Influence of Germanium source on dopingless tunnel-FET for improved analog/RF performance

Cecil, Kanchan; Singh, Jawar

doi:10.1016/j.spmi.2016.11.039

Cited by 28 publications

(11 citation statements)

References 15 publications

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“…The HTFET can effectively decrease the tunneling barrier width, thereby increasing the band tunneling efficiency. UTFET mainly use the embedded channel to obtain the larger line tunneling area to increase the on-state current [16]. The DLTFET can solve the heavily doped technology problem.…”

Section: Introductionmentioning

confidence: 99%

TCAD Simulation of the Doping-Less TFET with Ge/SiGe/Si Hetero-Junction and Hetero-Gate Dielectric for the Enhancement of Device Performance

et al. 2020

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The device structure of DLTFET is optimized by the Silvaco TCAD software to solve the problems of lower on-state current and larger miller capacitance of traditional doping-less tunneling field effect transistors (DLTFETs), and the performance can be greatly improved. Different from the traditional DLTFETs, the source region and pocket region of the doping-less TFET with the Ge/SiGe/Si hetero-junction and hetero-gate dielectric (H-DLTFET), respectively, use the narrow band-gap semiconductor Ge and SiGe materials, and the channel and drain region both use the silicon material. The H-DLTFET device use the Ge/SiGe hetero-junction engineering to decrease the tunneling barrier width, increase the band-to-band tunneling current, and obtain the higher current switching ratio and ultra-low sub-threshold swing (SS). Besides, the gate dielectric under auxiliary gate uses the low-k dielectric SiO2 material, which can effectively reduce the miller capacitance and improve the capacitance and frequency characteristics. The on-state current, switching ratio, trans-conductance, output current, and output conductance values of H-DLTFET can be increased by two, two, one, one, and one order of magnitude when compared with the DLTFET, respectively. Meanwhile, the point SS and average SS, respectively, decrease from 13 mV/Dec and 31.6 mV/Dec to 5 mV/Dec and 14.3 mV/Dec, and the gate-drain capacitance decrease from 0.99 fF/μm to 0.1 fF/μm. Besides, the cutoff frequency and gain bandwidth product of H-DLTFET are much larger than that of DLTFET, which can be explained by the excellent DC characteristics. The above simulation results show that the H-DLTFET has the better frequency characteristics, so it is more suitable for applications of ultra-low-power integrated circuits.

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Section: Introductionmentioning

confidence: 99%

TCAD Simulation of the Doping-Less TFET with Ge/SiGe/Si Hetero-Junction and Hetero-Gate Dielectric for the Enhancement of Device Performance

et al. 2020

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“…To improve the analog/radio frequency (RF) performance and simplify the fabrication processes of TFETs, a doping-less tunnel field-effect transistor (DLTFET) is proposed [18,19]. A DLTFET can form heavily doped source and drain regions using the appropriate metal electrode work functions.…”

Section: Introductionmentioning

confidence: 99%

A Doping-Less Tunnel Field-Effect Transistor with Si0.6Ge0.4 Heterojunction for the Improvement of the On–Off Current Ratio and Analog/RF Performance

et al. 2019

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In this paper, a novel doping-less tunneling field-effect transistor with Si0.6Ge0.4 heterojunction (H-DLTFET) is proposed using TCAD simulation. Unlike conventional doping-less tunneling field-effect transistors (DLTFETs), in H-DLTFETs, germanium and Si0.6Ge0.4 are used as source and channel materials, respectively, to provide higher carrier mobility and smaller tunneling barrier width. The energy band and charge carrier tunneling efficiency of the tunneling junction become steeper and higher as a result of the Si0.6Ge0.4 heterojunction. In addition, the effects of the source work function, gate oxide dielectric thickness, and germanium content on the performance of the H-DLTFET are analyzed systematically, and the below optimal device parameters are obtained. The simulation results show that the performance parameters of the H-DLTFET, such as the on-state current, on/off current ratio, output current, subthreshold swing, total gate capacitance, cutoff frequency, and gain bandwidth (GBW) product when Vd = 1 V and Vg = 2 V, are better than those of conventional silicon-based DLTFETs. Therefore, the H-DLTFET has better potential for use in ultra-low power devices.

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“…Different from the MOSFETs, the working mechanism of tunneling field effect transistors (TFETs) is based on the quantum effect of electron Band-To-Band Tunneling (BTBT). The TFETs have the lower off-state leakage current, higher robustness of the short channel effect and faster switching speed, which is compatible with CMOS processes [10,11]. The TFET can break the SS limit of 60 mV/Dec, which can obtain the better device performance and lower static power consumption under the lower voltage operating conditions [12].…”

Section: Introductionmentioning

confidence: 99%

Design and Investigation of the High Performance Doping-Less TFET with Ge/Si0.6Ge0.4/Si Heterojunction

et al. 2019

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A high performance doping-less tunneling field effect transistor with Ge/Si0.6Ge0.4/Si heterojunction (H-DLTFET) is proposed in this paper. Compared to the conventional doping-less tunneling field effect transistor (DLTFET), the source and channel regions of H-DLTFET respectively use the germanium and Si0.6Ge0.4 materials to get the steeper energy band, which can also increase the electric field of source/channel tunneling junction. Meanwhile, the double-gate process is used to improve the gate-to-channel control. In addition, the effects of Ge content, electrode work functions, and device structure parameters on the performance of H-DLTFET are researched in detail, and then the above optimal device structure parameters can be obtained. Compared to the DLTFET, the simulation results show that the maximum on-state current, trans-conductance, and output current of H-DLTFET are all increased by one order of magnitude, whereas the off-state current is reduced by two orders of magnitude, so the switching ratio increase by three orders of magnitude. At the same time, the cut-off frequency and gain bandwidth product of H-DLTFET increase from 1.75 GHz and 0.23 GHz to 23.6 GHz and 4.69 GHz, respectively. Therefore, the H-DLTFET is more suitable for the ultra-low power integrated circuits.

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Influence of Germanium source on dopingless tunnel-FET for improved analog/RF performance

Cited by 28 publications

References 15 publications

TCAD Simulation of the Doping-Less TFET with Ge/SiGe/Si Hetero-Junction and Hetero-Gate Dielectric for the Enhancement of Device Performance

TCAD Simulation of the Doping-Less TFET with Ge/SiGe/Si Hetero-Junction and Hetero-Gate Dielectric for the Enhancement of Device Performance

A Doping-Less Tunnel Field-Effect Transistor with Si0.6Ge0.4 Heterojunction for the Improvement of the On–Off Current Ratio and Analog/RF Performance

Design and Investigation of the High Performance Doping-Less TFET with Ge/Si0.6Ge0.4/Si Heterojunction

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