Influence of growth parameters on the properties of InGaN/GaN multiple quantum well grown by metalorganic chemical vapor deposition

Kim, T.K.; Shim, Sang Kyun; Yang, Seong Seok; Son, Jae-Kwon; Hong, Yongseok; Yang, Gye Mo

doi:10.1016/j.cap.2006.10.008

Cited by 10 publications

(3 citation statements)

References 17 publications

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“…For the InGaN/GaN MQWs grown with the common metal organic chemical vapor deposition (MOCVD) method, the structural and optical properties are very sensitive to the main growth parameters such as growth temperature, pressure, and gas flows. The influences of trimethylindium (TMIn), [8] ammonia, [9] and hydrogen [10] on the optical and electrical characteristics of InGaN/GaN-MQWs-based optoelectronics have been widely investigated. However, the effect of the triethylgallium (TEGa) flow, which is usually used as the Ga source when growing InGaN QWs, is seldom reported.…”

Section: Introductionmentioning

confidence: 99%

Performance improvement of InGaN/GaN multiple quantum well visible-light photodiodes by optimizing TEGa flow

et al. 2017

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The performance of an InGaN/GaN multiple quantum well (MQW) based visible-light Schottky photodiode (PD) is improved by optimizing the source flow of TEGa during InGaN QW growth. The samples with five-pair InGaN/GaN MQWs are grown on sapphire substrates by metal organic chemical vapor deposition. From the fabricated Schottky-barrier PDs, it is found that the smaller the TEGa flow, the lower the reverse-bias leakage is. The photocurrent can also be enhanced by depositing the InGaN QWs with using lower TEGa flow. A high responsivity of 1.94 A/W is obtained at 470 nm and −3-V bias in the PD grown with optimized TEGa flow. Analysis results show that the lower TEGa flow used for depositing InGaN may lead to superior crystalline quality with improved InGaN/GaN interface, and less structural defects related non-radiative recombination centers formed in the MQWs.

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Section: Introductionmentioning

confidence: 99%

Performance improvement of InGaN/GaN multiple quantum well visible-light photodiodes by optimizing TEGa flow

et al. 2017

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“…The growth conditions of InGaN with an indium composition around 20% in MQWs, which is the key component of the green LEDs, need to be further optimized. As important growth parameters, the gases introduced into the reactor during growing InGaN/GaN MQWs by metalorganic chemical vapor deposition (MOCVD), namely the trimethylindium (TMIn) [8], ammonia [9] and hydrogen [10], were widely investigated. However, the effect of the triethylgallium (TEGa) flow, which is usually used as the Ga source when growing InGaN quantum wells, is seldom reported.…”

Section: Introductionmentioning

confidence: 99%

Influence of the TEGa flow on the optical and structural properties of InGaN/GaN multiple quantum wells grown by MOCVD

Huang

Fan

Xian

et al. 2011

Journal of Crystal Growth

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“…To avoid such a problem, it would be beneficial to grow the InGaN well layers and GaN barrier layers at different temperatures. Furthermore, it has been reported that growth parameters such as growth temperature [4][5][6][7][8][9][10], growth pressure [11], growth interruption [12,13] and the use of H 2 carrier gas [14] significantly affect the crystal quality of InGaN/GaN MQWs and the performance of the nitride-based LEDs. Thus, in order to understand more clearly the effect of growth conditions (temperature and carrier gas, etc) on the crystal quality of InGaN/GaN MQWs, the structural and optical properties of InGaN/GaN MQWs with various growth conditions must be studied in detail.…”

Section: Introductionmentioning

confidence: 99%

Optimization of InGaN/GaN multiple quantum well layers by a two-step varied-barrier-growth temperature method

Leem

Shin

Kim

et al. 2008

Semicond. Sci. Technol.

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We report the effect of different temperature profiles on the quality of the InGaN/GaN multiple quantum well (MQW) structures by employing photoluminescence (PL) and atomic force microscopy (AFM). We adopted a two-step varied-barrier-growth temperature method to improve the structural and optical properties of the InGaN/GaN MQW layers. The low-temperature GaN barrier layer was introduced to reduce the desorption rate of the indium atoms of the InGaN well, and then the high-temperature GaN barrier was grown to reduce the defects of InGaN/GaN MQWs. When the width of the low-temperature GaN barrier was 50 Å and the high-temperature GaN barrier was grown at 1000 • C, the defect and surface roughness were significantly reduced, especially with a reduction in the depth of V-defect as low as 20 Å.

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Influence of growth parameters on the properties of InGaN/GaN multiple quantum well grown by metalorganic chemical vapor deposition

Cited by 10 publications

References 17 publications

Performance improvement of InGaN/GaN multiple quantum well visible-light photodiodes by optimizing TEGa flow

Performance improvement of InGaN/GaN multiple quantum well visible-light photodiodes by optimizing TEGa flow

Influence of the TEGa flow on the optical and structural properties of InGaN/GaN multiple quantum wells grown by MOCVD

Optimization of InGaN/GaN multiple quantum well layers by a two-step varied-barrier-growth temperature method

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