Influence of growth conditions on morphology, composition, and electrical properties of n-Si wires

Klimovskaya, A. I.; Ostrovskii, Igor; Ostrovskaya, A. S.

doi:10.1002/pssa.2211530221

Cited by 39 publications

(19 citation statements)

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“…Therefore, growth of whiskers doped with single impurity was mainly under consideration. Our previous study [3,4] was devoted to an experimental investigation of growth mechanisms of Si and Si-Ge whiskers doped with single impurities Au, B, Pt. The growth of whiskers with multiple doping was insufficiently studied.…”

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“…The following combinations of doping impurities were used: <Ni+Pt>, <Ni+B>, <Ni+Mn>, <Ni+Pt+Mn>, <Au+B+Pt>, <La+Au>, <Zn+Hf+Au>. A choice of impurity types was determined as by fundamental study of low dimensional structure peculiarities [3] and by a possibility of whisker's applications [5]. For instance, behaviour of Ni as initiator of Si-Ge whisker growth is not as yet studied, while the whisker doping with rarely earth elements leads to increase of their photoconductance what is prospective for photoconverters design.…”

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confidence: 99%

“…Ge composition of grown whiskers was controlled by micro probe analysis. Bromine was used as transport agent, its concentration falls within the range 0.5-1 mg/cm 3 . Temperature of evaporation zone consists of 1200 °C, while temperature of crystallization zone is equal to 800 -1000 °C.…”

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Investigation of Si–Ge whisker growth by CVD

Druzhinin

Ostrovskii

2004

phys. stat. sol. (c)

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The present paper deals with study of Si 1-x Ge x (x = 0 ÷ 0.11) whiskers growth in sealed Si -Ge -Br systems by CVD method. An influence of multiple doping (Zn, Hf, Ni, Mn) on morphology of the whiskers was investigated. A model based on evaluation of impurity activity coefficients in Si crystals was proposed. High impurity activity coefficients were established to correspond to submicron whisker growth. As the impurity activity coefficient decreases, the whisker morphology changes from twinned ribbon to needle-like crystals with perfect surface of facets.

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Investigation of Si–Ge whisker growth by CVD

Druzhinin

Ostrovskii

2004

phys. stat. sol. (c)

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“…As silicon is the most important electronic material, its nanoscale form, Si nanowire ͑SINW͒ has attracted much attention following the repeat of microscale Si whiskers. 5,6 Quasi-one-dimensional SINWs have been synthesized by electron-beam ͑EB͒ lithography, 7 etching technique, 8 and scanning tunneling microscopy ͑STM͒. 9 Recently, we reported 10,11 bulk-quantity production of freestanding SINWs by the laser ablation method.…”

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Morphology of Si nanowires synthesized by high-temperature laser ablation

Tang

Zhang

Wang

et al. 1999

Journal of Applied Physics

104

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Silicon nanowires have been synthesized by laser ablation of Si powder targets at 1200 °C. Transmission electron microscopy study showed that most Si nanowires had smooth surfaces and nearly the same diameter of about 16 nm. Beside the most abundant smooth-surface nanowires, four other forms of nanowires, named spring-shaped, fishbone-shaped, frog-egg-shaped, and necklace-shaped nanowires, were observed. The formation of nanowires into different shapes was explained by the two-step growth model based on the vapor–liquid–solid mechanism.

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“…The latter is more promising because it shows a way to produce low-cost devices. Therefore, last decade much attention was paid to a catalytic growth of nanoobjects (dots and wires) on the substrate, especially, on silicon substrate that attractive to compose nanoobjects with Si integrated-circuit technology [2][3][4][5].…”

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<title>Complex nanostructured silicon wire</title>

et al. 2002

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Growth of silicon nanoobjects integrated to silicon based electronic circuits is of great importance for nano-, optoelectronics as well microsensorics. In this work, self-organizing technology has been used to grow silicon wires of complex structure on silicon substrate. To characterize the wires different high-resolution instruments (Hitachi SEM S806, CM 200 UT Philips) have been used. It was found that a morphology and crystalline structure of the wires are controlled by growth conditions. In general, the wires consist of a c-Si core and a Si-based envelope. A thickness of the core ranges between 50 to 500 nm, while a thickness of the envelope changes from few to few hundreds of nanometers. Morphology of the envelope is very sensitive to the growth conditions. Depending on the conditions it consists of amorphous or nanoporous silicon or silicon quasi-crystal. Nanopores in porous envelope have semi-spherical shape, and their sizes range between 0.4 to 20 nm. Nanopores are ordered into a superlattice or in a layered heterostructure with separating amorphous layers. Phenomena of the wire growth and possible applications of the wires grown on silicon substrate (as field transistors, electron-or light-emitters and chemical sensors) are discussed.

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Influence of growth conditions on morphology, composition, and electrical properties of n-Si wires

Cited by 39 publications

References 3 publications

Investigation of Si–Ge whisker growth by CVD

Investigation of Si–Ge whisker growth by CVD

Morphology of Si nanowires synthesized by high-temperature laser ablation

<title>Complex nanostructured silicon wire</title>

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