Influence of Gas Annealing on Sensitivity of AlN/4H-SiC-Based Temperature Sensors

Abstract

In this study, the physical and electrical characteristics of an AlN/4H-SiC Schottky barrier diode-based temperature sensor annealed in various gas atmospheres were investigated. An aluminum nitride (AlN) thin film was deposited on a 4H-SiC substrate via radio-frequency sputtering followed by annealing in N2 or O2 gas. The chemical composition of the film was determined by X-ray photoelectron spectroscopy (XPS) before and after annealing, and its electrical properties were evaluated by plotting a current–voltage (I–V) curve. The voltage–temperature (V–T) characteristics of the sensor were extracted from the current–voltage–temperature (I–V–T) plots constructed in the temperature range between 475 and 300 K in steps of 25 K. Sensitivities of 9.77, 9.37, and 2.16 mV/K were obtained for the as-grown, N2-annealed, and O2-annealed samples, respectively.

Highly Sensitive and Selective Defect WS2 Chemical Sensor for Detecting HCHO Toxic Gases

“…This indicates that V W /WS 2 has high sensitivity and selectivity for HCHO and that HCHO will interact with V W /WS 2 more readily when it is in contact with experimental gas. Device models can be used to predict the performance of electronic devices, including I-V characteristic, power consumption, and speed [47]. We constructed device models, as Figure 11a illustrates.…”

Amorphous BN-Based Synaptic Device with High Performance in Neuromorphic Computing

“…In the case of BN, like AlN, it oxidizes easily. Therefore, when deposited using sputter techniques, it is unavoidable to encounter oxygen in XPS analysis [37,38]. Figure 2a displays the B 1s spectra of a-BN that reveal two peaks related to the B-N (190.5 eV) and B-O (192 eV) bonds [39,40].…”

Epitaxy of (11–22) AlN Films on a Sputtered Buffer Layer with Different Annealing Temperatures via Hydride Vapour Phase Epitaxy

“…The optoelectronic devices grown along this direction suffer from polarised electric fields, which reduce the overlap of wave functions of the electron and hole and decrease the internal quantum luminescence efficiency. Nonpolar AlN (such as (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) and ) is used as a substrate or template for optoelectronic devices [3,4]. Due to the strong anisotropy of nonpolar AlN, it is difficult to grow high-quality nonpolar AlN with a smooth surface [5].…”

“…Due to the strong anisotropy of nonpolar AlN, it is difficult to grow high-quality nonpolar AlN with a smooth surface [5]. Therefore, semi-polar AlN, such as (10)(11), (10)(11)(12)(13) and (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) planes, is a good choice, which could significantly suppress the effect of the polarised electric fields [6]. Over the last decade, controlling the phase structure and improving the crystal quality of semipolar AlN on sapphire has been studied intensively; Mogilatenko et al analysed the formation of semipolar AlN planes with different orientations on interstitial sapphire [7].…”

“…Due to the lack of large-area and low-cost native substrates, AlN-based UV devices have generally been grown on foreign substrates such as sapphire and SiC [8][9][10][11][12][13][14]. However, the growth of high-quality AlN is extremely difficult because of the low migration of Al adatoms on the surface, which always leads to the columnar growth mode and results in a rough surface.…”