Influence of Fluoride Ions Contamination in Front Opening Unified Pod (FOUP) Generating Defective Bonding Pad

Kwon, Soon Seok; Hwang, Soon Jung; Kim, Hyoung Ryeun; Jang, Hee Chang; Hong, Jeong Hoon; Song, Gil Joo; Park, Hyun Yul; Kim, Min‐Soo; Shin, Youhwan; Kim, Jin Young; Noh, Tae Yong; Yoo, Seoung-Kyo

doi:10.4209/aaqr.2016.10.0457

Cited by 8 publications

(3 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Kwon et al 19 reported the increases in the Al 2 O 3 thickness on the surface of defective aluminum bonding pads. They observed a linear correlation between the Al 2 O 3 thickness as a function of the residual amount of fluoride ions detected from the surface.…”

Section: Current Knowledge About Amcsmentioning

confidence: 99%

Review—Airborne Molecular Contamination: Recent Developments in the Understanding and Minimization for Advanced Semiconductor Device Manufacturing

Den

Garza

et al. 2020

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

This review paper focuses on the recent knowledge about airborne molecular contamination (AMC) and its impacts on 300-mm wafer fabrication processes. The adverse impacts on process materials by both organic and inorganic micro-contaminants, and evidence of cross-contamination between processed wafers and the mainstream wafer handling tools, are two areas of discussion for the study. The review also aims to re-frame the industrial guideline for AMC from chemical-based to risk-based approach, which substantiates the potential impacts of individual families of AMCs that have been well-documented. This approach resonates well with the new AMC classification method recently proposed by the International Roadmap of Devices and Systems (IRDS), building on new knowledge of AMC emerged over time with the advances of analytical and testing capability. The review also brings forth the impact of moisture, the mere presence of which can compromise the integrity of device structures. However, moisture is especially detrimental in the presence of other inorganic ions to trigger unwanted reactions with surface materials. Methods developed to minimize the micro-contaminants and moisture during wafer handling and storage are also reviewed.

show abstract

Section: Current Knowledge About Amcsmentioning

confidence: 99%

Review—Airborne Molecular Contamination: Recent Developments in the Understanding and Minimization for Advanced Semiconductor Device Manufacturing

Den

Garza

et al. 2020

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…During dry etch patterning, halide by-products can be left over and can lead to a random growth of "water lily" look-like defects. Such surface defects observed over the surface can cause poor ohmic contact and adhesion and must be fully and permanently removed [3,4]. Thus, their chemical composition and formation mechanisms have been thoroughly studied and characterized such as "crystal-like", "oxide-like", "cloud-like", "flower-like" with different compositions such as AlF3, [AlF6] 3or AlxOyFz [5,6,7].…”

Section: Introductionmentioning

confidence: 99%

Selective Removal of Various Resilient Ionic and Halides-Based Surface Contaminants by Wet Cleaning

Audouin,

Passelande,

Garnier

et al. 2023

SSP

View full text Add to dashboard Cite

In this paper, we investigate the use of a wet cleaner developed to dissolve residues left after plasma etching selectively to aluminum in new applications such as the removal of various resilient ionic and halides-based surface contaminants. The compromise between efficiency and selectivity of this fluorinated acid cleaner makes it an interesting chemistry for many cleaning steps during wafer manufacturing. Two new applications were investigated: the selective removal of fluoride-based defects on aluminum pads and surface decontamination of various ionic metals with low substrate consumption. These studies showed very encouraging results in beakers level tests, but also on partly industrial equipment, opening new possibilities for this cleaner. Indeed, “water lily” defects removal seems to be possible with a low aluminum consumption in TechniClean IK73. Decontamination study carried out in static bath and in single wafer tool showed rather similar results, enabling static bath protocol and ionic metals removal to be validated and VPD-ICPMS results, after a short process time in a single wafer tool were very promising with metal levels close to the lower limit of detection of all elements tested.

show abstract

“…Therefore, developing ways to reduce the manufacturing costs and improve the wafer yield are an important concern for the semiconductor manufacturers during the production of highly complex devices, using advanced manufacturing processes. The cleanliness of the manufacturing environment influences the product yield and the device performance [1][2][3]. For example, moisture and oxygen will induce oxidation or a loss of Cu on a wafer during the waiting period [4,5].…”

Section: Introductionmentioning

confidence: 99%

Humidity Control for Front Opening Unified Pod after Opening Its Door in a Mini-Environment

Lin

et al. 2018

Applied Sciences

View full text Add to dashboard Cite

Abstract:Wafers are usually placed in a front opening unified pod (FOUP) while waiting in the line of manufacturing processes; a conventional way for preventing (or removing) contamination is to purge an FOUP with a gas, so as to maintain the cleanliness level. This study investigates the effect of the flow rate of clean dry air (CDA), supplied to the purge system and air curtain, on the moisture prevention performance, while opening the FOUP door in a mini-environment. An initial relative humidity (RH) in the pre-purged FOUP was approximately 0%, whereas an RH in the mini-environment was about 43%. Conventional, diffuser, and panel purge approaches were tested. The results showed that the moisture in the surroundings rapidly entered the FOUP when the door was opened, without using either the purge system or air curtain. When the CDA was then supplied to both the purge system and the air curtain, the RH values decreased significantly; the drop slope of the RH for the diffuser-and panel-purge processes was much larger than that of the conventional-purge process. In addition, the moisture prevention performance when the developed panel-purge system was used was slightly lower than when using the diffuser-purge system. However, the use of the panel-purge method could sufficiently suppress the vibration problem. In the present study, the case with CDA flow rates of 150 L/min to the air curtain and 250 L/min to the panel-purge device had the best moisture prevention performance, because of the smallest values for both the mean and maximum RH values (i.e., 1.3% and 9.5%, respectively) in the FOUP.

show abstract

Influence of Fluoride Ions Contamination in Front Opening Unified Pod (FOUP) Generating Defective Bonding Pad

Cited by 8 publications

References 18 publications

Review—Airborne Molecular Contamination: Recent Developments in the Understanding and Minimization for Advanced Semiconductor Device Manufacturing

Review—Airborne Molecular Contamination: Recent Developments in the Understanding and Minimization for Advanced Semiconductor Device Manufacturing

Selective Removal of Various Resilient Ionic and Halides-Based Surface Contaminants by Wet Cleaning

Humidity Control for Front Opening Unified Pod after Opening Its Door in a Mini-Environment

Contact Info

Product

Resources

About