Influence of hydrostatic pressure and concentration of Ge on the topological band order of SnSi1-Ge  alloys

Yalameha, Shahram; Nourbakhsh, Zahra

doi:10.1016/j.mseb.2022.115742

Cited by 2 publications

(4 citation statements)

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“…In this family it is possible that Ag 2 Se 1−x S x compounds could be interesting to be studied for a possible TQPT since the band gap of Ag 2 Se has been found to increase with pressure as it occurs in TIs after the TQPT [103]. Finally, we want to comment that recent theoretical calculations have studied the concentration and pressure effects on the topological phases of SnSi 1−x Ge x compounds [106]. Since these alloys are dynamically stable, it is expected that these alloys can be experimentally synthesized and studied with much interest due to their compatibility with silicon technology.…”

Section: Other Compoundsmentioning

confidence: 97%

“…103 Finally, we want to comment that recent theoretical calculations have studied the concentration and pressure effects on the topological phases of SnSi 1-x Ge x compounds. 106 Since these alloys are dynamically stable, it is expected that these alloys can be experimentally synthesized and studied with much interest due to their compatibility with silicon technology.…”

Section: Other Compoundsmentioning

confidence: 99%

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Pressure induced topological and topological crystalline insulators

Rajaji

Manjón

Narayana

2022

J. Phys.: Condens. Matter

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Research on topological and topological crystalline insulators is one of the most intense and exciting topics due to its fascinating fundamental science and potential technological applications. Pressure (strain) is one potential pathway to induce the non-trivial topological phases in some topologically trivial (normal) insulating or semiconducting materials. In the last ten years, there have been substantial theoretical and experimental efforts from condensed-matter scientists to characterize and understand pressure-induced topological quantum phase transitions. In particular, a promising enhancement of the thermoelectric performance through pressure-induced topological quantum phase transition has been recently realized; thus evidencing the importance of this subject in society. Since the pressure effect can be mimicked by chemical doping or substitution in many cases, these results have opened a new route to develop more efficient materials for harvesting green energy at ambient conditions. Therefore, a detailed understanding of the mechanism of pressure-induced topological quantum phase transitions in various classes of materials with spin-orbit interaction is crucial to improve their properties for technological implementations. Hence, this review focuses on the emerging area of pressure-induced topological quantum phase transitions to provide a comprehensive understanding of this subject from both theoretical and experimental points of view. In particular, it covers the Raman signatures of detecting the topological transitions (under pressure), some of the important pressure-induced topological and topological crystalline insulators of the various classes of spin-orbit coupling materials, and provide future research directions in this interesting field.

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Section: Other Compoundsmentioning

confidence: 97%

Section: Other Compoundsmentioning

confidence: 99%

Pressure induced topological and topological crystalline insulators

Rajaji

Manjón

Narayana

2022

J. Phys.: Condens. Matter

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“…This makes TI ideal for applications in electronics, thermoelectrics, optoelectronics, superconductors, and magnetics [47,48,49,50]. It has been found that it is possible to control topological band order using electromagnetic fields, alloying, pressure, strain, and temperature effects [19,20,[51][52][53]. Here, the mechanism of hydrostatic strain is employed in this study in order to investigate the TPT of the NaLi 2 Bi compound.…”

Section: Topological Propertiesmentioning

confidence: 99%

“…As per the normal band filling order near Fermi energy, the valence band consists of Bi-p orbitals, while the conduction band is composed of s-type orbitals (see green rectangle), which, due to the formation of chemical bonds in this compound, hybridize and split into bonding and antibonding states in the absence of SOC (i.e. p + (s + ) and p − (s − ) with different parities) [19,58]. The system is therefore a conventional semiconductor with trivial bandgap as shown in figure 7(b) in both PBE-GGA and TB-mBJ approaches.…”

Section: Topological Propertiesmentioning

confidence: 99%

Effect of hydrostatic strain on the mechanical properties and topological phase transition of bi-alkali pnictogen NaLi₂Bi

Hosseini

Yalameha

2023

Phys. Scr.

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The bi-alkali pnictogens have attracted significant attention for optoelectronic and photocathodic device applications. However, in most of the compounds belonging to this family, there has been less effort put into investigating the mechanical properties and topological phase transitions (TPT) of the compounds. Here, in the framework of density functional theory, the mechanical properties and topological phase transition of NaLi2Bi under hydrostatic pressures are investigated. Elastic constants and phonon calculations have shown the mechanical and dynamical stability of this compound under hydrostatic tension and compression. The analysis of the elastic constants show that the NaLi2Bi in the equilibrium state is an auxetic material with a negative Poisson’s ratio of -0.285, which changes to a material with a positive Poisson’s ratio under hydrostatic tension. Meanwhile, Poisson’s ratio and Pugh ratio indicate that this compound has brittle behavior and maintains it under hydrostatic pressures. The calculated results of the band structure within the generalized gradient approximation (GGA) (Tran-Blaha modified Becke-Johnson exchange potential approximation (TB-mBJ)) show that NaLi2Bi is a nontrivial topological material (trivial topological material). It was found that hydrostatic compression (tension) in the GGA (TB-mBJ) approach leads to a transition from a nontrivial (trivial) to a trivial (nontrivial) topological phase for this compound. Moreover, the calculated Wannier charge centers confirm the TPT. Identifying the mechanisms controlling the auxetic behavior and TPT of this compound offers a valuable feature for designing and developing high-performance nanoscale electromechanical and spintronic devices.

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Influence of hydrostatic pressure and concentration of Ge on the topological band order of SnSi1-Ge alloys

Cited by 2 publications

References 57 publications

Pressure induced topological and topological crystalline insulators

Pressure induced topological and topological crystalline insulators

Effect of hydrostatic strain on the mechanical properties and topological phase transition of bi-alkali pnictogen NaLi₂Bi

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Influence of hydrostatic pressure and concentration of Ge on the topological band order of SnSi1-Ge alloys

Cited by 2 publications

References 57 publications

Pressure induced topological and topological crystalline insulators

Pressure induced topological and topological crystalline insulators

Effect of hydrostatic strain on the mechanical properties and topological phase transition of bi-alkali pnictogen NaLi2Bi

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Product

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Effect of hydrostatic strain on the mechanical properties and topological phase transition of bi-alkali pnictogen NaLi₂Bi