Influence of GaN substrate miscut on the XRD quantification of plastic relaxation in InGaN

Moneta, J.; Kryśko, M.; Domagala, J.Z.; Grzanka, E.; Muziol, G.; Siekacz, M.; Leszczyński, M.; Smalc-Koziorowska, J.

doi:10.1016/j.actamat.2024.120082

Acta Materialia

2024

DOI: 10.1016/j.actamat.2024.120082

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Influence of GaN substrate miscut on the XRD quantification of plastic relaxation in InGaN

J. Moneta,

M. Kryśko,

J.Z. Domagala

et al.

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2024

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Nanoscale Mapping of the Structural Relaxation in Microstructured In_xGa_1−xN Pseudosubstrates by Scanning X‐ray Diffraction Microscopy

Zatterin,

Barbier,

Torrengo

et al. 2024

Physica Rapid Research Ltrs

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The technological advancement of mobile devices for virtual and augmented reality requires displays that are faster, more energy‐efficient, and of higher resolution. InxGa1−xN‐based micro‐light‐emitting diodes (LEDs) have the potential to realize such advanced displays thanks to their ability to provide emission of red, green, and blue light simply by tuning the In concentration. However, efficient emission in the red still remains a challenge, as it requires high In contents (≈30–40%) that are unobtainable in InxGa1−xN epitaxial layers pseudomorphically strained to GaN substrates. Research efforts have therefore focused on achieving elastic relaxation of the active InxGa1−xN portion of the LED device to allow greater In incorporation, e.g., through the addition of partially relaxed intermediate InxGa1−xN layers in the heterostructure. Herein, the extent of strain relaxation in InxGa1−xN pseudosubstrates grown on GaN‐on‐sapphire substrates as induced by patterning in mesas 10 μm2 in size is evaluated. Using synchrotron‐based scanning X‐ray diffraction microscopy, the lattice strain and tilt are mapped in a single mesa as well as in an ensemble of mesas with ≈60 nm spatial resolution, demonstrating the effectiveness of the processing route in producing high‐quality, partially relaxed InxGa1−xN pseudosubstrates.

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Nanoscale Mapping of the Structural Relaxation in Microstructured In_xGa_1−xN Pseudosubstrates by Scanning X‐ray Diffraction Microscopy

Zatterin,

Barbier,

Torrengo

et al. 2024

Physica Rapid Research Ltrs

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show abstract

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Influence of GaN substrate miscut on the XRD quantification of plastic relaxation in InGaN

Cited by 1 publication

References 35 publications

Nanoscale Mapping of the Structural Relaxation in Microstructured In_xGa_1−xN Pseudosubstrates by Scanning X‐ray Diffraction Microscopy

Nanoscale Mapping of the Structural Relaxation in Microstructured In_xGa_1−xN Pseudosubstrates by Scanning X‐ray Diffraction Microscopy

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Influence of GaN substrate miscut on the XRD quantification of plastic relaxation in InGaN

Cited by 1 publication

References 35 publications

Nanoscale Mapping of the Structural Relaxation in Microstructured InxGa1−xN Pseudosubstrates by Scanning X‐ray Diffraction Microscopy

Nanoscale Mapping of the Structural Relaxation in Microstructured InxGa1−xN Pseudosubstrates by Scanning X‐ray Diffraction Microscopy

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Product

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Nanoscale Mapping of the Structural Relaxation in Microstructured In_xGa_1−xN Pseudosubstrates by Scanning X‐ray Diffraction Microscopy

Nanoscale Mapping of the Structural Relaxation in Microstructured In_xGa_1−xN Pseudosubstrates by Scanning X‐ray Diffraction Microscopy