Influence of Grain Boundary Scattering on the Field-Effect Mobility of Solid-Phase Crystallized Hydrogenated Polycrystalline In2O3 (In2O3:H)

Magari, Yusaku; Yeh, Wenchang; Ina, Toshiaki; Furuta, Mamoru

doi:10.3390/nano12172958

Cited by 4 publications

(1 citation statement)

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“…[60] Most of the studies attribute the enhanced mobility to the passivation of hydrogen and the promotion of grain growth, although direct evidence and characterization at the atomic scale are lacking. In 2 O 3 :H films have been widely used in various fields such as thin-film transistors, [61,62] silicon solar cells, [63] perovskite solar cells, [64,65] and quantum dot solar cells. [66] Despite a large number of studies on high mobility In 2 O 3 :H film applications, the exact processes involved in hydrogen doping and scattering remain unclear, and the specific mechanism of the high mobility of In 2 O 3 :H film is still uncertain.…”

Section: Introductionmentioning

confidence: 99%

Insight into the High Mobility and Stability of In₂O₃:H Film

Ge,

Liu,

Zhu

et al. 2023

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Wide bandgap semiconductors, particularly In2O3:Sn (ITO), are widely used as transparent conductive electrodes in optoelectronic devices. Nevertheless, due to the strohave beenng scattering probability of high‐concentration oxygen vacancy (VO) defects, the mobility of ITO is always lower than 40 cm2 V−1 s−1. Recently, hydrogen‐doped In2O3 (In2O3:H) films have been proven to have high mobility (>100 cm2 V−1 s−1), but the origin of this high mobility is still unclear. Herein, a high‐resolution electron microscope and theoretical calculations are employed to investigate the atomic‐scale mechanisms behind the high carrier mobility in In2O3:H films. It is found that VO can cause strong lattice distortion and large carrier scattering probability, resulting in low carrier mobility. Furthermore, hydrogen doping can simultaneously reduce the concentration of VO, which accounts for high carrier mobility. The thermal stability and acid–base corrosion mechanism of the In2O3:H film are investigated and found that hydrogen overflows from the film at high temperatures (>250 °C), while acidic or alkaline environments can cause damage to the In2O3 grains themselves. Overall, this work provides insights into the essential reasons for high carrier mobility in In2O3:H and presents a new research approach to the doping and stability mechanisms of transparent conductive oxides.

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Section: Introductionmentioning

confidence: 99%

Insight into the High Mobility and Stability of In₂O₃:H Film

Ge,

Liu,

Zhu

et al. 2023

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Ce Promotion of In₂O₃ for Electrochemical Reduction of CO₂ to Formate

Wissink,

Rollier,

Muravev

et al. 2024

ACS Catal.

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In 2 O 3 is a promising electrocatalyst for CO 2 electroreduction (CO 2 ER) to formate. In 2 O 3 nanoparticles doped with Pd, Ni, Co, Zr, and Ce promoters using flame-spray pyrolysis were characterized and evaluated in a gas diffusion electrode for the CO 2 ER. Doping results in slight shifts of the In binding energy as probed by XPS, which correlates with a change of the Faradaic efficiency to formate (FE formate ) in the order Ce-dopedHowever, the differences in CO 2 ER performance are caused mainly by the different extent of In 2 O 3 reduction. Co-doped In 2 O 3 is prone to complete reduction to a stable Co−In alloy with a low FE formate due to a high hydrogen evolution activity. The stabilizing effect of Ce on In 2 O 3 is further demonstrated by an Xray absorption spectroscopy study of a set of Ce-doped In 2 O 3 samples (10, 50, 90 at%), highlighting that reduction of In 2 O 3 is suppressed with increasing Ce content. Optimum performance in terms of FE formate is obtained at a Ce content of 10 at%, which is attributed to the stabilization of In 2 O 3 under negative bias up to −2 V. At higher Ce content, less active CeO 2 is formed. The highest FE formate of 86% observed for In 2 O 3 doped with 10 at% Ce, at a current density of 150 mA/cm 2 , compares favorably with a FE formate of 78% for In 2 O 3 .

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Effect of Electrical Performance and Reliability by Adjustment of the Sequence and Concentration of HfAlO_x on IWO Thin-Film Transistors

Chen,

Li,

Wang

et al. 2024

IEEE Trans. Nanotechnology

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Influence of Grain Boundary Scattering on the Field-Effect Mobility of Solid-Phase Crystallized Hydrogenated Polycrystalline In2O3 (In2O3:H)

Cited by 4 publications

References 44 publications

Insight into the High Mobility and Stability of In₂O₃:H Film

Insight into the High Mobility and Stability of In₂O₃:H Film

Ce Promotion of In₂O₃ for Electrochemical Reduction of CO₂ to Formate

Effect of Electrical Performance and Reliability by Adjustment of the Sequence and Concentration of HfAlO_x on IWO Thin-Film Transistors

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Influence of Grain Boundary Scattering on the Field-Effect Mobility of Solid-Phase Crystallized Hydrogenated Polycrystalline In2O3 (In2O3:H)

Cited by 4 publications

References 44 publications

Insight into the High Mobility and Stability of In2O3:H Film

Insight into the High Mobility and Stability of In2O3:H Film

Ce Promotion of In2O3 for Electrochemical Reduction of CO2 to Formate

Effect of Electrical Performance and Reliability by Adjustment of the Sequence and Concentration of HfAlOx on IWO Thin-Film Transistors

Contact Info

Product

Resources

About

Insight into the High Mobility and Stability of In₂O₃:H Film

Insight into the High Mobility and Stability of In₂O₃:H Film

Ce Promotion of In₂O₃ for Electrochemical Reduction of CO₂ to Formate

Effect of Electrical Performance and Reliability by Adjustment of the Sequence and Concentration of HfAlO_x on IWO Thin-Film Transistors