Influence of gas atmosphere during growth interruption in the deposition of ZnO films by magnetron sputtering

Park, Te; Kong, Baohua; Cho, Hyung Koun; Dj, Park; Lee, Jun Young

doi:10.1016/j.physb.2005.12.184

Cited by 9 publications

(8 citation statements)

References 10 publications

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“…These results corroborated the findings of the XRD and XPS investigations. Nonetheless, the Al-doped ZnO films did show a slightly coarse natured surface, which can be attributed to the coalescence of the grain boundaries, as previously reported in the case of Al-doped ZnO films deposited via sputtering [12]. Moreover, the optical properties of the as-prepared doped and undoped ZnO-based nanostructures were investigated via UV-Vis spectroscopy.…”

Section: Resultssupporting

confidence: 63%

“…These results corroborated the findings of the XRD and XPS investigations. Nonetheless, the Al-doped ZnO films did show a slightly coarse natured surface, which can be attributed to the coalescence of the grain boundaries, as previously reported in the case of Al-doped ZnO films deposited via sputtering [12]. The surface morphologies of the as-developed pure ZnO, Al-ZnO, and Cu-ZnO thin films were examined using scanning electron microscopic (SEM) studies, and the acquired images are shown in Figure 4.…”

Section: Resultssupporting

confidence: 63%

“…Of these, the RF or DC magnetron sputtering methods offer various merits over the other techniques. The advantages of sputtering include low deposition temperature, fast deposition rates, simple design, cost-effectiveness, and the widespread availability of this deposition technique for growing high-quality films with great uniformity, high packing density, and strong adhesion between the substrate and the film even at fast growth rates [12]. For example, Nomoto et al [13] and Hirahara et al [14] deposited high-quality Al-doped ZnO films via RF sputtering at relatively lower temperatures.…”

Section: Introductionmentioning

confidence: 99%

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Preparation and Characterization of Cu and Al Doped ZnO Thin Films for Solar Cell Applications

et al. 2022

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The Al- and Cu-doped ZnO nanostructured films in this study were deposited using a sputtering technique. Investigations based on X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, Hall effect measurements, and optical transmission spectroscopy was performed to analyze the structural, electrical, and optical characteristics of the prepared Al–ZnO and Cu–ZnO nanostructured films. The analyses show that doping results in enhanced conductivity as well as improved mobility in Al–ZnO and Cu–ZnO films in comparison to pure ZnO films. The Al- and Cu-doped ZnO films exhibited low resistivity (2.9 × 10−4 Ω cm for Al–ZnO and 1.7 × 10−4 Ω cm for Cu–ZnO) along with an average transmittance of around 80% in the visible spectrum. Moreover, the optical bandgaps of undoped ZnO, Al–ZnO, and Cu–ZnO nanostructures were observed as 3.3, 3.28, and 3.24 eV, respectively. Finally, solar cells were assembled by employing ZnO nanostructured thin films as photoelectrodes, resulting in efficiencies of 0.492% and 0.559% for Al–ZnO- and Cu–ZnO-based solar cells, respectively.

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Section: Resultssupporting

confidence: 63%

“…These results corroborated the findings of the XRD and XPS investigations. Nonetheless, the Al-doped ZnO films did show a slightly coarse natured surface, which can be attributed to the coalescence of the grain boundaries, as previously reported in the case of Al-doped ZnO films deposited via sputtering [12]. The surface morphologies of the as-developed pure ZnO, Al-ZnO, and Cu-ZnO thin films were examined using scanning electron microscopic (SEM) studies, and the acquired images are shown in Figure 4.…”

Section: Resultssupporting

confidence: 63%

Section: Introductionmentioning

confidence: 99%

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Preparation and Characterization of Cu and Al Doped ZnO Thin Films for Solar Cell Applications

et al. 2022

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“…Next, the ZnO layer was deposited at a higher temperature on the buffer layer to obtain a high-quality thin film. Reports [ 17 , 18 , 19 ] have shown that there is marked improvement in both the optical properties and crystalline quality achieved through a two-step growth using the RF magnetron sputtering system.…”

Section: Methodsmentioning

confidence: 99%

Ti-doped ZnO Thin Films Prepared at Different Ambient Conditions: Electronic Structures and Magnetic Properties

et al. 2010

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We present a comprehensive study on Ti-doped ZnO thin films using X-ray Absorption Fine Structure (XAFS) spectroscopy. Ti K edge XAFS spectra were measured to study the electronic and chemical properties of Ti ions in the thin films grown under different ambient atmospheres. A strong dependence of Ti speciation, composition, and local structures upon the ambient conditions was observed. The XAFS results suggest a major tetrahedral coordination and a 4+ valence state. The sample grown in a mixture of 80% Ar and 20% O2 shows a portion of precipitates with higher coordination. A large distortion was observed by the Ti substitution in the ZnO lattice. Interestingly, the film prepared in 80% Ar, 20% O2 shows the largest saturation magnetic moment of 0.827 ± 0.013 µB/Ti.

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“…This amorphous SiO x layer degrades the crystal quality of ZnO grown on the Si substrate. To obtain high-quality ZnO thin films grown on Si substrates, several studies have been reported the influence of buffer layers by various methods and processes [1,[12][13][14][15][16][17][18].…”

Section: Introductionmentioning

confidence: 99%

Improvement in crystallinity and optical properties of ZnO epitaxial layers by thermal annealed ZnO buffer layers with oxygen plasma

Kim

et al. 2009

Journal of Crystal Growth

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Influence of gas atmosphere during growth interruption in the deposition of ZnO films by magnetron sputtering

Cited by 9 publications

References 10 publications

Preparation and Characterization of Cu and Al Doped ZnO Thin Films for Solar Cell Applications

Preparation and Characterization of Cu and Al Doped ZnO Thin Films for Solar Cell Applications

Ti-doped ZnO Thin Films Prepared at Different Ambient Conditions: Electronic Structures and Magnetic Properties

Improvement in crystallinity and optical properties of ZnO epitaxial layers by thermal annealed ZnO buffer layers with oxygen plasma

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