 5 give evidence of these changes.…”

Section: Electron and Neutron Irradiation Of Amorphous And Microcryst...mentioning

confidence: 97%

“…Homogeneous SiO x ( x = 1.2) films were irradiated by fast neutrons at a fluence of 4 × 10 17 neutrons/cm 2 . It has been found that this fluence does not cause appreciable damage of the film surface; it remains very smooth, but the irradiation causes phase changes in the films.…”

Section: Electron and Neutron Irradiation Of Amorphous And Microcryst...mentioning

confidence: 99%

“…A considerable neutron-induced “blue” shift from 991 to 1025 cm –1 is also observed in the spectrum of neutron-irradiated films indicating that the neutron irradiation also causes phase separation and formation of a pure amorphous Si phase in the homogeneous samples. 28 A comparison of the FTIR results obtained on SiO x films irradiated with fast electrons and neutrons has shown that the neutron irradiation causes stronger phase separation than the irradiation with fast electrons; the “blue” shift of the stretching band in the FTIR spectra of neutron-irradiated film is around 34 cm –1 , while in the electron-irradiated film it is only 3 cm –1 . 28 This observation confirms the much stronger relative displacement effect of neutrons ( Table 1 ).…”

Section: Electron and Neutron Irradiation Of Amorphous And Microcryst...mentioning

confidence: 99%

“… 28 A comparison of the FTIR results obtained on SiO x films irradiated with fast electrons and neutrons has shown that the neutron irradiation causes stronger phase separation than the irradiation with fast electrons; the “blue” shift of the stretching band in the FTIR spectra of neutron-irradiated film is around 34 cm –1 , while in the electron-irradiated film it is only 3 cm –1 . 28 This observation confirms the much stronger relative displacement effect of neutrons ( Table 1 ).…”

Section: Electron and Neutron Irradiation Of Amorphous And Microcryst...mentioning

confidence: 99%

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Electron and Neutron Beam Irradiation Effects in Homogeneous and Nanostructured Oxides

Nesheva

2023

ACS Omega

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Oxide-based materials have a variety of applications in chemical sensing and photocatalysis, thin-film transistors, complex-oxide field-effect transistors, nonvolatile memories, resistive switching, energy conversion, topological oxide electronics, and many others. The radiation resistance of these materials in such devices plays an important role in device operation in radiation environment, and this attracts much attention in the research area. In spite of damage in a number of cases high-energy particles may have a beneficial effect on the target. In this mini-review article examples of both creation of defects and beneficial changes in the structure and properties of homogeneous and nanostructured oxides caused by high-energy electron and neutron irradiation are given by considering some recently published results. First, the attention is turned to ionizing and displacement effects of electron and neutron irradiation in homogeneous bulk and thin-film oxides reported in the literature. Then, the effect of electron and neutron irradiation on nanostructured oxides and semiconductor nanoparticles embedded in an oxide matrix is regarded. Considerable attention is paid to silicon oxide layers since they are widely used in microelectronic products, which are among the most manufactured devices in human history. Processes of irradiation-induced lattice rearrangement, compositional changes, growth of nanoparticles and their size reduction, creation of point defects and their complexes, electron−hole generation, and charge trapping are discussed.

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Section: Electron and Neutron Irradiation Of Amorphous And Microcryst...mentioning

confidence: 96%

Section: Electron and Neutron Irradiation Of Amorphous And Microcryst...mentioning

confidence: 97%

Section: Electron and Neutron Irradiation Of Amorphous And Microcryst...mentioning

confidence: 99%

Section: Electron and Neutron Irradiation Of Amorphous And Microcryst...mentioning

confidence: 99%

Section: Electron and Neutron Irradiation Of Amorphous And Microcryst...mentioning

confidence: 99%

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Electron and Neutron Beam Irradiation Effects in Homogeneous and Nanostructured Oxides

Nesheva

2023

ACS Omega

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Formation and annihilation of point defects in SiO2 glass during neutron irradiation and annealing

You,

Wei,

Xuan

et al. 2025

Journal of Non-Crystalline Solids

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Evidence for the formation of two types of oxygen interstitials in neutron-irradiated α-Al2O3 single crystals

Lushchik

Kuzovkov

Kotomin

et al. 2021

Sci Rep

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Due to unique optical/mechanical properties and significant resistance to harsh radiation environments, corundum (α-Al2O3) is considered as a promising candidate material for windows and diagnostics in forthcoming fusion reactors. However, its properties are affected by radiation-induced (predominantly, by fast neutrons) structural defects. In this paper, we analyze thermal stability and recombination kinetics of primary Frenkel defects in anion sublattice − the F-type electronic centers and complementary oxygen interstitials in fast-neutron-irradiated corundum single crystals. Combining precisely measured thermal annealing kinetics for four types of primary radiation defects (neutral and charged Frenkel pairs) and the advanced model of chemical reactions, we have demonstrated for the first time a co-existence of the two types of interstitial defects – neutral O atoms and negatively charged O- ions (with attributed optical absorption bands peaked at energies of 6.5 eV and 5.6 eV, respectively). From detailed analysis of interrelated kinetics of four oxygen-related defects, we extracted their diffusion parameters (interstitials serve as mobile recombination partners) required for the future prediction of secondary defect-induced reactions and, eventually, material radiation tolerance.

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Influence of fast neutron irradiation on the phase composition and optical properties of homogeneous SiOx and composite Si–SiOx thin films

Cited by 3 publications

References 48 publications

Electron and Neutron Beam Irradiation Effects in Homogeneous and Nanostructured Oxides

Electron and Neutron Beam Irradiation Effects in Homogeneous and Nanostructured Oxides

Formation and annihilation of point defects in SiO2 glass during neutron irradiation and annealing

Evidence for the formation of two types of oxygen interstitials in neutron-irradiated α-Al2O3 single crystals

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