Influence of Free Layer Surface Roughness on Magnetic and Electrical Properties of 300 mm CMOS-Compatible MTJ Stacks

Durner, Christoph; Lederer, Maximilian; Gurieva, Tatiana; Hertel, Johannes; Hindenberg, Meike; Gerlich, Lukas; Wagner-Reetz, Maik; Parkin, Stuart

doi:10.1109/tmag.2023.3287134

IEEE Trans. Magn.

2023

DOI: 10.1109/tmag.2023.3287134

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Influence of Free Layer Surface Roughness on Magnetic and Electrical Properties of 300 mm CMOS-Compatible MTJ Stacks

Christoph Durner,

Maximilian Lederer,

Tatiana Gurieva

et al.

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Cited by 3 publications

(2 citation statements)

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“…Nevertheless, all of these solutions are created by wedge deposition, which inherently leads to significant thickness variations in wafer-level production. 65 We introduce a mitigating approach, termed "counter-deposition", aimed at reconciling the thickness variation conundrum while preserving the i-DMI strength. The concept behind this solution is outlined in Figure 5a.…”

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confidence: 99%

“…I-DMI, tilted anisotropy, and the out-of-plane effective field mechanisms have been established as resilient field-free solutions possessing low switching current density and almost 100% switching. Nevertheless, all of these solutions are created by wedge deposition, which inherently leads to significant thickness variations in wafer-level production . We introduce a mitigating approach, termed “counter-deposition”, aimed at reconciling the thickness variation conundrum while preserving the i-DMI strength.…”

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confidence: 99%

See 1 more Smart Citation

Field-Free Spin–Orbit Torque Switching via Oscillatory Interlayer Dzyaloshinskii–Moriya Interaction for Advanced Memory Applications

Lin,

Wang,

Huang

et al. 2023

ACS Materials Lett.

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Realizing robust field-free current-induced switching of perpendicular magnetization is of utmost importance to make spin−orbit torque (SOT) magnetic random-access memory (MRAM) possible. Diverging from the conventional field-free designs utilizing symmetric exchange interaction, this Letter explores the use of antisymmetric interlayer Dzyaloshinskii−Moriya interaction (i-DMI), which facilitates the emergence of noncollinear chiral spin configurations with wedge deposition. This work reveals a clear oscillatory behavior of the i-DMI strength with varying capping layer thickness, aligning with Bruno's model. The strong i-DMI and sizable SOT efficiency observed in an optimized CoFeB/Pt(thick)/Co/ Pt(thin) heterostructure result in a zero thermal critical switching current density of 1.67 × 10 11 A/m 2 and a thermal stability factor of 48.7, indicating the potential of such multilayer design for last-level cache memory applications. A counter-deposition method is also proposed to tackle the thickness variation issue caused by wedge deposition, offering a practical solution for implementing this field-free switching method.

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mentioning

confidence: 99%

mentioning

confidence: 99%

Field-Free Spin–Orbit Torque Switching via Oscillatory Interlayer Dzyaloshinskii–Moriya Interaction for Advanced Memory Applications

Lin,

Wang,

Huang

et al. 2023

ACS Materials Lett.

View full text Add to dashboard Cite

show abstract

Bimodal alteration of cognitive accuracy for spintronic artificial neural networks

Kumar,

Das,

Lin

et al. 2024

Nanoscale Horiz.

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Field-free magnetization switching through modulation of zero-field spin–orbit torque efficacy

Kao,

Lin,

Liao

et al. 2023

APL Materials

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To make spin–orbit torque magnetic random access memory (SOT-MRAM) practical, current-induced magnetization switching without an external bias field is essential. Given that the CoFeB/MgO structure has already been used in typical spin-transfer torque-MRAM for its high tunneling magnetoresistance, leveraging a similar material system to achieve field-free SOT switching is of great importance. In this work, we systematically investigate the field-free switching mechanism in CoFeB/W/CoFeB T-type structures, where the two CoFeB layers are in-plane and perpendicularly magnetized, respectively. Initial SOT characterization shows a sizable zero-field SOT efficacy (χHx=0) for such T-type devices. Furthermore, field-free angle-dependent SOT measurement confirms the parallel relationship between the built-in bias field and the magnetization of the in-plane magnetized CoFeB. Based on thorough verification and exclusion of other potential mechanisms, the Néel orange-peel effect emerges as the dominant origin for such a built-in bias field, where a positive correlation between the deposited film surface roughness and χHx=0 is found. Based on this discovery, the field-free switching efficacy in T-type structures is further optimized via film roughness tuning and examined with pillar-shaped devices. Our results provide insights into the tentative approach to improve field-free switching using T-type devices and the feasibility of downscaling.

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Influence of Free Layer Surface Roughness on Magnetic and Electrical Properties of 300 mm CMOS-Compatible MTJ Stacks

Cited by 3 publications

References 20 publications

Field-Free Spin–Orbit Torque Switching via Oscillatory Interlayer Dzyaloshinskii–Moriya Interaction for Advanced Memory Applications

Field-Free Spin–Orbit Torque Switching via Oscillatory Interlayer Dzyaloshinskii–Moriya Interaction for Advanced Memory Applications

Bimodal alteration of cognitive accuracy for spintronic artificial neural networks

Field-free magnetization switching through modulation of zero-field spin–orbit torque efficacy

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