Influence of film thickness and surface orientation on melting behaviors of copper nanofilms

Liao, Ming Liang; Chang, I-Ling; Chang, Fu Rong

doi:10.1557/jmr.2014.13

Cited by 5 publications

(2 citation statements)

References 22 publications

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“…This particular melting of Cu electrode has been observed for 25 switching cycles, each cycle being characterized by Q JH = 40 µJ, according to the values used for rr, and experimental values for R on and for V reset . Since the melting of Cu occurs at 1085 °C for Cu layers thicker than 100 nm, [ 40 ] we can calculate from Equation () the product f loss × f diss using the specific heat capacities for Cu, c s = 0.385 K (g −1 °K −1 ), and for Pt c s = 0.13 J (g −1 °K −1 ), and obtain f loss × f diss = 0.063.…”

Section: Thermal Analysis Predictions Of Reram Cells’ Degradation And...mentioning

confidence: 99%

Analysis of the Electrical ReRAM Device Degradation Induced by Thermal Cross‐Talk

Al‐Mamun

Chakraborty

Orłowski

2023

Adv Elect Materials

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A switching of resistive memory cells leads to a local accumulation of Joules heat in the device. In resistive RAM (ReRAM) arrays, the heat generated in one cell spreads via common electrode metal lines to the neighboring cells and may cause their performance degradation. The performance degradation results in reduced number of switching cycles and, in extreme cases, even in a loss of a bit, caused by the rupture of the nanofilament. The authors propose a thermal analysis of the thermal cross‐talk, describe its impact on cells’ electric performance, and identify three major mechanisms for the ReRAM reliability: (i) thermal conductivity, (ii) the specific heat capacity, and (iii) geometry of the electrodes. Several ReRAM arrays are manufactured to vary thermal conductivity, specific heat and geometry of the electrodes by depositing eight different inert electrodes: Pt(50 nm)/Ti(30 nm), Ru(50 nm)/Ti(30 nm), Co(50 nm)/Ti(30 nm), Pt(50 nm/Cu(100 nm)/Ti(30 nm), Pt(50 nm)/ Cu(200 nm)/Ti(30 nm), Ru(50 nm/Cr(30 nm), Ru(50 nm)/Ti(50 nm), and Rh(50 nm)/Cr(30 nm). The experimentally found differences of the degradation of electric performance of the array cells performed under identical circumstances can be correctly predicted by the proposed thermal analysis using the material properties and geometry parameters of the electrodes.

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Section: Thermal Analysis Predictions Of Reram Cells’ Degradation And...mentioning

confidence: 99%

Analysis of the Electrical ReRAM Device Degradation Induced by Thermal Cross‐Talk

Al‐Mamun

Chakraborty

Orłowski

2023

Adv Elect Materials

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show abstract

“…The size-dependent melting temperature of Al, Cu and Ag has been studied by several groups. 51–93 The melting behavior of nanocrystalline Al was experimentally investigated using differential scanning calorimetry (DSC) by Eckert et al 54 Later, the melting points of Al at different nanoparticle radii were ascertained by Alavi and Thompson 56 using MD simulations. This method was also performed by Puri and Yang 59 to predict the melting of nanosized Al particles in the range of 2–9 nm.…”

Section: Introductionmentioning

confidence: 99%

Nano-crystal melting calculation for Al, Cu and Ag considering macro-crystal surface melting

Liu

et al. 2022

Phys. Chem. Chem. Phys.

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Edge-melting: nanoscale key-mechanism to explain nanoparticle formation from heated TEM grids

Cesaria

Taurino

Catalano

et al. 2016

Applied Surface Science

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Influence of film thickness and surface orientation on melting behaviors of copper nanofilms

Abstract: Abstract

Cited by 5 publications

References 22 publications

Analysis of the Electrical ReRAM Device Degradation Induced by Thermal Cross‐Talk

Analysis of the Electrical ReRAM Device Degradation Induced by Thermal Cross‐Talk

Nano-crystal melting calculation for Al, Cu and Ag considering macro-crystal surface melting

Edge-melting: nanoscale key-mechanism to explain nanoparticle formation from heated TEM grids

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