1996
DOI: 10.12693/aphyspola.90.1070
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Influence of Free Carrier Concentration on Nonlinear Absorption of n-Type ZnSe Crystals

Abstract: The dependence of nonlinear absorption at 532 nm of n-type ZnSe crystals upon annealing temperature and free carrier concentration is reported. The nonlinear optical absorption as well as the efficiency of degenerate four wave mixing of ZnSe are investigated. It is found that the magnitude of the nonlinear absorption decreases with an increase in the electron concentration. The nonlinear refractive index change is estimated:

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“…The band-gap energies of all samples were estimated from measurements of reflection and transmission spectra near to the fundamental absorption edge at different temperatures [4,5]. The temperature dependence of E g for Zn1-x M g…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…The band-gap energies of all samples were estimated from measurements of reflection and transmission spectra near to the fundamental absorption edge at different temperatures [4,5]. The temperature dependence of E g for Zn1-x M g…”
Section: Resultsmentioning
confidence: 99%
“…The photoluminescence and photoreflectivity spectra were measured in the temperature range from 10 to 300 K using a closed cycle cryogenic system (APD-Cryogenic Inc.). Low-temperature reflectance measurements have been performed in backscattering geometry using a 100 W tungsten-halogen lamp as a light source [3,4].…”
Section: Experimental •mentioning
confidence: 99%