Influence of growth temperature on growth of InGaAs nanowires in selective-area metal–organic vapor-phase epitaxy

Kohashi, Yoshinori; Sato, Taketomo; Ikejiri, Keitaro; Tomioka, Katsuhiro; Hara, Shinjiro; Motohisa, Junichi

doi:10.1016/j.jcrysgro.2011.10.041

Cited by 25 publications

(18 citation statements)

References 26 publications

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“…The growth temperature, T G , was 695 C and kept constant throughout the experiment to minimize the variation of the alloy composition in InGaAs. [9][10][11] Figure 1(a) shows SEM images of InGaAs NWs with d 0 ¼ 50 nm and a ¼ 3 m. The V/III ratio was 107, which, according to our previous reports, is the optimum value for obtaining highly uniform NWs while minimizing radial growth. [9][10][11][12] We can observe highly uniform NWs having six f 110g side facets normal to the (111)B plane.…”

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confidence: 85%

“…[9][10][11] Figure 1(a) shows SEM images of InGaAs NWs with d 0 ¼ 50 nm and a ¼ 3 m. The V/III ratio was 107, which, according to our previous reports, is the optimum value for obtaining highly uniform NWs while minimizing radial growth. [9][10][11][12] We can observe highly uniform NWs having six f 110g side facets normal to the (111)B plane. The height of the NWs, h, is 3.5 m, and their gallium composition was 77%, estimated by micro-photoluminescence measurements at 4.2 K. 12) The NW diameter, d, was larger than d 0 and was 120 nm.…”

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confidence: 85%

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Pitch-Independent Realization of 30-nm-Diameter InGaAs Nanowire Arrays by Two-Step Growth Method in Selective-Area Metalorganic Vapor-Phase Epitaxy

Kohashi

Sakita

Hara

et al. 2013

Appl. Phys. Express

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Control of the diameter and pitch of InGaAs nanowire arrays in selective-area metalorganic vapor-phase epitaxy was investigated. It was found that their nucleation was strongly dependent on the geometry of the mask, resulting in the difficulty of nucleation for a larger mask pitch, particularly for an opening diameter of less than 50 nm. Precise adjustment of the V/III ratio enabled us to control the nucleation independently of the mask pitch for smaller openings, and we successfully obtained 30-nm-diameter InGaAs nanowires independently of the mask pitch by the proposing V/III-ratio-controlled two-step growth method. #

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confidence: 85%

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confidence: 85%

Pitch-Independent Realization of 30-nm-Diameter InGaAs Nanowire Arrays by Two-Step Growth Method in Selective-Area Metalorganic Vapor-Phase Epitaxy

Kohashi

Sakita

Hara

et al. 2013

Appl. Phys. Express

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“…The difference of In composition in the solid and vapor implies that incorporation rate of In and Ga is different, and that of In is larger than that of Ga at the present growth conditions. Increase of In incorporation at lower growth temperature is mainly due to the suppression of re-evaporation of In from InGaAs layers and is thought to be a consequence of the nature of In-rich InGaAs NWs (12).…”

Section: Resultsmentioning

confidence: 99%

“…Indeed, as in the case of III-V NW growth on Si substrates, the growth sequence for InAs NWs, particularly at the initial stage, is not directly appricable for InGaAs NWs (11). Control of alloy composition is also an important issue and is known to depend various parameters in the SA-MOVPE growth (12).…”

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confidence: 99%

Selective-Area Growth of Vertical InGaAs Nanowires on Ge for Transistor Applications

et al. 2016

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III-V compound semiconductors and Ge are promising future channel materials because of their high carrier mobility. For example the electron mobility of InAs is about 20 times faster than that of Si at room temperature and hole mobility of Ge is about 5 times faster than that of Si. In this paper, we report direct integration of InGaAs nanowires (NWs) on Ge(111) substrate by selective-area metal organic vapor phase epitaxy (SA-MOVPE) for realization of high carrier mobility InGaAs/Ge hybrid CMOS applications, and characterization of the composition and growth modes of InGaAs NWs by X-ray diffraction (XRD) measurement.

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“…As many research works [171][172][173] on Au-assisted nanowire growth proved, the nanowire growth rate first increases with growth temperature, as a consequence to the thermal activation of growth species and also the thermal decomposition of precursor in MOCVD. Then the growth rate will reach a maximum growth rate at certain growth temperature.…”

Section: Growth Temperaturementioning

confidence: 99%

Investigation of structural characteristics of III-V semiconductor nanowires grown by molecular beam epitaxy

Zhang¹

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One-dimensional nanowires made of III-V semiconductors have attracted significant research interest in the recent decades due to their distinct physical and chemical properties that can potentially lead to a wide range of applications in nanoelectronics and optoelectronics. As a key class of III-V semiconductor nanowires, InAs nanowires have attracted special attention due to their narrow bandgap, relatively high electron mobility, and small electron effective mass, which made them a promising candidate for the applications in future optical and highfrequency electronic devices.One of the challenges in realizing these unique III-V nanowire properties in nanowire-based devices is to integrate nanowires on the nano-devices or chips with well-organized arrangement. To solve this issue, the epitaxial nanowire growth provides the uniqueness that well aligned nanowires can be grown on the chosen substrates, and by selecting substrates with particular orientations, specifically orientated nanowires can be grown. Au-assisted nanowire growth is one of the most common methods to grow epitaxial III-V nanowires via the vapor-liquid-solid (VLS) mechanism or vapor-solid-solid (VSS) mechanism.For III-V nanowires, one of the coherent problems is that the stacking faults and/or twin defects can easily be introduced in both wurtzite or zinc-blende structured nanowires due to the small energy differences between wurtzite and zinc-blende stacking sequences of their dense planes. For III-V nanowires to be practically useful, it is of significant importance to minimize the lattice defects in nanowires, and to control their crystal phase and structural quality. In this regard, in this thesis, we investigated the growth parameters on the growth behaviour, crystal phase and structural quality of III-V nanowires, particularly InAs and GaAs nanowires. By carefully tuning the growth parameters, we have successfully achieved the controlled growth of InAs and GaAs nanowires with defect-free wurtzite structure and/or zincblende structure. I acknowledge that an electronic copy of my thesis must be lodged with the University Library and, subject to the policy and procedures of The University of Queensland, the thesis be made available for research and study in accordance with the Copyright Act 1968 unless a period of embargo has been approved by the Dean of the Graduate School.I acknowledge that copyright of all material contained in my thesis resides with the copyright holder(s) of that material. Where appropriate I have obtained copyright permission from the copyright holder to reproduce material in this thesis. In the meantime, I am very grateful for the staff of Centre for Microscopy and Microanalysis (CMM) at UQ, who helped me in so many ways. They are Richard IV Publications during candidature

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Influence of growth temperature on growth of InGaAs nanowires in selective-area metal–organic vapor-phase epitaxy

Cited by 25 publications

References 26 publications

Pitch-Independent Realization of 30-nm-Diameter InGaAs Nanowire Arrays by Two-Step Growth Method in Selective-Area Metalorganic Vapor-Phase Epitaxy

Pitch-Independent Realization of 30-nm-Diameter InGaAs Nanowire Arrays by Two-Step Growth Method in Selective-Area Metalorganic Vapor-Phase Epitaxy

Selective-Area Growth of Vertical InGaAs Nanowires on Ge for Transistor Applications

Investigation of structural characteristics of III-V semiconductor nanowires grown by molecular beam epitaxy

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