Abstract:Extreme ultraviolet mask substrate surface roughness effects on lithographic patterning J. Vac. Sci. Technol. B 28, C6E23 (2010); 10.1116/1.3502436 Protection and reduction of surface oxidation of Mo ∕ Si multilayers for extreme ultraviolet lithography projection optics by control of hydrocarbon gas atmosphere
“…where r is the rms surface roughness of the multi-layer film and k is the wavelength of the EUV-light equal to 13.5 nm [16,17]. The pre-exponential term R 0 involves both the Si-on-Mo and Mo-on-Si inter-diffusion layer thicknesses as parameters.…”
“…where r is the rms surface roughness of the multi-layer film and k is the wavelength of the EUV-light equal to 13.5 nm [16,17]. The pre-exponential term R 0 involves both the Si-on-Mo and Mo-on-Si inter-diffusion layer thicknesses as parameters.…”
“…3 illustrates AFM images revealing topological characteristics of typical LBL-PET film surface etched by HCl solution at pH of 1.1 with different etching time of 15, 30, 60 and 90 min. Normally, bare glass substrate would exhibit a root-mean-square surface roughness of 8-10 nm [11]. The untreated LBL-PET films subject to AFM analyses would possess a relatively smaller surface roughness of 5-8 nm (not shown here).…”
Section: Effect Of Etching Time On Hydrophilicity Of Lbl-pet Filmsmentioning
“…The EUV-reflectivity can be expressed as where is the rms surface roughness of the multi-layer film and is the wavelength of the EUV light [16,17]. The pre-exponential term R 0 depends on both the Si-on-Mo and Mo-on-Si interdiffusion layer thicknesses.…”
Section: Euv-reflectivity In Multi-layer Filmsmentioning
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