Influence of growth parameters and systematical analysis on 8-inch piezoelectric AlN thin films by magnetron sputtering

Wu, Shaocheng; Xu, Rongbin; Guo, Bingliang; Ma, Yinggong; Yu, Daquan

doi:10.1016/j.mssp.2023.107895

Cited by 3 publications

(1 citation statement)

References 36 publications

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“…Hence, solving the problem of preparing high-quality AlN substrates is the key to obtaining high-quality AlGaN materials. − In recent years, it has been shown that low-cost, easy-to-operate high-temperature annealing can significantly improve the crystal quality of films. − In 2023, Shojiki et al controlled high-temperature face-to-face annealed sputter-deposited AlN to produce different polarities, and then combined this polarity-control method with a dual sputtering and annealing method to realize vertical polar heterostructures with controlled layer thicknesses without increasing the threading dislocation densities. Meanwhile, improving the process parameters for growing AlN films is also crucial. − Claudel et al utilized the hydride vapor phase epitaxy (HVPE) method and found that the surface morphology, roughness, and crystalline quality of the AlN films greatly improved at the optimum V/III ratio.…”

Section: Introductionmentioning

confidence: 99%

Relationship between Annealing and V/III Ratios during MNVPE of AlN Films

Li,

Zhang,

Cao

et al. 2024

Crystal Growth & Design

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High-quality aluminum nitride (AlN) films are considered to be the key to the preparation of excellent UV optoelectronic devices. In this paper, metal nitride vapor phase epitaxy (MNVPE) and face-to-face annealing were combined to study the changes in crystal quality, internal stress, and optical properties of AlN films with different V/III ratios after hightemperature annealing with theoretical explanations. X-ray diffraction was used to characterize the film quality. The best quality of AlN films was found at V/III = 4420. After annealing at 1675 °C for 1 h, the quality of AlN films was significantly improved, with the AlN film at V/III = 4420 still having the best quality after annealing, and the full width at half-maximum of the (002) rocking curve was 521 arcsec. Combined with scanning electron microscopy tests, high-temperature annealing led to grain growth in the AlN films, promoting the reduction of grain boundaries. According to the Raman spectroscopy test results, the internal stresses of the annealed AlN films were released. The UV−visible spectroscopy results showed that annealing improved the transmittance and band gap of the films, thus optimizing the optical properties of the AlN films. This work enriches the mechanism of annealing to improve film quality and explores the relationship between the V/III ratio parameter of MNVPE and high-temperature annealing, which is of great significance for preparing high-quality AlN films.

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Section: Introductionmentioning

confidence: 99%

Relationship between Annealing and V/III Ratios during MNVPE of AlN Films

Li,

Zhang,

Cao

et al. 2024

Crystal Growth & Design

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Structural and Optical Properties of Aluminium Nitride Thin Films Fabricated Using Pulsed Laser Deposition and DC Magnetron Sputtering on Various Substrates

Virt,

Potera,

Wisz

et al. 2024

Advances in Materials Science

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Aluminium nitride thin films were fabricated using pulsed laser deposition and DC magnetron sputtering. Different technological parameters and the effects of different substrates on the optical and structural parameters of AlN samples were studied. An X-ray diffraction study was performed for the layer deposited on the Si3N4 substrate. A high-energy electron diffraction study was also carried out for the layer deposited on a KCl substrate. Transmission spectra of layers on quartz, sapphire, and glass substrates were obtained. An evaluation of the optical band gap of the obtained layers was carried out (Eg form 3.81 to 5.81 eV) and the refractive index was calculated (2.58). The relative density of the film (N1TN-AlN sample) is 1.26 and was calculated using the Lorentz-Lorentz relationship. Layers of aluminium nitride show an amorphous character with a polycrystalline region. It was shown that the properties of AlN films strongly depend on the method, growth conditions, and substrate used.

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Recent Advances in Aluminum Nitride (AlN) Growth by Magnetron Sputtering Techniques and Its Applications

Jadoon,

Puvanenthiram,

Mosa

et al. 2024

Inorganics

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This review explores the processes involved in enhancing AlN film quality through various magnetron sputtering techniques, crucial for optimizing performance and expanding their application scope. It presents recent advancements in growing AlN thin films via magnetron sputtering, elucidating the mechanisms of AlN growth and navigating the complexities of thin-film fabrication. Emphasis is placed on different sputtering methods such as DC, RF, pulsed DC, and high-power impulse DC, highlighting how tailored sputtering conditions enhance film characteristics in each method. Additionally, the review discusses recent research findings showcasing the dynamic potential of these techniques. The practical applications of AlN thin films, including wave resonators, energy harvesting devices, and thermal management solutions, are outlined, demonstrating their relevance in addressing real-world engineering challenges.

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Influence of growth parameters and systematical analysis on 8-inch piezoelectric AlN thin films by magnetron sputtering

Cited by 3 publications

References 36 publications

Relationship between Annealing and V/III Ratios during MNVPE of AlN Films

Relationship between Annealing and V/III Ratios during MNVPE of AlN Films

Structural and Optical Properties of Aluminium Nitride Thin Films Fabricated Using Pulsed Laser Deposition and DC Magnetron Sputtering on Various Substrates

Recent Advances in Aluminum Nitride (AlN) Growth by Magnetron Sputtering Techniques and Its Applications

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