Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition

Mita, Seiji; Collazo, Ramón; Rice, A.L.; Dalmau, Rafael; Sitar, Zlatko

doi:10.1063/1.2952027

Cited by 114 publications

(78 citation statements)

References 29 publications

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“…In order to analyze as technologically relevant material as possible, we characterized heteroepitaxially MOCVD grown GaN:Mg. Our layers consist of a 700 nm thick GaN:Mg layer deposited on a 1.3 µm thick and not intentionally doped GaN buffer layer which was epitaxially grown on two-inch (0001) sapphire substrates 33 . The full set of specimens with a Mg doping concentration from 8 × 10 17 cm −3 to 2 × 10 19 cm −3 was annealed under N 2 atmosphere at a temperature of 650…”

Section: Methodsmentioning

confidence: 99%

Optical signature of Mg-doped GaN: Transfer processes

et al. 2012

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Mg doping of high quality, metal organic chemical vapor deposition grown GaN films results in distinct traces in their photoluminescence and photoluminescence excitation spectra. We analyze GaN:Mg grown on sapphire substrates and identify two Mg related acceptor states, one additional acceptor state and three donor states which are involved in the donor acceptor pair band transitions situated at 3.26 eV -3.29 eV in GaN:Mg. The presented determination of the donor acceptor pair band excitation channels by photoluminescence excitation spectroscopy in conjunction with temperature dependent photoluminescence measurements results in a direct determination of the donor and acceptor binding, localization, and activation energies which is put into a broader context based on Haynes's rule. Furthermore, we analyze the biexponential decay dynamics of the photoluminescence signal of the acceptor and donor bound excitons. As all observed lifetimes scale with the localization energy of the donor and acceptor related bound excitons, defect and complex bound excitons can be excluded as their origin. Detailed analysis of the exciton transfer processes in the close energetic vicinity of the GaN bandedge reveals excitation via free and bound excitonic channels but also via an excited state as resolved for the deepest localized Mg related acceptor bound exciton. For the two Mg acceptor states we determine binding energies of 164±5 meV and 195±5 meV which is in good agreement with recent density functional theory results. This observation confirms and quantifies the general dual nature of acceptor states in GaN based on the presented analysis of the photoluminescence and photoluminescence excitation spectra.

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Section: Methodsmentioning

confidence: 99%

Optical signature of Mg-doped GaN: Transfer processes

et al. 2012

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“…Vapor supersaturation, in turn, depends on a wide range of parameters-temperature, of course, but also V/III ratio, diluent gas, and total pressure. [48] A related question is that of the surface kinetics of (and interactions between) various growth species on these surfaces, which are currently mostly unknown.…”

Section: Heteroepitaxymentioning

confidence: 99%

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Tsao

Chowdhury

Hollis

et al. 2017

Adv Elect Materials

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“…Using a N 2 diluent gas with triethylgallium, trimethylaluminum, and ammonia precursors, GaN was MOCVD grown under mass transport limited conditions. 42,43 Final GaN growth surfaces had an (0001) Ga-face polarity orientation.…”

Section: Methodsmentioning

confidence: 99%

Selective area epitaxy of magnesium oxide thin films on gallium nitride surfaces

et al. 2015

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Selective area growth of thin films reduces the number of steps in microfabrication processing and enables novel device structures. Here, we report, for the first time, selective area epitaxy of an oxide material on a GaN surface. Chlorination of the GaN surface via wet chemical processing is found effective to disrupt Mg adsorption and selectively prevent molecular beam epitaxy growth of MgO. MgO films grown on neighboring, nonchlorinated surfaces are epitaxial with a (111) MgOjj(0001) GaN crystallographic relationship. Better than 3 lm lateral resolution for the selective area growth of MgO on GaN is demonstrated.

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Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition

Abstract: Articles you may be interested inInfluence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition

Cited by 114 publications

References 29 publications

Optical signature of Mg-doped GaN: Transfer processes

Optical signature of Mg-doped GaN: Transfer processes

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Selective area epitaxy of magnesium oxide thin films on gallium nitride surfaces

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