Influence of hydrogen plasma treatment on secondary phases in CZTS thin films for energy harvesting

Babichuk, I.S.; Semenenko, M.; Caballero, R.; Hladkovskyi, V.V.; Datsenko, Oleksandr I.; Yeshchenko, Oleg A.; Babichuk, I.V.; Lin, Chubin; Qiu, Yuhui; Redko, R.A.; Hreshchuk, Oleksandr; Yukhymchuk, V.О.; León, M.; Yang, Jian

doi:10.1016/j.mtcomm.2021.102664

Cited by 12 publications

(6 citation statements)

References 42 publications

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“… − The compositional dependencies versus x for various phonon vibration modes of CZTSSe bulks and films are illustrated in Figure c,d; their corresponding shifts in the bands positions versus x have been given in Tables S2 and S3. Notably, all the Raman spectra do not demonstrate peaks of secondary phases, in which positions are indicated by the vertical lines in the lower plot in Figure a. ,− …”

Section: Results and Discussionmentioning

confidence: 93%

Spectroscopy and Theoretical Modeling of Phonon Vibration Modes and Band Gap Energy of Cu₂ZnSn(S_xSe_1–x)₄Bulk Crystals and Thin Films

et al. 2021

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Semiconductor Cu2ZnSn(S x Se1–x )4 (CZTSSe) solid solution is considered as a perspective absorber material for solar cells. However, during its synthesis or deposition, any modification in the resulting optical properties is hardly predicted. In this study, experimental and theoretical analyses of CZTSSe bulk crystals and thin films are presented based on Raman scattering and absorption spectroscopies together with compositional and morphological characterizations. CZTSSe bulk and thin films are studied upon a change in the x = S/(S + Se) aspect ratio. The morphological study is focused on surface visualization of the solid solutions, depending on x variation. It has been discovered for the first time that the surface of the bulk CZTSSe crystal with x = 0.35 has pyramid-like structures. The information obtained from the elemental analysis helps to consider the formation of a set of possible intrinsic lattice defects, including vacancies, self-interstitials, antisites, and defect complexes. Due to these results and the experimentally obtained values of the band gap within 1.0–1.37 eV, a deviation from the calculated band gap values is estimated in the range of 1.0–1.5 eV. It is suggested which defects can have an influence on such a band gap change. Also, on comparing the experimental Raman spectra of CZTSSe with the theoretical modeling results, an excellent agreement is obtained for the main Raman bands. The proposed theoretical approach allows to estimate the values of concentration of atoms (S or Se) for CZTSSe solid solution directly from the experimental Raman spectra. Thus, the visualization of morphology and the proposed theoretical approach at various x values will help for a deeper understanding of the CZTSSe structure to develop next-generation solar cells.

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Section: Results and Discussionmentioning

confidence: 93%

Spectroscopy and Theoretical Modeling of Phonon Vibration Modes and Band Gap Energy of Cu₂ZnSn(S_xSe_1–x)₄Bulk Crystals and Thin Films

et al. 2021

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“…SEM and EDS measurements were carried out at 15 kV operating voltage. [94,95] To obtain the thickness of MoS 2 films and flakes with AFM, a Dimension 3100 by Bruker was used. [96] A NOVA2S spectrometer and Gora-light system (ideaoptics, Shanghai, China /ideaoptics.com/) were employed for Raman spectroscopy and mapping in the backscattering configuration with 532 nm excitation by Nd:YAG diode-pumped solid-state (DPSS) laser.…”

Section: Methodsmentioning

confidence: 99%

Improving the Strain Control Performance of MoS₂ Monolayer to Develop Flexible Electronics

Chen,

Qiu,

Babichuk

et al. 2023

Adv Eng Mater

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In recent years, two‐dimensional (2D) materials with unique mechanical, optical, and electrical properties have attracted extensive attention. In terms of mechanical properties, 2D molybdenum disulfide (MoS2) can perform larger strains than traditional semiconductor materials. In this contribution, we used the chemical vapor deposition (CVD) technique to grow MoS2 films on a Si wafer and transfer them onto a flexible substrate. The controlled deformation of 2D MoS2 samples was realized by encapsulating them with a flexible acrylate film via successive spin‐coating and photopolymerization. Improved strain control was achieved due to the perfect integration of different components (MoS2/substrate) and the high adhesion of polymers. This approach provided a better detection of the changing structure of the MoS2 monolayer on the flexible substrate during tensile. It is noted that the crystal symmetry damage caused by strain is reflected in the redshift of the characteristic bands of MoS2. Hence, we provided an effective way for strain regulation of MoS2 for future applications in flexible devices.This article is protected by copyright. All rights reserved.

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“…Oxygen can be used in processes requiring an oxidizing environment [42,43]. Hydrogen is often used in arc plasmotrons because of its ability to produce highly reactive plasma [44,45]. It is used in processes such as plasma cleaning, surface activation and chemical vapor deposition.…”

Section: Introductionmentioning

confidence: 99%

Effect of Plasma Gas Type on the Operation Characteristics of a Three-Phase Plasma Reactor with Gliding Arc Discharge

Stryczewska,

Komarzyniec,

Boiko

2024

Energies

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Three-phase gliding arc discharge reactors are devices in which it is difficult to maintain stable plasma parameters, be it electrically, physically, or chemically. The main cause of plasma instability is the source, which is freely burning arcs in a three-phase system. In addition, these arcs burn at low currents and are intensively cooled, further increasing their instability. These instabilities translate into the electrical characteristics of the plasma reactor. The analysis for the four gases nitrogen, argon, helium, and air shows that the type of plasma-generating gas and its physical parameters have a strong influence on the operational characteristics of the plasma reactor. Current–voltage, power and frequency characteristics of the plasma reactor were plotted experimentally. Characteristics obtained in this way make it possible to determine the areas of effective operation of the plasma reactor, and to estimate the quality of the generated plasma. Based on the characteristics obtained, a method of controlling the plasma parameters can be developed.

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Influence of hydrogen plasma treatment on secondary phases in CZTS thin films for energy harvesting

Cited by 12 publications

References 42 publications

Spectroscopy and Theoretical Modeling of Phonon Vibration Modes and Band Gap Energy of Cu₂ZnSn(S_xSe_1–x)₄Bulk Crystals and Thin Films

Spectroscopy and Theoretical Modeling of Phonon Vibration Modes and Band Gap Energy of Cu₂ZnSn(S_xSe_1–x)₄Bulk Crystals and Thin Films

Improving the Strain Control Performance of MoS₂ Monolayer to Develop Flexible Electronics

Effect of Plasma Gas Type on the Operation Characteristics of a Three-Phase Plasma Reactor with Gliding Arc Discharge

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Influence of hydrogen plasma treatment on secondary phases in CZTS thin films for energy harvesting

Cited by 12 publications

References 42 publications

Spectroscopy and Theoretical Modeling of Phonon Vibration Modes and Band Gap Energy of Cu2ZnSn(SxSe1–x)4Bulk Crystals and Thin Films

Spectroscopy and Theoretical Modeling of Phonon Vibration Modes and Band Gap Energy of Cu2ZnSn(SxSe1–x)4Bulk Crystals and Thin Films

Improving the Strain Control Performance of MoS2 Monolayer to Develop Flexible Electronics

Effect of Plasma Gas Type on the Operation Characteristics of a Three-Phase Plasma Reactor with Gliding Arc Discharge

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Product

Resources

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Spectroscopy and Theoretical Modeling of Phonon Vibration Modes and Band Gap Energy of Cu₂ZnSn(S_xSe_1–x)₄Bulk Crystals and Thin Films

Spectroscopy and Theoretical Modeling of Phonon Vibration Modes and Band Gap Energy of Cu₂ZnSn(S_xSe_1–x)₄Bulk Crystals and Thin Films

Improving the Strain Control Performance of MoS₂ Monolayer to Develop Flexible Electronics